Patent classifications
H03H9/76
SURFACE ACOUSTIC WAVE RESONATORS
Disclosed herein are embodiments of a ladder-type filter comprising a plurality of series arm resonators and a plurality of parallel arm resonators, at least one of the plurality of series arm resonators including a piezoelectric substrate and an interdigital transducer electrode disposed on the piezoelectric substrate, an aperture W1 of the interdigital transducer electrode being configured to be less than 13λ, where λ is a wavelength of a surface acoustic wave excited by the interdigital transducer electrode. The relationship between the aperture W1 and the wavelength λ can be W1 < 13λ, W1 < 11λ, W1 < 4λ, or W1 > 6λ.
SURFACE ACOUSTIC WAVE RESONATORS
Disclosed herein are embodiments of a ladder-type filter comprising a plurality of series arm resonators and a plurality of parallel arm resonators, at least one of the plurality of series arm resonators including a piezoelectric substrate and an interdigital transducer electrode disposed on the piezoelectric substrate, an aperture W1 of the interdigital transducer electrode being configured to be less than 13λ, where λ is a wavelength of a surface acoustic wave excited by the interdigital transducer electrode. The relationship between the aperture W1 and the wavelength λ can be W1 < 13λ, W1 < 11λ, W1 < 4λ, or W1 > 6λ.
Elastic wave resonator, elastic wave filter apparatus, and duplexer
In an elastic wave resonator, a first IDT electrode, a second IDT electrode, a first reflector, and a second reflector are located on a piezoelectric substrate. The first IDT electrode and the second IDT electrode share a shared bus bar. Between a first terminal and a second terminal, the first IDT electrode and the second IDT electrode are connected in parallel. The shared bus bar and the first reflector are connected to the first terminal. A first bus bar and a second bus bar are connected to the second reflector, and are further connected to the second terminal.
Acoustic wave device, high frequency front end circuit, and communication apparatus
An acoustic wave device includes a piezoelectric substrate made of LiNbO.sub.3, and a dielectric film provided on the piezoelectric substrate to cover first and second IDT electrodes on the piezoelectric substrate. The first and second IDT electrodes include main electrode layers. When wave lengths determined by electrode finger pitches of the first and second IDT electrodes are λ.sub.1 and λ.sub.2, respectively, the average value thereof is λ.sub.0, λ.sub.1/λ.sub.0=1+X, and λ.sub.2/λ.sub.0=1−X, a relationship of 0.05≤X≤0.65 is satisfied. The wavelength λ.sub.1 is the longest, and the wavelength λ.sub.2 is the shortest. In Euler angles (φ, θ, ψ) of the piezoelectric substrate, φ is 0°±5°, ψ is 0°±10°, and θ satisfies Expression 1, wherein a relationship of B.sub.1<T×r≤0.10λ.sub.0 and B.sub.2<T×r≤0.10λ.sub.0 are satisfied.
Acoustic wave device, high frequency front end circuit, and communication apparatus
An acoustic wave device includes a piezoelectric substrate made of LiNbO.sub.3, and a dielectric film provided on the piezoelectric substrate to cover first and second IDT electrodes on the piezoelectric substrate. The first and second IDT electrodes include main electrode layers. When wave lengths determined by electrode finger pitches of the first and second IDT electrodes are λ.sub.1 and λ.sub.2, respectively, the average value thereof is λ.sub.0, λ.sub.1/λ.sub.0=1+X, and λ.sub.2/λ.sub.0=1−X, a relationship of 0.05≤X≤0.65 is satisfied. The wavelength λ.sub.1 is the longest, and the wavelength λ.sub.2 is the shortest. In Euler angles (φ, θ, ψ) of the piezoelectric substrate, φ is 0°±5°, ψ is 0°±10°, and θ satisfies Expression 1, wherein a relationship of B.sub.1<T×r≤0.10λ.sub.0 and B.sub.2<T×r≤0.10λ.sub.0 are satisfied.
ACOUSTIC WAVE DEVICE, HIGH FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION APPARATUS
An acoustic wave device includes a piezoelectric substrate made of LiNbO.sub.3, and a dielectric film provided on the piezoelectric substrate to cover first and second IDT electrodes on the piezoelectric substrate. The first and second IDT electrodes include main electrode layers. When wave lengths determined by electrode finger pitches of the first and second IDT electrodes are λ.sub.1 and λ.sub.2, respectively, the average value thereof is λ.sub.0, λ.sub.1/λ.sub.0=1+X, and λ.sub.2/λ.sub.0=1−X, a relationship of 0.05≤X≤0.65 is satisfied. The wavelength λ.sub.1 is the longest, and the wavelength λ.sub.2 is the shortest. In Euler angles (φ, θ, ψ) of the piezoelectric substrate, φ is 0°±5°, ψ is 0°±10°, and θ satisfies Expression 1, wherein a relationship of B.sub.1<T×r≤0.10λ.sub.0 B.sub.2<T×r≤0.10λ.sub.0 are satisfied.
ACOUSTIC WAVE DEVICE, HIGH FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION APPARATUS
An acoustic wave device includes a piezoelectric substrate made of LiNbO.sub.3, and a dielectric film provided on the piezoelectric substrate to cover first and second IDT electrodes on the piezoelectric substrate. The first and second IDT electrodes include main electrode layers. When wave lengths determined by electrode finger pitches of the first and second IDT electrodes are λ.sub.1 and λ.sub.2, respectively, the average value thereof is λ.sub.0, λ.sub.1/λ.sub.0=1+X, and λ.sub.2/λ.sub.0=1−X, a relationship of 0.05≤X≤0.65 is satisfied. The wavelength λ.sub.1 is the longest, and the wavelength λ.sub.2 is the shortest. In Euler angles (φ, θ, ψ) of the piezoelectric substrate, φ is 0°±5°, ψ is 0°±10°, and θ satisfies Expression 1, wherein a relationship of B.sub.1<T×r≤0.10λ.sub.0 B.sub.2<T×r≤0.10λ.sub.0 are satisfied.
Mobile terminal for expanding bandwidth of LTE B41 frequency band, and method thereof
A mobile terminal and a method for expanding a bandwidth of a B41 frequency band in LTE are disclosed. The mobile includes a multimode multiband power amplifier, a duplexer, a first surface acoustic wave (SAW) filter, a selection module, and a radio frequency transmission module. When the multimode multiband power amplifier identifies that the initial signal is a signal in the B41 frequency band, the multimode multiband power amplifier determines a frequency band range of the signal in the B41 frequency band and outputs a transmitting signal in the B41 frequency band.
Mobile terminal for expanding bandwidth of LTE B41 frequency band, and method thereof
A mobile terminal and a method for expanding a bandwidth of a B41 frequency band in LTE are disclosed. The mobile includes a multimode multiband power amplifier, a duplexer, a first surface acoustic wave (SAW) filter, a selection module, and a radio frequency transmission module. When the multimode multiband power amplifier identifies that the initial signal is a signal in the B41 frequency band, the multimode multiband power amplifier determines a frequency band range of the signal in the B41 frequency band and outputs a transmitting signal in the B41 frequency band.
Acoustic wave device, high frequency front end circuit, and communication apparatus
An acoustic wave device includes a piezoelectric substrate made of LiNbO.sub.3, and a dielectric film provided on the piezoelectric substrate to cover first and second IDT electrodes on the piezoelectric substrate. The first and second IDT electrodes include main electrode layers. When wave lengths determined by electrode finger pitches of the first and second IDT electrodes are λ.sub.1 and λ.sub.2, respectively, the average value thereof is λ.sub.0, λ.sub.1/λ.sub.0=1+X, and λ.sub.2/λ.sub.0=1−X, a relationship of 0.05≤X≤0.65 is satisfied. The wavelength λ.sub.1 is the longest, and the wavelength λ.sub.2 is the shortest. In Euler angles (φ, θ, ψ) of the piezoelectric substrate, φ is 0°±5°, ψ is 0°±10°, and θ satisfies Expression 1, wherein a relationship of B.sub.1<T×r≤0.10λ.sub.0 and B.sub.2<T×r≤0.10λ.sub.0 are satisfied.