A waveform conversion circuit for turning a switch device on and off by applying a control signal from a controller to a gate terminal of the switch device is provided. The switch device has the wile terminal, a drain terminal, and a source terminal. The waveform conversion circuit includes a parallel circuit of a first capacitor and a first resistor and a voltage clamp unit. The parallel circuit is coupled between the controller and the gate terminal. The voltage clamp unit is coupled between the gate terminal and the source terminal and configured to clamp a voltage across the gate terminal to the source terminal at a first voltage in an OFF pulse of the control signal and at a second voltage in an ON pulse of the control signal.

A waveform conversion circuit for turning a switch device on and off by applying a control signal from a controller to a gate terminal of the switch device is provided. The switch device has the wile terminal, a drain terminal, and a source terminal. The waveform conversion circuit includes a parallel circuit of a first capacitor and a first resistor and a voltage clamp unit. The parallel circuit is coupled between the controller and the gate terminal. The voltage clamp unit is coupled between the gate terminal and the source terminal and configured to clamp a voltage across the gate terminal to the source terminal at a first voltage in an OFF pulse of the control signal and at a second voltage in an ON pulse of the control signal.

A change rate control circuit computes a first drive speed, which is a gate drive speed of a gate of a drive-subject element, for controlling a change rate of an element voltage of the drive-subject element at a target change rate during a change period. A timing generating circuit acquires, in advance, a delay time caused when the gate is driven and determines a switching timing, at which the element voltage reaches a switching threshold voltage which is lower than a desired switching voltage by a predetermined value, during turn-off of the drive-subject element and generates a timing signal representing the switching timing. A speed change circuit changes the gate drive speed from the first drive speed to a second drive speed at the switching timing during turn-off of the drive-subject element.

Various embodiments of the teachings herein include an electronic switch comprising: a semiconductor switch; and a series circuit. The series circuit is arranged parallel to the semiconductor switch and includes a first resistor, a capacitor, and a second resistor arranged in order R-C-R. The first resistor and the second resistor are arranged to create a bifilar resistor.

Various embodiments of the teachings herein include an electronic switch comprising: a semiconductor switch; and a series circuit. The series circuit is arranged parallel to the semiconductor switch and includes a first resistor, a capacitor, and a second resistor arranged in order R-C-R. The first resistor and the second resistor are arranged to create a bifilar resistor.

A switch circuit of an embodiment includes a radio-frequency switch and a level shifter circuit. The radio-frequency switch, which includes a first switch group and a second switch group each including a plurality of switches, switches transmission/reception of a radio-frequency signal. The level shifter circuit outputs a first signal for controlling ON/OFF of each switch of the first switch group and a second signal for controlling ON/OFF of each switch of the second switch group.

A bootstrap circuit supporting fast charging and discharging and a chip. A voltage measurement module (12) and a switch module (11) are arranged, and the voltage measurement module (12) controls an operating state of the switch module (11); during charging, under a specific condition, the switch module (11) is enabled to be in an on state so as to achieve fast charging of a voltage output end; and during discharging, the purpose of fast discharging is achieved by means of a second field effect transistor (MP5) arranged in the bootstrap circuit.

A gallium nitride (GaN) device, where a drain of the GaN device includes a p-type (P-GaN) layer and a drain metal. The drain metal includes a plurality of first structural intervals and a plurality of second structural intervals. The plurality of first structural intervals and the plurality of second structural intervals are alternately distributed in the gate width direction. In this way, the drain metal implements local injection of holes for the device in the first structural intervals, and forms ohmic contact in the second structural intervals, implementing current conduction from a drain to a source of the device.

The present description concerns a method of controlling at least one switch (TH), including: the reception of signals (S3-i) having between one another at least one phase shift representative of a desired state of said at least one switch; the obtaining, from said signals, of a value (Si) representative of the desired state; and the application of the representative value to said at least one switch.

The present disclosure relates to a bootstrapped switch circuit, a track-and-hold circuit, an analog-to-digital converter, a method for operating a track-and-hold circuit, a base station, and a mobile station. The bootstrapped switch circuit comprises an output for an output signal, a first input, a switching element configured to couple the output with a signal from the first input, a bootstrapper capacitor configured to drive the switching element, and a second input coupled to the bootstrapper capacitor.