An acoustic wave device is disclosed. The acoustic wave device can include a support substrate that includes a first substrate portion, a second substrate portion, and a third substrate portion between the first substrate portion and the second substrate portion. The acoustic wave device can include a piezoelectric layer that includes a first portion over the first substrate portion and a second portion over the second substrate portion. The piezoelectric layer can be arranged such that a region over the third substrate portion is free from the piezoelectric layer. The acoustic wave device can include a filter circuit formed on the first portion of the piezoelectric layer. The acoustic wave device can include a cancelation circuit on the second portion of the piezoelectric layer.

An acoustic wave device includes a substrate including a piezoelectric layer, first and second resonators on the substrate, and a shared reflector. The second resonator is located on the substrate adjacent to the first resonator and has different frequency characteristics than the first resonator. The shared reflector is located on the substrate between the first resonator and the second resonator and is a reflector for both the first resonator and the second resonator. The first resonator includes a first interdigital transducer electrode with electrode fingers positioned with a first pitch. The second resonator includes a second interdigital transducer electrode with electrode fingers positioned with a second pitch. A lower limit frequency of a stop band of the shared reflector is between a lower limit frequency of a stop band of the first resonator and a lower limit frequency of a stop band of the second resonator. An upper limit frequency of the stop band of the shared reflector is between an upper limit frequency of the stop band of the first resonator and an upper limit frequency of the stop band of the second resonator.

An acoustic wave device includes a substrate, a first resonator, a second resonator, and a shared reflector. The second resonator is adjacent to the first resonator and has different frequency characteristics different than the first resonator. The first resonator includes a first interdigital transducer electrode. The second resonator includes a second interdigital transducer electrode. The shared reflector has frequency characteristics that are the same as both frequency characteristics of the first resonator and frequency characteristics of the second resonator or between the frequency characteristics of the first resonator and the frequency characteristics of the second resonator. a higher-order mode frequency of the first resonator and a higher-order mode frequency of the second resonator coincides. When the number of electrode fingers of the shared reflector is even, an electrode finger facing the shared reflector in the first interdigital transducer electrode and an electrode finger facing the shared reflector in the second interdigital transducer electrode have the same polarity. When the number of electrode fingers of the shared reflector is odd, an electrode finger facing the shared reflector in the first interdigital transducer electrode and an electrode finger facing the shared reflector in the second interdigital transducer electrode have opposite polarities.

An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and a pair of reflectors provided on both sides of the IDT electrode in a first direction on the piezoelectric substrate, the first direction being a propagation direction of an acoustic wave. The pair of reflectors include a plurality of electrode fingers and a plurality of electrode fingers, respectively, which extend in a second direction, the second direction being perpendicular to the first direction. The electrode finger widths of second end portions are greater than the electrode finger widths of first end portions. The electrode finger width at any given position in the electrode fingers is equal to or greater than the electrode finger width at a position closer than the given position to the first end portions.

An acoustic wave device includes a piezoelectric substrate a reverse-velocity surface of which is convex, an interdigital transducer electrode disposed on the piezoelectric substrate, and mass addition films stacked above the interdigital transducer electrode. The interdigital transducer electrode includes a central region, first and second edge regions, first and second gap regions located outside the first and second edge regions, first and second inner busbar regions, and first and second outer busbar regions. The mass addition films are stacked in at least the first and second edge regions and the first and second inner busbar regions.

Improved surface acoustic wave structures (or elements) that can be used to realize any of a wide variety of dispersive or non-dispersive transversal SAW filters that are distinct from prior known means for producing such filters are disclosed. The devices and structures may include stepped acoustic wave delay modification elements that can be used to implement transversal filter impulse response functions in a manner analogous to the use of interdigital transducers. The structures disclosed are of particular usefulness to implement SAW devices at high frequencies where normal photolithographic resolution would prove limiting. Aspects and embodiments of the present invention would be useful to produce SAW devices for use in a wide variety of applications, including as components in cell phones, in radar and other communications and electronic systems, and as wired or wireless sensors or sensor-tags.

An interdigital transducer increased propagation frequency and a method for making the same is described. The transducer comprises a substrate for propagation of acoustic waves comprising a first surface having alternating high and low surface portions extending laterally across the substrate, a set of elongate first electrodes, each first electrode disposed on a respective high surface portion and a set of elongate second electrodes, each second electrode disposed on a respective low surface portion such that the first and second electrodes are alternately adjacent to one another, the high and low surface portions being substantially equal in width to each electrode of the first and second sets of electrodes.

Acoustic wave resonators are disclosed that include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode has a rotation angle and a tilt angle. The rotation angle and the tilt angle can together increase a figure of merit of the acoustic wave device. The rotation angle and the tilt angle can both be non-zero.

A surface acoustic wave device can have a piezoelectric layer and at least one interdigital transducer electrode thereon with a trapezoidal shape. This can be useful to fill dead space or voids between nonparallel elements on the layer. For example, an array with ranks of slanted interdigital transducer electrodes may not be aligned with non-slanted elements (e.g., a surface acoustic wave filter). This can leave voids or openings with unused portions of the piezoelectric layer. Trapezoidal elements such as those described here can solve this problem and help suppress transverse modes.

Certain aspects of the present disclosure provide an electroacoustic device and methods for signal processing via the electroacoustic device. One example electroacoustic device generally includes a first surface acoustic wave (SAW) resonator comprising a first apodized interdigital transducer (IDT) disposed between a first busbar and a second busbar, and a second SAW resonator comprising a second apodized IDT disposed between the second busbar and a third busbar, wherein the second busbar is at an angle with respect to at least one of the first busbar or the third busbar.