Provided is a three-dimensional (3D) transmon qubit apparatus including a body portion, a driver, a transmon element disposed in an internal space of the body portion, a first tunable cavity module disposed in the internal space of the body, and comprising a first superconductive metal panel; and a second tunable cavity module disposed in the internal space of the body, and comprising a second superconductive metal panel, wherein the transmon element is disposed between the first superconductive metal panel and the second superconductive metal panel; wherein the first tunable cavity module and the second tunable cavity module are configured to adjust a distance between the first superconductive metal panel and the second superconductive metal panel, and wherein the driver is configured to tune a resonance frequency by adjusting a 3D cavity by adjusting the distance between the first superconductive metal panel and the second superconductive metal panel.

A positioning device for a radio frequency matcher comprises mainly a micro controller, and at least two detecting elements connected to the micro controller. The detecting elements are disposed on electric motors to detect the rotation angles of the electric motors. When the electric motors adjust the positions of the moving pieces of the tuning elements based on the volume of error signals to change the electrical reactance values so that they may approximately meet the requirement of the radio frequency load and that the radio frequency load may achieve a highest possible power, the micro controller may interpret the signals of the rotation angle detecting elements and output the interpreted values for a user to determine whether the moving pieces of the tuning elements are at right positions to approximately meet the requirement of the radio frequency load and maximize the power of the radio frequency load of the radio frequency matcher.

A balanced on-wafer load pull tuner system includes an intelligent, independent and universal mechanical balancing and contact controlling device, supporting automatic microwave single or multi-probe slide screw tuners. It allows contacting and stable on-wafer testing of sub-micrometric devices. Ultra-low loss rigid airlines (bend-lines) used to connect the tuner with the semiconductor chips, in order to improve the tuning range at the DUT reference plane, transfer mechanical movements of the wafer probes attached to the rigid bend-lines, when the tuner mobile carriages move horizontally. A precisely controlled counter-weight allows contacting the DUT and balanced load pull operation by controlling the center of gravity of the assembly.

A balanced on-wafer load pull tuner system includes an intelligent, independent and universal mechanical balancing and contact controlling device, supporting automatic microwave single or multi-probe slide screw tuners. It allows contacting and stable on-wafer testing of sub-micrometric devices. Ultra-low loss rigid airlines (bend-lines) used to connect the tuner with the semiconductor chips, in order to improve the tuning range at the DUT reference plane, transfer mechanical movements of the wafer probes attached to the rigid bend-lines, when the tuner mobile carriages move horizontally. A precisely controlled counter-weight allows contacting the DUT and balanced load pull operation by controlling the center of gravity of the assembly.

A system is described for maintaining an inductive-capacitive (LC) network at resonance while the excitation frequency may be varied between a number of discrete frequencies at desired instants controlled by a modulation input, while taking into account component parameter errors due environmental and ageing as well as manufacturing tolerances. Control of the resonance while the excitation frequency changes permits the transmission of frequency modulation (FM) or frequency shift keying (FSK) information through an inductively coupled power transfer system.

A system is described for maintaining an inductive-capacitive (LC) network at resonance while the excitation frequency may be varied between a number of discrete frequencies at desired instants controlled by a modulation input, while taking into account component parameter errors due environmental and ageing as well as manufacturing tolerances. Control of the resonance while the excitation frequency changes permits the transmission of frequency modulation (FM) or frequency shift keying (FSK) information through an inductively coupled power transfer system.

Provided is a three-dimensional (3D) transmon qubit apparatus including a body portion, a driver, a transmon element disposed in an internal space of the body portion, a first tunable cavity module disposed in the internal space of the body, and comprising a first superconductive metal panel; and a second tunable cavity module disposed in the internal space of the body, and comprising a second superconductive metal panel, wherein the transmon element is disposed between the first superconductive metal panel and the second superconductive metal panel; wherein the first tunable cavity module and the second tunable cavity module are configured to adjust a distance between the first superconductive metal panel and the second superconductive metal panel, and wherein the driver is configured to tune a resonance frequency by adjusting a 3D cavity by adjusting the distance between the first superconductive metal panel and the second superconductive metal panel.

There are disclosed various apparatuses and methods for tuning a resonance frequency. In some embodiments there is provided an apparatus (200) comprising at least one input electrode (202, 204) for receiving radio frequency signals; a graphene foil (210) for converting at least part of the radio frequency signals into mechanical energy; at least one dielectric support element (212) to support the graphene foil (210) and to space apart the at least one input electrode (202, 204) and the graphene foil (210). The graphene foil (210) has piezoelectric properties. In some embodiments there is provided a method comprising receiving radio frequency signals by at least one input electrode (202, 204) of an apparatus (200); providing a bias voltage to the apparatus (200) for tuning the resonance frequency of the apparatus (200); and converting at least part of the radio frequency signals into mechanical energy by a graphene foil (210) having piezoelectric properties.

There are disclosed various apparatuses and methods for tuning a resonance frequency. In some embodiments there is provided an apparatus (200) comprising at least one input electrode (202, 204) for receiving radio frequency signals; a graphene foil (210) for converting at least part of the radio frequency signals into mechanical energy; at least one dielectric support element (212) to support the graphene foil (210) and to space apart the at least one input electrode (202, 204) and the graphene foil (210). The graphene foil (210) has piezoelectric properties. In some embodiments there is provided a method comprising receiving radio frequency signals by at least one input electrode (202, 204) of an apparatus (200); providing a bias voltage to the apparatus (200) for tuning the resonance frequency of the apparatus (200); and converting at least part of the radio frequency signals into mechanical energy by a graphene foil (210) having piezoelectric properties.

A passive slide screw load pull tuner structure can be used on-wafer, in millimeter-wave frequencies from 25 to 110 GHz and above. It uses special tuning probe brackets and a short slabline mounted below the tuner housing, which holds the control gear. The tuner is mounted under an angle matching the angle of the wafer-probe, is connected directly of the wafer-probe and ensures optimum tuning range.