A driving circuit providing a driving signal at a driving terminal to drive a power switch. The driving signal has a first driving period and a second driving period. Both the first driving period and the second driving period have a first driving time interval. The driving circuit has a first equivalent on resistor established during the first driving time interval and located between a first voltage node and the driving terminal. The first equivalent on resistor has a first equivalent on resistance during the first driving time interval of the first driving period and has a second equivalent on resistance during the first driving time interval of the second driving period. The first equivalent on resistance and the second equivalent on resistance are not equal.

An integrated circuit can comprise an output terminal, a power transistor having a first current electrode coupled to the output terminal and a second current electrode coupled to a power supply terminal, a driver having an output coupled to a control electrode of the power switch, a capacitor having a first terminal coupled to the output terminal and a second terminal coupled to a circuit node, a first low pass filter coupled between the circuit node and an input of the driver, the first low pass filter having a first cut off frequency, a set of current sources, and a second low pass filter coupled between the circuit node and an output of the set of current sources. The second low pass filter can have a second cut off frequency that is higher than the first cut off frequency.

A circuit includes a high-side transistor pair and a low-side transistor pair having a common intermediate node. The high-side transistor pair includes a first transistor having a control node and a current flowpath therethrough configured to provide a current flow line between a supply voltage node and the intermediate node, and a second transistor having a current flowpath therethrough coupled to the control node of the first transistor. The low-side transistor pair includes a third transistor having a control node and a current flowpath therethrough configured to provide a current flow line between the intermediate node and the reference voltage node, and a fourth transistor having a current flowpath therethrough coupled to the control node of the third transistor. Testing circuitry is configured to be coupled to at least one of the second transistor and the fourth transistor to apply thereto a test-mode signal.

Embodiments of an SMPS controller and a method for operating a switched-mode power supply (SMPS) controller are described. In an embodiment, an SMPS controller includes a gate driver circuit configured to generate a drive signal for a switch of an SMPS and a current sense electrical terminal configured to receive sensed current corresponding to the switch and to conduct driver discharge current from the gate driver circuit.

A method includes detecting a signal on a switching node connected to a power switch, detecting a gate drive voltage of the power switch, during a gate drive process of the power switch, reducing a gate drive current based on a first comparison result obtained from comparing the signal with a first threshold, and during the gate drive process of the power switch, increasing the gate drive current based on a second comparison result obtained from comparing the gate drive voltage with a second threshold.

A power source switch circuit and an operation method thereof are provided. The power source switch circuit may include a switch circuit that includes a first switch configured switch a supply of a voltage from a first power supply circuit to a power supply terminal of a power amplifier, and a second switch configured to switch a supply of a voltage from a second power supply circuit to the power supply terminal of the power amplifier; and a switch controller configured to control the switch circuit to set the first switch and the second switch in a turned-on state during a first period when the first switch is turned off and the second switch is turned on.

An apparatus for regulating a slew time of an output voltage of a motor driver system includes a gate current control circuit which has a first input coupled to receive a target slew time and a second input coupled to receive a slew time. The gate current control circuit provides an incremented gate current if the slew time is greater than the target slew time and provides a decremented gate current if the slew time is less than the target slew time. The apparatus includes a gate driver which has a first input coupled to receive a PWM signal and a second input coupled to receive the gate current. The gate driver provides a gate drive signal.

A semiconductor device includes a semiconductor part having a first surface and a second surface opposite to the first surface, a first electrode on the first surface, a second electrode on the second surface, first to third control electrodes between the first electrode and the semiconductor part. The first to third control electrodes are biased independently from each other. The semiconductor part includes a first layer of a first-conductivity-type, a second layer of a second-conductivity-type, a third layer of the first-conductivity-type and the fourth layer of the second-conductivity-type. The second layer is provided between the first layer and the first electrode. The third layer is selectively provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The second layer opposes the first to third control electrode with insulating films interposed.

A semiconductor device includes a semiconductor part having a first surface and a second surface opposite to the first surface, a first electrode on the first surface, a second electrode on the second surface, first to third control electrodes between the first electrode and the semiconductor part. The first to third control electrodes are biased independently from each other. The semiconductor part includes a first layer of a first-conductivity-type, a second layer of a second-conductivity-type, a third layer of the first-conductivity-type and the fourth layer of the second-conductivity-type. The second layer is provided between the first layer and the first electrode. The third layer is selectively provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The second layer opposes the first to third control electrode with insulating films interposed.

A solid state relay and a method for controlling a signal path between an AC-signal output and a load in a power amplifier assembly are disclosed. The relay comprises a first and a second MOSFET having a common gate junction, a common source junction and wherein and wherein a drain terminal of a first MOSFET and a drain terminal of a second MOSFET form relay terminals. The solid state relay further comprises a control circuit comprising a positive side comprising a first controlled current generator configured to provide a first control current to the gate junction, and a negative side comprising a current mirror circuit configured to sink a second current from the source junction. Hereby, a generic solid state speaker relay has been disclosed. The relay performs up to the most stringent demands regarding pop/click on high quality products. It can be used to ground wire break, hot wire break and BTL (Bridge Tied Load) break. The design is rather tolerable to different MOSFETs and very competitive in quality and price.