A vibrator device includes a semiconductor substrate, a vibrator element, a circuit element, a wiring, a processing circuit, and a through electrode. The semiconductor substrate has a first surface and an opposite-side second surface of the semiconductor substrate from the first surface. The vibrator element is provided at the first surface. The circuit element is provided at the first surface and includes an oscillation circuit. The wiring is provided at the first surface and electrically couples the vibrator element and the oscillation circuit. The processing circuit is provided at the second surface and processes an output signal of the oscillation circuit. The through electrode penetrates the semiconductor substrate and electrically couples the oscillation circuit and the processing circuit.

A vibrator device includes a semiconductor substrate, a vibrator element, a circuit element, a wiring, a processing circuit, and a through electrode. The semiconductor substrate has a first surface and an opposite-side second surface of the semiconductor substrate from the first surface. The vibrator element is provided at the first surface. The circuit element is provided at the first surface and includes an oscillation circuit. The wiring is provided at the first surface and electrically couples the vibrator element and the oscillation circuit. The processing circuit is provided at the second surface and processes an output signal of the oscillation circuit. The through electrode penetrates the semiconductor substrate and electrically couples the oscillation circuit and the processing circuit.

A vibration-absorbing structure for packaging a crystal resonator includes a package base, a resonant crystal blank, and a top cover. The top of the package base has a recess. The sidewall of the package base surrounds the recess. The resonant crystal blank has a border area, at least one serpentine connection area, and a resonant area. The serpentine connection area is connected between the border area and the edge of the resonant area. The border area is arranged on the sidewall. The top cover, arranged on the border area, covers the recess, the at least one serpentine connection area, and the resonant area.

A vibration-absorbing structure for packaging a crystal resonator includes a package base, a resonant crystal blank, and a top cover. The top of the package base has a recess. The sidewall of the package base surrounds the recess. The resonant crystal blank has a border area, at least one serpentine connection area, and a resonant area. The serpentine connection area is connected between the border area and the edge of the resonant area. The border area is arranged on the sidewall. The top cover, arranged on the border area, covers the recess, the at least one serpentine connection area, and the resonant area.

An elastic wave apparatus includes a piezoelectric substrate, an IDT electrode on the piezoelectric substrate and includes first electrode fingers, second electrode fingers, a first busbar, and a second busbar, a capacitive electrode including third electrode fingers, fourth electrode fingers, a third busbar, and a fourth busbar, an insulating film laminated on the capacitive electrode, a first wiring line including a first portion facing the capacitive electrode via the insulating film, and a second wiring line that connects the first busbar and the third busbar. The capacitive electrode extends in a lateral direction with respect to the IDT electrode in a surface acoustic wave propagation direction.

An elastic wave apparatus includes a piezoelectric substrate, an IDT electrode on the piezoelectric substrate and includes first electrode fingers, second electrode fingers, a first busbar, and a second busbar, a capacitive electrode including third electrode fingers, fourth electrode fingers, a third busbar, and a fourth busbar, an insulating film laminated on the capacitive electrode, a first wiring line including a first portion facing the capacitive electrode via the insulating film, and a second wiring line that connects the first busbar and the third busbar. The capacitive electrode extends in a lateral direction with respect to the IDT electrode in a surface acoustic wave propagation direction.

A clock oscillator, a clock oscillator production method and use method, and a chip including the clock oscillator are provided. The clock oscillator includes a resonator, a shock-absorbing material layer, and a base, and at least a part of the shock-absorbing material layer is located between the resonator and the base. In the clock oscillator, the shock-absorbing material layer is added between the resonator and the base, and the shock-absorbing material layer can effectively prevent a mechanical wave from being conducted between the base and the resonator, so that the resonator is protected from external vibration. This can ensure, when there is external vibration, that an output frequency of the resonator is not deteriorated and improve shock absorption performance of the clock oscillator.

A resonator device includes: a base; a resonator element that includes a resonator substrate and an electrode; a conductive layer that is disposed on the base; a metal bump that is disposed between the conductive layer and the resonator element, and that electrically couples the conductive layer and the electrode while bonding the conductive layer and the resonator element; and at least one of a first low elastic modulus layer that is interposed between the base and the conductive layer, that overlaps the metal bump in a plan view of the base, and that has an elastic modulus smaller than that of the metal bump, and a second low elastic modulus layer that is interposed between the resonator substrate and the electrode, that overlaps the metal bump in the plan view of the base, and that has an elastic modulus smaller than that of the metal bump.

A resonator device includes: a base; a resonator element that includes a resonator substrate and an electrode; a conductive layer that is disposed on the base; a metal bump that is disposed between the conductive layer and the resonator element, and that electrically couples the conductive layer and the electrode while bonding the conductive layer and the resonator element; and at least one of a first low elastic modulus layer that is interposed between the base and the conductive layer, that overlaps the metal bump in a plan view of the base, and that has an elastic modulus smaller than that of the metal bump, and a second low elastic modulus layer that is interposed between the resonator substrate and the electrode, that overlaps the metal bump in the plan view of the base, and that has an elastic modulus smaller than that of the metal bump.

The present disclosure provides a differential resonator and a MEMS sensor. The differential resonator includes a substrate, a first resonator, a second resonator and a coupling mechanism. The first resonator is connected with the second resonator, and the first resonator and the second resonator are movably connected with the substrate. The coupling mechanism includes a first guide beam, a second guide beam, a first coupling beam, a second coupling beam, a first connecting piece and a second connecting piece. The first guide beam and the second guide beam are arranged on two opposite sides of a direction perpendicular to a vibration direction of the first resonator or the second resonator. The first coupling beam is connected with the first guide beam, the second guide beam and the first resonator. The second coupling beam is connected with the first guide beam, the second guide beam and the second resonator.