A bias circuit supplies bias voltage to a linear detector circuit. The bias circuit includes a transistor including a collector terminal, an emitter terminal, and a base terminal; a resistance element having one end connected to the collector terminal and the other end connected to a power line and the base terminal; a resistance element having one end connected to the emitter terminal; a transistor that switches between connection and disconnection between the resistance element and ground; collector voltage extended lines that transmit voltage corresponding to collector voltage as the bias voltage; and a transistor that is arranged on a path of one of the collector voltage extended lines and that switches between connection and disconnection between an output terminal of the linear detector circuit and the collector terminal.

An integrated circuit, including: a first current source; a second current source provided in parallel to the first current source; a first resistor with one end coupled to an output of the first current source; a first bipolar transistor that is diode-connected and is coupled to the other end of the first resistor; a second bipolar transistor that is diode-connected and is coupled to an output of the second current source; a second resistor coupled to the second bipolar transistor; and an output circuit configured to output a voltage based on a first voltage outputted from the first current source and a second voltage outputted from the second current source.

An integrated circuit, including: a first current source; a second current source provided in parallel to the first current source; a first resistor with one end coupled to an output of the first current source; a first bipolar transistor that is diode-connected and is coupled to the other end of the first resistor; a second bipolar transistor that is diode-connected and is coupled to an output of the second current source; a second resistor coupled to the second bipolar transistor; and an output circuit configured to output a voltage based on a first voltage outputted from the first current source and a second voltage outputted from the second current source.

A boot control circuit of a computer system is provided. The boot control circuit is coupled to a system power module. The boot control circuit includes a connection port module and a motherboard. The connection port module includes a detection pin. The motherboard includes a switch for controlling the system power module. The motherboard controls the system power module to provide power for booting the computer system according to a connection between the detection pin and the switch.

A boot control circuit of a computer system is provided. The boot control circuit is coupled to a system power module. The boot control circuit includes a connection port module and a motherboard. The connection port module includes a detection pin. The motherboard includes a switch for controlling the system power module. The motherboard controls the system power module to provide power for booting the computer system according to a connection between the detection pin and the switch.

A silicon carbide (SiC) metal oxide semiconductor (MOS) power device is disclosed which includes an SiC drain semiconductor region, an SiC drift semiconductor region coupled to the SiC drain semiconductor region, an SiC base semiconductor region coupled to the SiC drift semiconductor region, an SiC source semiconductor region coupled to the SiC base semiconductor region, a source electrode coupled to the SiC source semiconductor region, a drain electrode coupled to the SiC drain semiconductor region, a gate electrode, wherein voltage of the gate electrode with respect to the SiC base semiconductor region is less than or equal to about 12 V and thickness of the dielectric material is such that the electric field in the dielectric material is about 4 MV/cm when said gate voltage is about 12 V.

A silicon carbide (SiC) metal oxide semiconductor (MOS) power device is disclosed which includes an SiC drain semiconductor region, an SiC drift semiconductor region coupled to the SiC drain semiconductor region, an SiC base semiconductor region coupled to the SiC drift semiconductor region, an SiC source semiconductor region coupled to the SiC base semiconductor region, a source electrode coupled to the SiC source semiconductor region, a drain electrode coupled to the SiC drain semiconductor region, a gate electrode, wherein voltage of the gate electrode with respect to the SiC base semiconductor region is less than or equal to about 12 V and thickness of the dielectric material is such that the electric field in the dielectric material is about 4 MV/cm when said gate voltage is about 12 V.

An electronic device includes a hold circuit and a microcomputer. The hold circuit is connected to a power control line from a control device. The microcomputer starts measuring the time of a second state when the power control line transitions from a first state to the second state due to the control device. The microcomputer controls a power supply circuit to turn on power when the second state continues for a first predetermined time, and operates the hold circuit to maintain the power control line in the second state for a second predetermined time after the first predetermined time has elapsed.

An electronic device includes a hold circuit and a microcomputer. The hold circuit is connected to a power control line from a control device. The microcomputer starts measuring the time of a second state when the power control line transitions from a first state to the second state due to the control device. The microcomputer controls a power supply circuit to turn on power when the second state continues for a first predetermined time, and operates the hold circuit to maintain the power control line in the second state for a second predetermined time after the first predetermined time has elapsed.

A control circuit for a switch device including a first switch element including a movable contact and a drive coil that controls the movable contact of the first switch element, the control circuit for returning the movable contact when the drive coil turns off the movable contact after the drive coil turns on the movable contact during supply of a source voltage from a power source, the control circuit includes a second switch element inserted between a rectifier circuit or a surge absorbing element and the first switch element, the second switch element being turned off when the supply of the source voltage is turned off. The rectifier circuit or the surge absorbing element is connected between the power source and the control circuit. The first switch element is turned off the movable contact is returned by turning off the second switch element to turn off the first switch element.