An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.

A semiconductor device includes a first transistor that flows a current to a load, a current generation circuit that outputs a current corresponding to a power consumption of the first transistor, a temperature sensor, a resistor-capacitor network coupled between the current generation circuit and the temperature sensor and an overheat detection circuit coupled to a connection point of the current generation circuit and the resistor-capacitor network, wherein the resistor-capacitor network comprises a resistor and a capacitor corresponding to a thermal resistance and a thermal capacitance between the first transistor and the temperature sensor.

A power converter includes a semiconductor element disposed on a substrate, a thermistor element for detecting the temperature of the substrate, the thermistor element being disposed on the substrate, a current detection resistor having one end connected to a ground side node and another end that is grounded, a first voltage detection unit configured to detect a first potential at the other end of the current detection resistor and a second potential at the ground side node, and output a first detection signal, a control unit configured to control the semiconductor element based on the first detection signal, a temperature detection resistor having one end that is connected to a reference potential and another end that is connected to a detection node, and a temperature detection unit configured to detect a temperature based on a third potential at the detection node, and output a temperature information signal.

A method can include, in response to a power supply voltage transition, setting a temperature window to a first temperature range by operation of a temperature circuit formed on a semiconductor device. In response to a temperature of the semiconductor device being determined to be outside of the first temperature range, changing the temperature range of the temperature window until the temperature of the semiconductor device is determined to be within the temperature window.

An ignition device capable of more reliably protecting a primary winding of an ignition coil from high temperature is provided. The ignition device includes an ignition coil, a switching element, a temperature sensor, and a thermal cutout circuit. A primary winding of the ignition coil is connected to a DC power supply and the switching element. The temperature sensor is provided to measure the temperature of the switching element. The thermal cutout circuit forcibly turns off the switching element when the temperature of the switching element becomes higher than a predetermined forcible turn-off temperature Toff. The thermal cutout circuit is configured to lower the forcible turn-off temperature Toff when the power supply voltage Vb of the DC power supply decreases.

In a method of operating a circuit, at a beginning of a first edge of a driving signal, a first transistor is turned ON to pull, at a first changing rate, a voltage of the driving signal on the first edge from a first voltage toward a second voltage. Then, in response to the voltage of the driving signal on the first edge reaching a threshold voltage between the first voltage and the second voltage, the first transistor is turned OFF and an output circuit is caused to start a second edge of an output signal in response to the first edge of the driving signal. The second edge has a slew rate corresponding to a second changing rate of the voltage of the driving signal on the first edge from the threshold voltage toward the second voltage. The second changing rate is smaller than the first changing rate.

In a method of operating a circuit, at a beginning of a first edge of a driving signal, a first transistor is turned ON to pull, at a first changing rate, a voltage of the driving signal on the first edge from a first voltage toward a second voltage. Then, in response to the voltage of the driving signal on the first edge reaching a threshold voltage between the first voltage and the second voltage, the first transistor is turned OFF and an output circuit is caused to start a second edge of an output signal in response to the first edge of the driving signal. The second edge has a slew rate corresponding to a second changing rate of the voltage of the driving signal on the first edge from the threshold voltage toward the second voltage. The second changing rate is smaller than the first changing rate.

An electronic fuse circuit includes an electronic switch with a load current path coupled between an output node and a supply node and that connects or disconnects the output node and the supply node in accordance with a drive signal. The circuit includes a control circuit to generate the drive signal based on an input signal. A monitoring circuit is included in the control circuit to receive a current sense signal representing the load current passing through the load current path and to determine a first protection signal based on the current sense signal and a wire parameter. The first protection signal is indicative of whether to disconnect the output node from supply node. The control circuit changes from normal mode to idle mode when the load current is below a given current threshold and another criterion is fulfilled.

A change rate control circuit computes a first drive speed, which is a gate drive speed of a gate of a drive-subject element, for controlling a change rate of an element voltage of the drive-subject element at a target change rate during a change period. A timing generating circuit acquires, in advance, a delay time caused when the gate is driven and determines a switching timing, at which the element voltage reaches a switching threshold voltage which is lower than a desired switching voltage by a predetermined value, during turn-off of the drive-subject element and generates a timing signal representing the switching timing. A speed change circuit changes the gate drive speed from the first drive speed to a second drive speed at the switching timing during turn-off of the drive-subject element.

A supply voltage detecting circuit has a voltage detection circuit and a current clamping circuit. The voltage detection circuit receives and detects a supply voltage and is used to detect to generate a low-voltage detection signal. When the supply voltage is lower than a set level, the low voltage detection signal output by the voltage detection circuit turns off the current clamping circuit, and a transistor current flowing through the voltage detection circuit is proportional to the supply voltage; and when the supply voltage is higher than or equal to the set level, the low voltage detection signal output by the voltage detection circuit turns on the current clamping circuit, and the current clamping circuit provides a constant current to maintain the operation of the voltage detection circuit, wherein the transistor current flowing through the voltage detection circuit is proportional to the constant current.