A packaged acoustic wave component is disclosed. The packaged acoustic wave component can include a first acoustic wave resonator that includes a first interdigital transducer electrode that is positioned over a first piezoelectric layer. The packaged acoustic wave component can also include a second acoustic wave resonator including a second interdigital transducer electrode positioned over a second piezoelectric layer. The second piezoelectric layer is bonded to the first piezoelectric layer. The packaged acoustic wave component can further include a stopper structure that is positioned over the first piezoelectric layer. The first stopper structure is positioned above a via and extends through the first piezoelectric layer. The stopper structure is in electrical communication with the first interdigital transducer electrode and includes a material which reflects at least fifty percent of light having a wavelength of 355 nanometers.

A surface acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode on the substrate, a cover over the substrate and IDT electrode, and hollow spaces between the IDT electrode and the cover. The hollow spaces are defined by partition supports between the substrate and the cover. The partition supports include a first and second partition supports extending in a first direction without contacting each other. The first and second partition supports each include first and second ends along the first direction. The first and second direction perpendicular to the first direction. The first end of the first partition support is closer to an outer periphery of the substrate than is the second end, and the first end of the second partition support is farther away from the outer periphery than is the second end.

Embodiments of the invention relate to a surface acoustic wave device including a piezoelectric substrate, an interdigital transducer electrode on the piezoelectric substrate and a first thermally conductive layer arranged over the piezoelectric substrate and interdigital transducer electrode. The first thermally conductive layer is spaced apart from the piezoelectric substrate and interdigital transducer electrode. The surface acoustic wave device also includes a second thermally conductive layer configured to dissipate heat generated by the surface acoustic wave device. The second thermally conductive layer is arranged on an opposing side of the piezoelectric substrate to the interdigital transducer electrode. Related wafer-level packages, radio frequency modules and wireless communication devices are also provided.

An acoustic wave device includes: a wiring substrate; a device chip mounted on the wiring substrate; a photocurable resin film disposed so as to surround an air gap between the wiring substrate and the device chip; a ceramics layer formed so as to cover the photocurable resin film; and a sealing portion covering the ceramics layer.

An elastic wave device includes a supporting substrate including an upper surface including a recessed portion, a piezoelectric thin film on the supporting substrate to cover the recessed portion of the supporting substrate, an IDT electrode on a main surface of the piezoelectric thin film, the main surface being adjacent to the supporting substrate, and an intermediate layer on a main surface of the piezoelectric thin film, the main surface being remote from the supporting substrate. A space is defined by the supporting substrate and the piezoelectric thin film. The IDT electrode faces the space. Through holes are provided in the piezoelectric thin film and the intermediate layer to extend from a main surface of the intermediate layer to the space, the main surface being remote from the piezoelectric thin film. The elastic wave device further includes a cover member on the intermediate layer and covering opening ends of the through holes.

An electronic device comprises a first substrate having a first surface bonded to a first surface of a second substrate, one or more acoustic wave devices disposed on the first surface of each of the first substrate and the second substrate, and a thermally conductive layer disposed on a second surface of the first substrate opposite the first surface of the first substrate. The thermally conductive layer has a higher thermal conductivity than a material of which the first substrate is formed to reduce an operating temperature of the first substrate.

A surface acoustic wave device includes a piezoelectric substrate, an interdigital transducer electrode that is disposed on a main surface of the piezoelectric substrate, a plurality of partition-support layers each of which is arranged in a region of the main surface surrounded by an outer periphery of the main surface, and a cover layer that is disposed above the plurality of partition-support layers and that covers the interdigital transducer electrode. The plurality of partition-support layers include a first partition-support layer and a second partition-support layer that are adjacent to each other, and a portion of the first partition-support layer and a portion of the second partition-support layer do not overlap each other when viewed from a second direction perpendicular or substantially perpendicular to a first direction in which the plurality of partition-support layers extend.

A high frequency module includes a mounting substrate, an acoustic wave filter, a protection member, a resin layer, and a shield layer. The acoustic wave filter is mounted on a first main surface of the mounting substrate. The protection member is disposed on a main surface of the acoustic wave filter that is far from the mounting substrate. The resin layer is disposed on the first main surface of the mounting substrate and covers an outer peripheral surface of the acoustic wave filter and an outer peripheral surface of the protection member. The shield layer covers the resin layer and the protection member. The protection member is in contact with both the acoustic wave filter and the shield layer. The acoustic wave filter includes a piezoelectric substrate. A main surface of the piezoelectric substrate that is far from the mounting substrate is in contact with the protection member.

An acoustic wave filter includes a substrate and a piezoelectric layer over the substrate. First acoustic wave resonators are disposed over the piezoelectric layer and arranged in series along a first branch, and second acoustic wave resonators are disposed over the piezoelectric layer, arranged in parallel, and connected to the first branch and to ground. The first and second acoustic wave resonators include an interdigital transducer electrode interposed between a pair of reflectors. A layer of negative temperature coefficient of frequency dielectric material is disposed over one or more of the second plurality of acoustic wave resonators to control the temperature coefficient of frequency and improve temperature stability of the acoustic wave filter.

Embodiments of the present application provide a wafer level surface acoustic wave filter and a package method, the surface acoustic wave filter includes a wafer, an electrode layer, a supporting wall and a cover plate; wherein, the wafer includes a substrate layer and a piezoelectric thin film layer combined together by wafer bonding, the electrode layer is arranged on a surface of the piezoelectric thin film layer, the supporting wall surrounds between the piezoelectric thin film layer and the cover plate to form a sealed cavity; and the cover plate includes at least a first material layer, which uses the same material as the substrate layer.