A method of constructing an RF filter comprises designing an RF filter that includes a plurality of resonant elements disposed, a plurality of non-resonant elements coupling the resonant elements together to form a stop band having a plurality of transmission zeroes corresponding to respective frequencies of the resonant elements, and a sub-band between the transmission zeroes. The non-resonant elements comprise a variable non-resonant element for selectively introducing a reflection zero within the stop band to create a pass band in the sub-band. The method further comprises changing the order in which the resonant elements are disposed along the signal transmission path to create a plurality of filter solutions, computing a performance parameter for each of the filter solutions, comparing the performance parameters to each other, selecting one of the filter solutions based on the comparison of the computed performance parameters, and constructing the RF filter using the selected filter solution.

A passband filter includes a first and second microelectromechanical resonator system, each including a resonating beam, a drive electrode, and a sense electrode. An AC input signal is coupled to the drive electrode of the first and second microelectromechanical resonator system. A differential-to-single ended amplifier has a first input and second input respectively coupled to the sense electrodes of the first and second microelectromechanical resonator systems. An output of the differential-to-single ended amplifier is an output of the passband filter that provides a bandpass filtered signal of the AC input signal. A DC bias signal is coupled to the resonating beams of the first and second microelectromechanical resonator systems. The first microelectromechanical resonator system exhibits a hardening nonlinear behavior defining an upper stop frequency of the passband and the second microelectromechanical resonator system exhibits a softening nonlinear behavior defining a lower stop frequency of the passband.

Aspects of this disclosure relate to acoustic wave devices on stacked die. A first die can include first acoustic wave device configured to generate a boundary acoustic wave. A second die can include a second acoustic wave device configured to generate a second boundary acoustic wave, in which the second die is stacked with the first die. The first acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and high acoustic velocity layers on opposing sides of the piezoelectric layer. The high acoustic velocity layers can each have an acoustic velocity that is greater than a velocity of the boundary acoustic wave.

Aspects of this disclosure relate to an acoustic wave device that includes high velocity layers on opposing sides of a piezoelectric layer. A low velocity layer can be positioned between the piezoelectric layer and one of the high velocity layers, in which the low velocity layer has a lower acoustic velocity than the high velocity layers. The acoustic wave device can be configured to generate a boundary acoustic wave such that acoustic energy is concentrated at a boundary of the piezoelectric layer and the low velocity layer.

The present disclosure relates to a high power and low loss acoustic filter that includes a first node, a second node, a first power bypass path, and a first acoustic resonator (AR) path. The first power bypass path extends between the first node and the second node. The first AR path also extends between the first node and the second node, is in parallel with the first power bypass path, and includes at least one first acoustic resonator that form an acoustic resonator network. Herein, the first AR path has a notch filter response. The first power bypass path and the first AR path form a first filter cell that has a band-pass filter response.

A temperature-controlled RF resonator. The resonator includes an insulating thermal enclosure within which are implemented: at least one resonant element configured to deliver an RF output signal when supplied with an RF input signal; at least one heating element configured to supply thermal energy within the thermal enclosure when the at least one heating element is powered by an LF electric power signal; and at least one temperature sensor configured to deliver an LF electric measurement signal as a function of the temperature inside the thermal enclosure. Such an RF resonator has at least one input/output port crossing the insulating thermal enclosure and propagating at least: one signal from among the RF signals; and another signal from among the LF electric signals.

A package for a tunable filter is disclosed. In an embodiment, the tunable filter includes a substrate having a first interconnection plane and a semiconductor device assembled on the substrate in a first component plane, the semiconductor device electrically connected to the first interconnection plane and containing tunable passive components. The filter further includes a control unit arranged in the first component plane, a dielectric layer arranged above the first component plane, a second component plane arranged on the dielectric layer and discrete passive devices arranged in the second component plane and interconnected with the semiconductor device, wherein the tunable passive components are tunable by the control unit.

Aspects of this disclosure relate to acoustic wave devices on stacked die. A first die can include first acoustic wave device configured to generate a boundary acoustic wave. A second die can include a second acoustic wave device configured to generate a second boundary acoustic wave, in which the second die is stacked with the first die. The first acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and high acoustic velocity layers on opposing sides of the piezoelectric layer. The high acoustic velocity layers can each have an acoustic velocity that is greater than a velocity of the boundary acoustic wave.

A notch filter and a multi-frequency notch filter. The notch filter includes at least one notch filtering unit, each of the at least one notch filtering unit includes an input port, an output port, at least three resonators and at least one inductive element, and the at least three resonators include at least two first resonators and at least one second resonator. The at least two first resonators are connected in series to each other, the at least two first resonators in series are connected in series between the input port and the output port, a first end of each of the at least one second resonator is connected to a connection point between two adjacent first resonators, and a second end of the each of the at least one second resonator is connected to a fixed potential end.

A temperature-controlled RF resonator. The resonator includes an insulating thermal enclosure within which are implemented: at least one resonant element configured to deliver an RF output signal when supplied with an RF input signal; at least one heating element configured to supply thermal energy within the thermal enclosure when the at least one heating element is powered by an LF electric power signal; and at least one temperature sensor configured to deliver an LF electric measurement signal as a function of the temperature inside the thermal enclosure. Such an RF resonator has at least one input/output port crossing the insulating thermal enclosure and propagating at least: one signal from among the RF signals; and another signal from among the LF electric signals.