A filter circuit includes a plurality of first resonators provided in a series arm, a plurality of second resonators provided in a parallel arm, and at least one or more third resonators that are electrically connected in series with each other and are electrically connected in parallel with the first resonators in the series arm. An anti-resonant frequency of the third resonators is lower than an anti-resonant frequency of the second resonators. A combined capacitance of the at least one or more third resonators electrically connected in series with each other is smaller than an electrostatic capacitance of the second resonators.

A filter circuit includes a plurality of first resonators provided in a series arm, a plurality of second resonators provided in a parallel arm, and at least one or more third resonators that are electrically connected in series with each other and are electrically connected in parallel with the first resonators in the series arm. An anti-resonant frequency of the third resonators is lower than an anti-resonant frequency of the second resonators. A combined capacitance of the at least one or more third resonators electrically connected in series with each other is smaller than an electrostatic capacitance of the second resonators.

Piezoelectric acoustic metamaterial resonators include a piezoelectric substrate having a top surface and a bottom surface and a plurality of magnetostrictive members disposed on the top surface of the piezoelectric substrate and extending along a length of the piezoelectric substrate and spaced across a width of the piezoelectric substrate.

Piezoelectric acoustic metamaterial resonators include a piezoelectric substrate having a top surface and a bottom surface and a plurality of magnetostrictive members disposed on the top surface of the piezoelectric substrate and extending along a length of the piezoelectric substrate and spaced across a width of the piezoelectric substrate.

Two or more ME resonators are connected in series and in parallel generating a high sensitive, energy efficient and broadband miniature antenna and other conductor devices.

A filter with bulk acoustic wave devices is disclosed. The filter includes a first bulk acoustic wave resonator and a second bulk acoustic wave resonator. The first bulk acoustic wave resonator includes a first raised frame structure. The first raised frame structure is a multi-layer raised frame structure. The second bulk acoustic wave resonator includes a second raised frame structure. The first raised frame structure has at least one more raised frame layer than the second raised frame structure.

A filter with bulk acoustic wave devices is disclosed. The filter includes a first bulk acoustic wave resonator and a second bulk acoustic wave resonator. The first bulk acoustic wave resonator includes a first raised frame structure. The first raised frame structure is a multi-layer raised frame structure. The second bulk acoustic wave resonator includes a second raised frame structure. The first raised frame structure has at least one more raised frame layer than the second raised frame structure.

A filter is disclosed. The filter can be a band pass filter or a band rejection filter. The filter can have bulk acoustic wave resonators. The filter can include a shunt bulk acoustic wave resonator and a series bulk acoustic wave resonator. The shunt bulk acoustic wave resonator and the series bulk acoustic wave resonator include different raised frame structures. The different raised frame structures contribute to one of the shunt bulk acoustic wave resonator or the series bulk acoustic wave resonator to have a higher quality factor below a resonant frequency than the other.

A filter circuit includes a plurality of first resonators provided in a series arm, a plurality of second resonators provided in a parallel arm, and at least one or more third resonators that are electrically connected in series with each other and are electrically connected in parallel with the first resonators in the series arm. An anti-resonant frequency of the third resonators is lower than an anti-resonant frequency of the second resonators. A combined capacitance of the at least one or more third resonators electrically connected in series with each other is smaller than an electrostatic capacitance of the second resonators.

Disclosed is a stacked common mode filter in which an ESD absorption layer is arranged in a common mode filter applied to the mipi C-PHY standard, so that damage to an element caused by ESD is prevented while a change in filter performance is prevented. The disclosed stacked common mode filter comprises: a filter layer having a plurality of coils; a lower magnetic layer arranged below the filter layer; an upper magnetic layer arranged on the filter layer; and an ESD absorption layer arranged inside the lower magnetic layer and/or the upper magnetic layer.