Techniques for improving Bulk Acoustic Wave (BAW) reflector and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A Bulk Acoustic Wave (BAW) resonator of this disclosure may comprise a substrate and an active piezoelectric resonant volume. The active piezoelectric resonant volume of the Bulk Acoustic Wave (BAW) resonator may have a main resonant frequency. The active piezoelectric resonant volume of the Bulk Acoustic Wave (BAW) resonator may comprise first and second piezoelectric layers having respective piezoelectric axis that substantially oppose one another. A first patterned layer may be disposed within the active piezoelectric volume. This may, but need not facilitate suppression of spurious modes. The main resonant frequency of the Bulk Acoustic Wave (BAW) resonator may be in a super high frequency (SHF) band. The main resonant frequency of the Bulk Acoustic Wave (BAW) resonator may be in an extremely high frequency (EHF) band.

Techniques for improving Bulk Acoustic Wave (BAW) reflector and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A Bulk Acoustic Wave (BAW) resonator of this disclosure may comprise a substrate and an active piezoelectric resonant volume. The active piezoelectric resonant volume of the Bulk Acoustic Wave (BAW) resonator may have a main resonant frequency. The active piezoelectric resonant volume of the Bulk Acoustic Wave (BAW) resonator may comprise first and second piezoelectric layers having respective piezoelectric axis that substantially oppose one another. A first patterned layer may be disposed within the active piezoelectric volume. This may, but need not facilitate suppression of spurious modes. The main resonant frequency of the Bulk Acoustic Wave (BAW) resonator may be in a super high frequency (SHF) band. The main resonant frequency of the Bulk Acoustic Wave (BAW) resonator may be in an extremely high frequency (EHF) band.

Piezoelectric acoustic metamaterial resonators include a piezoelectric substrate having a top surface and a bottom surface and a plurality of magnetostrictive members disposed on the top surface of the piezoelectric substrate and extending along a length of the piezoelectric substrate and spaced across a width of the piezoelectric substrate.

Piezoelectric acoustic metamaterial resonators include a piezoelectric substrate having a top surface and a bottom surface and a plurality of magnetostrictive members disposed on the top surface of the piezoelectric substrate and extending along a length of the piezoelectric substrate and spaced across a width of the piezoelectric substrate.

Two or more ME resonators are connected in series and in parallel generating a high sensitive, energy efficient and broadband miniature antenna and other conductor devices.

Two or more ME resonators are connected in series and in parallel generating a high sensitive, energy efficient and broadband miniature antenna and other conductor devices.

A solidly mounted resonator (SMR)-based magnetoelectric (ME) antenna comprises a substrate, a Bragg reflector disposed on the substrate, a magnetostrictive/piezoelectric ME composite element disposed on the Bragg reflector, a first electrically conductive contact and a second electrically conductive contact. The first contact is disposed between the Bragg reflector and the magnetostrictive/piezoelectric ME composite element and electrically coupled to a bottom surface of the magnetostrictive/piezoelectric ME composite element. The second contact is disposed on top of the magnetostrictive/piezoelectric ME composite element and electrically coupled to the top of the magnetostrictive/piezoelectric ME composite element. The magnetostrictive/piezoelectric ME composite element comprises a magnetorestrictive multilayer deposited on a piezoelectric layer. The magnetorestrictive multilayer produces an in-plane uniaxial magnetic anisotropy (UMA). The UMA is a twofold UMA that exhibits a symmetric radiation pattern.

A solidly mounted resonator (SMR)-based magnetoelectric (ME) antenna comprises a substrate, a Bragg reflector disposed on the substrate, a magnetostrictive/piezoelectric ME composite element disposed on the Bragg reflector, a first electrically conductive contact and a second electrically conductive contact. The first contact is disposed between the Bragg reflector and the magnetostrictive/piezoelectric ME composite element and electrically coupled to a bottom surface of the magnetostrictive/piezoelectric ME composite element. The second contact is disposed on top of the magnetostrictive/piezoelectric ME composite element and electrically coupled to the top of the magnetostrictive/piezoelectric ME composite element. The magnetostrictive/piezoelectric ME composite element comprises a magnetorestrictive multilayer deposited on a piezoelectric layer. The magnetorestrictive multilayer produces an in-plane uniaxial magnetic anisotropy (UMA). The UMA is a twofold UMA that exhibits a symmetric radiation pattern.

An acoustic wave device includes first and second piezoelectric layers including lithium niobate or lithium tantalate, a pair of first and second electrodes on a first principal surface of the first piezoelectric layer, and a pair of third and fourth electrodes on a first principal surface of the second piezoelectric layer, wherein the first piezoelectric layer and the first and second electrodes define a first acoustic wave resonator, the second piezoelectric layer and the third and fourth electrodes define a second acoustic wave resonator, and an angle between a crystal orientation of the first piezoelectric layer and a direction perpendicular or substantially perpendicular to a lengthwise direction of the pair of the first and second electrodes is different from an angle between a crystal orientation of the second piezoelectric layer and a direction perpendicular or substantially perpendicular to a lengthwise direction of the pair of the third and fourth electrodes.

An acoustic wave device includes first and second piezoelectric layers including lithium niobate or lithium tantalate, a pair of first and second electrodes on a first principal surface of the first piezoelectric layer, and a pair of third and fourth electrodes on a first principal surface of the second piezoelectric layer, wherein the first piezoelectric layer and the first and second electrodes define a first acoustic wave resonator, the second piezoelectric layer and the third and fourth electrodes define a second acoustic wave resonator, and an angle between a crystal orientation of the first piezoelectric layer and a direction perpendicular or substantially perpendicular to a lengthwise direction of the pair of the first and second electrodes is different from an angle between a crystal orientation of the second piezoelectric layer and a direction perpendicular or substantially perpendicular to a lengthwise direction of the pair of the third and fourth electrodes.