The present disclosure provides a single crystal film bulk acoustic resonator, a manufacturing method for a single crystal film bulk acoustic resonator, and a filter, and relates to the technical field of filters. The method includes: sequentially forming a buffer layer, a piezoelectric layer, and a first electrode that are stacked on a temporary base substrate; forming a first bonding layer on the first electrode; providing a substrate; etching the substrate to form a plurality of first bumps on a surface of the substrate; forming a second bonding layer covering top surfaces of the plurality of first bumps on the surface of the substrate; and bonding the second bonding layer located at the top surfaces of the plurality of first bumps to the first bonding layer. During bonding, the area of the top surfaces of the first bumps can be controlled by etched grooves, so the area of the second bonding layer located at the top surfaces of the first bumps can be controlled, thereby realizing the control of a bonding area. By controlling the bonding area, the balance between the bonding requirement and the bonding reliability is realized.

Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

A bulk acoustic resonator filter includes a plurality of bulk acoustic resonators connected between first and second radio frequency (RF) ports to form a frequency band, wherein each of the plurality of bulk acoustic resonators includes a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes, the plurality of bulk acoustic resonators include first and second bulk acoustic resonators having different differences between a resonant frequency and an antiresonant frequency, and different ratios of a thickness of the piezoelectric layer to a total thickness of the first and second electrodes, and/or different thicknesses of the piezoelectric layer.

Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components

An acoustic resonator filter includes at least one series acoustic resonator electrically connected between a first port and a second port in series, through which a radio frequency (RF) signal passes; at least one second shunt acoustic resonator electrically shunt-connected between the at least one series acoustic resonator and a ground; and at least one first shunt acoustic resonator electrically shunt-connected between the at least one series acoustic resonator and a ground and having a resonance frequency higher than a resonance frequency of the at least one second shunt acoustic resonator. At least one shunt acoustic resonator, among the at least one first shunt acoustic resonator and the at least one second shunt acoustic resonator has a temperature coefficient of frequency (TCF) corresponding to resonance frequency sensitivity more insensitive than resonance frequency sensitivity according to a change in temperature of the at least one series acoustic resonator filter.

Aspects of this disclosure relate to bulk acoustic wave components. A bulk acoustic wave component can include a substrate, at least one bulk acoustic wave resonator on the substrate, and a cap enclosing the at least one bulk acoustic wave resonator. The cap can include a sidewall spaced apart from an edge of the substrate. The sidewall can be 5 microns or less from the edge of the substrate.

An RF diplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The diplexer can include a pair of filter circuits, each with a plurality of series resonator devices and shunt resonator devices. In the ladder topology, the series resonator devices are connected in series while shunt resonator devices are coupled in parallel to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a plurality of series resonator devices, and a pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. A multiplexing device or inductor device can be configured to select between the signals coming through the first and second filter circuits.