A charge pump cell for a charge pump is disclosed that may exhibit improved latch-up immunity. A circuit may be arranged at the charge pump cell to apply a voltage to a bulk contact of a charge transfer transistor of such a charge pump cell at least partially responsive to a relationship between a voltage at a first terminal of the charge transfer transistor and a voltage at a second terminal of the charge transfer transistor. A charge pump including one or more such charge pump cells may include a control loop that is configured to control a pumping signal at least partially responsive to a state of an output voltage of the charge pump.

An ideal diode circuit is described which uses an NMOS transistor as a low-loss ideal diode. The control circuit for the transistor is referenced to the anode voltage and not to ground, so the control circuitry may be low voltage circuitry, even if the input voltage is very high, referenced to earth ground. A capacitor is clamped to about 10-20 V, referenced to the anode voltage. The clamped voltage powers a differential amplifier for the detecting if the anode voltage is greater than the cathode voltage. The capacitor is charged to the clamped voltage during normal operation of the ideal diode by controlling the conductivity of a second transistor coupled between the cathode and the capacitor, enabling the circuit to be used with a wide range of frequencies and voltages. All voltages applied to the differential amplifier are equal to or less than the clamped voltage.

A charge pump cell for a charge pump is disclosed that may exhibit improved latch-up immunity. A circuit may be arranged at the charge pump cell to apply a voltage to a bulk contact of a charge transfer transistor of such a charge pump cell at least partially responsive to a relationship between a voltage at a first terminal of the charge transfer transistor and a voltage at a second terminal of the charge transfer transistor. A charge pump including one or more such charge pump cells may include a control loop that is configured to control a pumping signal at least partially responsive to a state of an output voltage of the charge pump.

A range sensor and a method thereof. The range sensor includes a light source configured to project a plurality of sheets of light at an angle within a field of view (FOV); an image sensor, wherein the image sensor is offset from the light source; collection optics; and a controller connected to the light source, the image sensor, and the collection optics, and configured to simultaneously determine a range of a distant object based on direct time-of-flight (TOF) and a range of a near object based on triangulation.

A range sensor and a method thereof. The range sensor includes a light source configured to project a plurality of sheets of light at an angle within a field of view (FOV); an image sensor, wherein the image sensor is offset from the light source; collection optics; and a controller connected to the light source, the image sensor, and the collection optics, and configured to simultaneously determine a range of a distant object based on direct time-of-flight (TOF) and a range of a near object based on triangulation.

Pre-conditioning circuitry for pre-conditioning a node of a circuit to support a change in operation of the circuit, wherein the circuit is operative to change a state of the node to effect the change in operation of the circuit, and wherein the pre-conditioning circuitry is configured to apply a voltage, current or charge directly to the node to reduce the magnitude of the change to the state of the node required by the circuit to achieve the change in operation of the circuit.

In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

The disclosure provides a charging device, which includes an input terminal configured to receive an input voltage; an output terminal configured to connect a target load so as to charge the target load; a control terminal, configured to receive a control voltage; a junction field-effect transistor and a control circuit. The junction field-effect transistor includes at least: a drain, electrically connected to the input terminal so as to receive the input voltage; a source, electrically connected to the output terminal so as to output an output voltage and an output current; and a gate, electrically connected to the control terminal. The control circuit is electrically connected to the control terminal, and configured to change the control voltage based on a change in a load voltage so as to change a pinch-off voltage of the JFET by controlling a bias voltage on the gate, thereby controlling the output current.

An electronic chip includes a chip core including an input terminal, an output terminal, an external pad, and an input-output circuit coupled to the chip core and the external pad. The input-output circuit includes an enable terminal coupled to the chip core, a connection terminal coupled to the external pad, a switchable diode device coupled between a supply voltage and a reference voltage, and a levelling circuit. The switchable diode device is coupled to the connection terminal and the enable terminal and is configured to operate as a diode in response to a control signal in a first state applied to the enable terminal and to operate as an open circuit in response to the control signal in a second state applied to the enable terminal. The levelling circuit is coupled to the connection terminal, the input terminal of the chip core, and the output terminal of the chip core.