H03K17/0826

Method and Device for Short Circuit Detection in Power Semiconductor Switches
20170248646 · 2017-08-31 ·

Devices and methods are provided, which detect a short circuit condition related to a semiconductor switch. A short circuit condition may be determined when a control signal of the switch exceeds a first reference, and a change of load current of the switch exceeds a second reference.

Gate drive circuit
11431332 · 2022-08-30 · ·

A gate drive circuit includes a driver for driving a gate of a switching element, a peak voltage detector, and a drive capacity calculator. The peak voltage detector detects a peak voltage at a main terminal of the switching element when the switching element is OFF. The drive capacity calculator calculates a voltage difference value between the detected peak voltage and an allowable voltage value at the main terminal of the switching element, where the allowable voltage is based on the specifications of the switching element. The drive capacity calculator changes a drive capacity of the driver to gradually decrease the difference between the detected peak voltage and the allowable voltage.

Double-Base-Connected Bipolar Transistors with Passive Components Preventing Accidental Turn-On
20170271328 · 2017-09-21 · ·

The present application discloses new approaches to providing “passive-off” protection for a B-TRAN-like device. Even if the control circuitry is inactive, AC coupling uses transient voltage on the external terminals to prevent forward biasing an emitter junction. Preferably the same switches which implement diode-mode and pre-turnoff operation are used as part of the passive-off circuit operation.

COMMUNICATIONS USING AN INDUCTIVE COUPLING

A controller comprising a driver interface referenced to a first reference potential, a drive circuit referenced to a second reference potential, and an inductive coupling. The driver interface comprises a first receiver configured to compare a portion of signals having a first polarity on the first terminal of the inductive coupling with a first threshold, and a second receiver configured to compare a portion of signals having a second polarity on the second terminal of the inductive coupling with a third threshold. The drive circuit comprises a first transmitter configured to drive current in a first direction in the second winding to transmit first signals, and a second transmitter configured to drive current in a second direction in the second winding to transmit second signals, the second direction opposite the first direction.

METHOD AND SYSTEM OF OPERATING A BI-DIRECTIONAL DOUBLE-BASE BIPOLAR JUNCTION TRANSISTOR (B-TRAN)
20220190115 · 2022-06-16 · ·

Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper collector-emitter of the transistor, through the transistor, and from a lower collector-emitter to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower collector-emitter to the lower terminal by opening a lower-main FET and thereby commutating a first shutoff current through a lower base of the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.

Current limiting circuit for a control circuit for controlling a semiconductor switch system

A power distribution system and method has a controller and at least one semiconductor switch. The power distribution system additionally has an on status detector which detects the status of the semiconductor switches, and an overcurrent status circuit which checks for overcurrent conditions.

ELECTROSTATIC PROTECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT

An electrostatic protection circuit includes first and second output terminals, a first diode circuit connected between the first output terminal and a common node, a second diode circuit connected between the second output terminal and the common node, an intermediate voltage circuit that is connected between the first output terminal and the second output terminal and that is configured to generate, at the common node, an intermediate voltage having an intermediate voltage value between a voltage value of the first output terminal and a voltage value of the second output terminal, and a clamp circuit configured to electrically connect the common node to a ground line in accordance with the intermediate voltage.

Transistors drivers with fast shutdown-capability, and associated systems and methods

A method for quickly shutting down a transistor in a switching circuit includes (a) generating a feedback signal associated with current flowing through the transistor, (b) transmitting the feedback signal through an isolating device to a controller, (c) detecting an over-current condition in the switching circuit without transmitting information through the isolating device, and (d) shutting-down the transistor in response to detecting the over-current condition, without transmitting information through the isolating device. A transistor driver includes logic circuitry, an isolating device, driver circuitry configured to drive a transistor according to a control signal received from the logic circuitry via the isolating device, and over-current circuitry configured to (a) detect an over-current condition without receiving information via the isolating device and (b) cause the driver circuitry to shut-down the transistor in response to detection of the over-current condition, without receiving information via the isolating device.

POWER TRANSISTOR MODULE AND CONTROLLING METHOD THEREOF
20210367593 · 2021-11-25 ·

A power transistor module includes a power transistor device and a control circuit. The control circuit is electrically connected to the power transistor device for providing at least one gate voltage to drive the power transistor device, and adjusting the at least one gate voltage in response to an output power of the power transistor module. When the output power is greater than a predetermined power load, the at least one gate voltage has a first swing amplitude; and when the output power is less than or equal to the predetermined power load the at least one gate voltage has a second swing amplitude less than the first swing amplitude.

Controller for a semiconductor switch can include a transmitter and receiver that communicate across galvanic isolation using an inductive coupling

A controller comprising a driver interface referenced to a first reference potential, a drive circuit referenced to a second reference potential, and an inductive coupling. The driver interface comprises a first receiver configured to compare a portion of signals having a first polarity on the first terminal of the inductive coupling with a first threshold, and a second receiver configured to compare a portion of signals having a second polarity on the second terminal of the inductive coupling with a third threshold. The drive circuit comprises a first transmitter configured to drive current in a first direction in the second winding to transmit first signals, and a second transmitter configured to drive current in a second direction in the second winding to transmit second signals, the second direction opposite the first direction.