A bulk acoustic wave filter, a manufacturing method thereof, and a communication device are disclosed. The bulk acoustic wave filter includes a first filter substrate and a second filter substrate; the first filter substrate includes a first base substrate and a first resonator, a first electrode pad and a first auxiliary pad arranged on the first base substrate; the second filter substrate includes a second base substrate and a second resonator, a second electrode pad and a second auxiliary pad arranged on the second base substrate, the first filter substrate is arranged opposite to the second filter substrate, the first electrode pad and the second auxiliary pad are in contact with each other, and the second electrode pad and the first auxiliary pad are in contact with each other.

An electronic component includes a mounting substrate, and first and second devices each including a functional element. The first device is spaced apart from and faces the mounting substrate. The second device is located on the mounting substrate and faces the first device. A functional element of the first device is located on a first surface facing the second device, in the first device. A functional element of the second device is located on a second surface facing the first device, in the second device.

Methods of fabricating resonator and filter devices. A first conductor pattern formed on a front surface of a piezoelectric plate includes a first plurality of contact pads and an interdigital transducer (IDT). The IDT and the piezoelectric plate are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the piezoelectric plate. An acoustic Bragg reflector is between a substrate and a back surface of the piezoelectric plate, the acoustic Bragg reflector configured to reflect the shear primary acoustic mode. A second conductor pattern including a second plurality of contact pads is formed on a back surface of the interposer. The first plurality of contact pads is directly connected to respective contact pads of the second plurality of contact pads. A perimeter of the acoustic resonator chip is sealed to a perimeter of the interposer.

A bulk acoustic wave filter, a manufacturing method thereof, and a communication device are disclosed. The bulk acoustic wave filter includes a first filter substrate and a second filter substrate; the first filter substrate includes a first base substrate and a first resonator, a first electrode pad and a first auxiliary pad arranged on the first base substrate; the second filter substrate includes a second base substrate and a second resonator, a second electrode pad and a second auxiliary pad arranged on the second base substrate, the first filter substrate is arranged opposite to the second filter substrate, the first electrode pad and the second auxiliary pad are in contact with each other, and the second electrode pad and the first auxiliary pad are in contact with each other.

A Fin Bulk Acoustic Resonator (FinBAR) includes a fin integrally fabricated on a substrate of a glass or a semiconductor, an inner electrode deposited on the fin, a piezoelectric layer disposed on the inner electrode, an outer electrode deposited on the piezoelectric layer, a first electrode and a second electrode formed on the top surface of the substrate and connected to the inner and outer electrodes respectfully. The fin is characterized with a larger height than its width. A FinBAR array including a number of the FinBARs with different fin widths sequentially located on one chip is capable of continuously filtering frequencies in UHF and SHF bands.

A bulk-acoustic resonator module includes: a module substrate; a bulk-acoustic resonator connected to the module substrate by a connection terminal and disposed spaced apart from the module substrate; and a sealing portion sealing the bulk-acoustic resonator. The bulk-acoustic resonator includes a resonating portion disposed opposite to an upper surface of the module substrate. A space is disposed between the resonating portion and the upper surface of the module substrate.

A bulk acoustic wave resonator having a central region, an outer region, and a raised frame region between the central region and the outer region is disclosed. The bulk acoustic wave resonator can include a piezoelectric layer and a top electrode over the piezoelectric layer. The top electrode is disposed at least in the central region, the outer region, and the raised frame region, the top electrode including a first layer and a second layer. A material of the first layer is different from the material of the second layer.

An RF filter comprising a resonator element and a polymer composition is provided. The polymer composition contains an aromatic polymer and has a melting temperature of about 240° C. or more. The polymer composition exhibits a dielectric constant of about 5 or less and dissipation factor of about 0.05 or less at a frequency of 10 GHz.

A bulk acoustic wave (BAW) structure includes a single crystal piezoelectric material layer, a first electrode, a second electrode and an acoustic reflector. The first and second electrodes are respectively located on a first surface and a second surface of the single crystal piezoelectric material layer. The area of the second electrode is greater than or equal to that of the second surface of the single crystal piezoelectric material layer, and the contact area of the single crystal piezoelectric material layer with the second electrode is equal to the area of the second surface of the single crystal piezoelectric material layer. The acoustic reflector is disposed on a surface of the first electrode.

The invention provides a filter device, an RF front-end device and a wireless communication device. The filter device comprises a substrate, at least one resonance device, a passive device and a connector, wherein the at least one resonance device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the passive device is located on the second side. The at least one resonance device is connected to the passive device through the connector. The RF filter device formed by integrating the resonance device (such as an SAW resonance device or a BAW resonance device) and the passive device (such as an IPD) in one die can broaden the passband width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.