A packaged acoustic wave component has two acoustic wave devices interconnected by a thermally conductive frame, at least one of the acoustic wave devices including a multi-layer piezoelectric substrate. The multi-layer piezoelectric substrate includes a support layer and a piezoelectric layer disposed over the support layer. An interdigital transducer (IDT) electrode is disposed over the piezoelectric layer. The support layer has a high thermal conductivity, allowing heat generated by a first acoustic wave device with the multi-layer piezoelectric substrate to be transferred to a second acoustic wave device on which it is stacked to dissipate heat from the first acoustic wave device by way of the thermally conductive frame spaced from ends of the piezoelectric layers.

A high-frequency module includes a module substrate including an internal wiring pattern, and a SAW filter including a piezoelectric substrate, an electrode pattern on the piezoelectric substrate, a support surrounding the electrode pattern, and a cover on the support covering the electrode pattern to define a hollow space together with the support and the piezoelectric substrate. The module substrate, the cover, and the piezoelectric substrate are disposed in this order in a perpendicular or substantially perpendicular direction with respect to the module substrate, and a shield electrode is provided on a surface of the cover that faces the module substrate or on a surface of the cover that faces the piezoelectric substrate.

An acoustic wave device is disclosed. The acoustic wave device is configured to generate a surface acoustic wave having a wavelength L. The acoustic wave device can include a piezoelectric layer. The piezoelectric layer has a thickness in a range of 0.1 L to 0.3 L. The acoustic wave device can include an interdigital transducer electrode that is positioned over the piezoelectric layer, and a support substrate that is bonded to the piezoelectric layer such that the piezoelectric layer is positioned between the interdigital transducer electrode and the support substrate. The support substrate has a cut angle configured to provide a velocity of the surface acoustic wave calculated by multiplying the wavelength L by a particular frequency to be greater than 4800 m/s.

In an electronic component, a chip includes a vibrating functional part and a terminal on a first surface thereof. An intermediate member is stacked on the first surface. The intermediate member includes a first through hole above the functional part and surrounds the functional part in plan view. A lid is stacked on a surface of the intermediate member on the opposite side from the chip and closes the first through hole. A bonding member includes an upper end located on the opposite side of the lid from the intermediate member. The intermediate member surrounds the terminal as well as the functional part. The lid includes a second through hole overlapping the terminal out of the functional part and the terminal. The bonding member includes a center portion located inside the second through hole and a lower end located inside the first through hole and bonded to the terminal.

A combined acoustic wave device package is provided comprising: a first substrate having a bulk acoustic wave (BAW) resonator formed thereon; a second substrate having a surface acoustic wave (SAW) resonator formed thereon; and at least one bonding element connecting the first substrate and second substrate. A method for forming such a combined acoustic wave device package is also provided. A radio frequency (RF) device comprising such a combined acoustic wave device package, and a wireless device comprising an antenna and a such a combined acoustic wave device package are also provided.

An RF filter comprising a resonator element and a polymer composition is provided. The polymer composition contains an aromatic polymer and has a melting temperature of about 240° C. or more. The polymer composition exhibits a dielectric constant of about 5 or less and dissipation factor of about 0.05 or less at a frequency of 10 GHz.

The invention provides a filter device, an RF front-end device and a wireless communication device. The filter device comprises a substrate, at least one resonance device, a passive device and a connector, wherein the at least one resonance device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the passive device is located on the second side. The at least one resonance device is connected to the passive device through the connector. The RF filter device formed by integrating the resonance device (such as an SAW resonance device or a BAW resonance device) and the passive device (such as an IPD) in one die can broaden the passband width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.

This hermetic sealing lid member (1) is made of a clad material (10) including a base material layer (11) made of an Fe alloy that contains 4 mass % or more of Cr and a silver brazing layer (13) bonded onto a surface of the base material layer on a side closer to an electronic component housing member through an intermediate layer (12).

An SAW device 1 includes a piezoelectric substrate 13, an IDT electrode 5 on a first major surface 3a of the piezoelectric substrate 13, a capacitance element 31 which is located on the first major surface 3a and is connected to the IDT electrode 5, and a cover 9 which is superimposed only on the capacitance element 31 between the IDT electrode 5 and the capacitance element 31.

According to various aspects and embodiments, a system and method for packaging an electronic device is disclosed. One example of the method comprises depositing a layer of temporary bonding material onto a surface of a first substrate, depositing a layer of structure material onto a surface of the layer of temporary bonding material, masking at least a portion of the structure material to define an unmasked portion and a masked portion of the structure material, exposing the unmasked portion of the structure material to a source of light, removing the masked portion of the structure material, bonding at least a portion of a surface of a second substrate to the unmasked portion of the structure material, and removing the first substrate from the unmasked portion of the structure material.