Acoustic wave device is disclosed. the acoustic wave device can include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode having a non-zero tilt angle. The non-zero tilt angle can between 5° to 15°. The interdigital transducer electrode is configured to shift stopband of the acoustic wave device and to reduce a slanted stopband.

An SAW device 1 includes a piezoelectric substrate 13, an IDT electrode 5 on a first major surface 3a of the piezoelectric substrate 13, a capacitance element 31 which is located on the first major surface 3a and is connected to the IDT electrode 5, and a cover 9 which is superimposed only on the capacitance element 31 between the IDT electrode 5 and the capacitance element 31.

An acoustic wave filter device includes a piezoelectric layer, a high-acoustic-velocity member, a low-acoustic-velocity film between the high-acoustic-velocity member and the piezoelectric layer, and first and second IDT electrodes on the piezoelectric layer to define acoustic wave resonators. An acoustic wave resonator of a series-arm resonator portion closest to an antenna end and/or an acoustic wave resonator of a parallel-arm resonator portion closest to the antenna end includes the first IDT electrode including first and second electrode fingers, and the remaining acoustic wave resonators include the second IDT electrode including third and fourth electrode fingers. In the first IDT electrode, a central area, first and second low-acoustic-velocity areas, and first and second high-acoustic-velocity areas extend along a direction perpendicular or substantially perpendicular to an acoustic wave propagating direction. First and second envelopes connecting the tips of the third and fourth electrode fingers of the second IDT electrode are inclined.

Aspects of the disclosure relate to wireless communication, and high-frequency filters with resonators. One example is a frequency band filter circuit having a split resonator. The split resonator comprises a resonator including a first section of a shared input busbar, a first section of a shared output busbar, and an electrode structure between the first section of the shared input busbar and the first section of the shared output busbar, the electrode structure configured for a resonance. The split resonator also comprises a detuned resonator. The detuned resonator includes a second section of the shared input busbar, a second section of the shared output busbar, and a detuned electrode structure between the second section of the shared input busbar and the second section of the shared output busbar, the detuned electrode structure configured for a detuned resonance different from the resonance.

This invention discloses a acoustic surface wave filter in the field of acoustic surface wave filters. The acoustic surface wave filter consists of two different piezoelectric substrates, a series resonator group is made on one piezoelectric substrate, and a parallel resonators group is made on the other; The series and parallel resonator groups on the piezoelectric substrates form a trapezoidal structure; the series resonator group is connected with the parallel resonator group; in which the series resonator group is composed of several series resonators and electrodes, and the parallel resonator group is composed of several parallel resonators and electrodes; as a result, the problems that the present acoustic surface wave filters are difficult to satisfy different relative bandwidths and better rectangle coefficient simultaneously are solved; and the effects of increasing the relative bandwidth of the acoustic surface wave filter, reducing the insertion loss and optimizing the rectangle coefficient are achieved.

Acoustic wave resonators are disclosed that include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode has a rotation angle and a tilt angle. The rotation angle and the tilt angle can together increase a figure of merit of the acoustic wave device. The rotation angle and the tilt angle can both be non-zero.

There are disclosed acoustic resonators and method of fabricating acoustic resonators. An acoustic resonator includes a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to a surface of a substrate except for portions of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern on the front surface includes an interdigital transducer (IDT) with interleaved fingers of the IDT disposed on the diaphragm. A periodic array of holes is provided in the diaphragm.

An electro acoustic resonator compatible with thin piezoelectric films and providing additional degrees of freedom is provided. The resonator comprises an IDT section with two bus bars (ES,BB) and electrode fingers (ES,EF). The IDT section is slanted by an angle α through shearing and rotated as a whole by an angle β with respect to the piezoelectric axis (PA).

An acoustic wave device includes a piezoelectric substrate and a transducer. The piezoelectric substrate has a surface. The transducer is disposed on the surface. The transducer includes a first electrode, a second electrode, and at least one protrusion. The first electrode extends along a first direction and has a first end. The second electrode extends along the first direction and has a second end. The first electrode and the second electrode are spaced apart from each other along a second direction. The at least one protrusion is disposed at the first end of the first electrode. The at least one protrusion extends along the first direction and partially obstruct the first end.

Acoustic wave device is disclosed. the acoustic wave device can include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode has a non-zero tilt angle. The non-zero tilt angle can between 5° to 15°. A thickness of the interdigital transducer electrode is at least 40% of a thickness of the piezoelectric layer, 400 nm, or 0.08λ where λ is the wavelength generated by the acoustic wave device.