A surface acoustic wave device includes a piezoelectric substrate and a multi-layer interdigital transducer electrode disposed on the piezoelectric substrate. The multi-layer interdigital transducer electrode includes a first electrode layer and a second electrode layer. The second electrode layer is disposed between the piezoelectric substrate and the first electrode layer. The first electrode layer has a higher density than a density of the second electrode layer. The second electrode layer has a higher conductivity than a conductivity of the first electrode layer. Related radio frequency modules and wireless communication devices are also provided.

Disclosed is a device that includes a crystalline substrate and a patterned aluminum-based material layer disposed onto the crystalline substrate. The patterned aluminum-based material layer has a titanium-alloyed surface. A titanium-based material layer is disposed over select portions of the titanium-alloyed surface. In an exemplary embodiment, the patterned aluminum-based material layer forms a pair of interdigitated transducers to provide a surface wave acoustic (SAW) device. The SAW device of the present disclosure is usable to realize SAW-based filters for wireless communication equipment.

An elastic wave device includes an LiNbO.sub.3 substrate, a first elastic wave resonator including a first IDT electrode and a first dielectric film, and a second elastic wave resonator including a second IDT electrode and a second dielectric film. A Rayleigh wave travels along at least one surface of the elastic wave device. A thickness of the first dielectric film differs from a thickness of the second dielectric film. A propagation direction of an elastic wave in the first elastic wave resonator coincides with a propagation direction of an elastic wave in the second elastic wave resonator. Euler angles of the LiNbO.sub.3 substrate fall within a range of (0°±5°, θ, 0°±10°).

Aspects of this disclosure relate to an acoustic wave resonator with transverse mode suppression. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can be a conductive strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. A layer of the mass loading strip can have a density that is at least as high as a density of a material of the interdigital transducer electrode. The material of the interdigital transducer can impact acoustic properties of the acoustic wave resonator.

A filter device includes a first series line, one or more first parallel lines extending from the first series line, two or more first series IDT electrodes on the first series line, and one or more first parallel IDT electrodes on the one or more first parallel lines. At least one of the two or more first series IDT electrodes is a first-type electrode. A dielectric layer is between the first-type electrode and a substrate. At least one of the two or more first series IDT electrodes except the first-type electrode and the one or more first parallel IDT electrodes is a second-type electrode directly contacting the substrate. A first series IDT electrode of the two or more first series IDT electrodes that has a largest pitch of electrode fingers is the first-type electrode.

Certain aspects of the present disclosure provide a surface acoustic wave (SAW) device with one or more intermediate layers for reduced self-heating and methods for fabricating such a SAW device. One example SAW device generally includes a piezoelectric layer and an interdigital transducer (IDT) disposed above the piezoelectric layer. The IDT generally includes a first electrode having a first busbar and a first plurality of fingers. The first electrode generally includes a first copper layer disposed above the piezoelectric layer, a first intermediate layer disposed above the first copper layer, the first intermediate layer comprising a different material than the first copper layer, and a second copper layer disposed above the first intermediate layer.

Dispersive delay lines are disclosed. The dispersive delay line can include a piezoelectric substrate having a first interdigital transducer electrode on a first region of the piezoelectric substrate and a second interdigital transducer electrode on a second region of the piezoelectric substrate. The dispersive delay line is arranged such that an acoustic wave is configured to propagate from the first interdigital transducer electrode to the second interdigital transducer electrode though a third region of the piezoelectric substrate. An additional material positioned on the third region of the piezoelectric substrate can impact acoustic wave propagation velocity. Related radio frequency modules, wireless communications devices, and methods are disclosed.

An acoustic wave device includes an IDT electrode laminated on a piezoelectric substrate and defining a first resonator, and an IDT electrode laminated on the piezoelectric substrate and defining a second resonator. The first and second resonators are connected in parallel or in series. The IDT electrode of the first resonator includes an electrode layer including an epitaxial film and the IDT electrode of the second resonator includes an electrode layer including a non-epitaxial film.

A surface acoustic wave resonator includes one IDT electrode and reflectors. When a distance between an electrode finger Fe(k) and an electrode finger Fe(k+1) is defined as a k-th electrode finger pitch, in an electrode finger Fe(k−1), the electrode finger Fe(k), and the electrode finger Fe(k+1), a value obtained by dividing a difference between the electrode finger pitch and a section average electrode finger pitch, which is an average of the electrode finger pitch and the electrode finger pitch, by an overall average electrode finger pitch is defined as a pitch deviation ratio, and a distribution obtained by calculating the pitch deviation ratio for all electrode fingers of the IDT electrode or the reflectors is defined as a histogram of the pitch deviation ratio, the IDT electrode or the reflectors have a standard deviation of the pitch deviation ratio in the histogram larger than or equal to about 0.2%.

A surface acoustic wave device includes a piezoelectric single crystal substrate and an electrode. The piezoelectric single crystal substrate is made of LiTaO.sub.3 or LiNbO.sub.3. The electrode includes a titanium film formed on the piezoelectric single crystal substrate and an aluminum film or a film containing aluminum as a main component. The aluminum film or the film is formed on the titanium film. The aluminum film or the film containing aluminum as the main component is a twin crystal film or a single crystal film, the aluminum film or the film has a (111) plane that is non-parallel to a surface of the piezoelectric single crystal substrate with an angle θ, and the aluminum film or the film has a [−1, 1, 0] direction parallel to an X-direction of a crystallographic axis of the piezoelectric single crystal substrate.