A system includes a dry contact with a first pair of switchable electrodes, a wet contact with a second pair of switchable electrodes, an arc suppressor, and a controller circuit operatively coupled to the arc suppressor and the first and second pairs of switchable electrodes. The controller circuit is configured to detect a failure of the wet contact and determine a stick duration associated with the first pair of switchable electrodes. The stick duration is based on a duration between an instance when a coil of the dry contact is deactivated and an instance of separation of the first pair of switchable electrodes during deactivation of the coil. The controller circuit generates, in-situ and in real-time, health assessment for the first pair of switchable electrodes based on a comparison of the determined stick duration with an average stick duration associated with a window of observation.

The disclosure relates to a pulsed laser driver that utilizes a high-voltage switch transistor to support a high output voltage for a laser, and a low-voltage switch transistor that switches between an ON state and an OFF state to generate a pulsed current that is supplied to the laser to generate an output pulsed laser signal. The pulsed laser driver switches the low-voltage switch transistor between the ON state and the OFF state according to an input pulsed signal such that the output pulsed laser signal is modulated according to the input pulsed signal. The pulsed laser driver also utilizes a feedback control module to control the gate terminal voltage of the high-voltage switch transistor to improve the precision of the output pulsed laser signal.

The disclosure relates to a pulsed laser driver that utilizes a high-voltage switch transistor to support a high output voltage for a laser, and a low-voltage switch transistor that switches between an ON state and an OFF state to generate a pulsed current that is supplied to the laser to generate an output pulsed laser signal. The pulsed laser driver switches the low-voltage switch transistor between the ON state and the OFF state according to an input pulsed signal such that the output pulsed laser signal is modulated according to the input pulsed signal. The pulsed laser driver also utilizes a feedback control module to control the gate terminal voltage of the high-voltage switch transistor to improve the precision of the output pulsed laser signal.

A semiconductor device includes a semiconductor part having a first surface and a second surface opposite to the first surface, a first electrode on the first surface, a second electrode on the second surface, first to third control electrodes between the first electrode and the semiconductor part. The first to third control electrodes are biased independently from each other. The semiconductor part includes a first layer of a first-conductivity-type, a second layer of a second-conductivity-type, a third layer of the first-conductivity-type and the fourth layer of the second-conductivity-type. The second layer is provided between the first layer and the first electrode. The third layer is selectively provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The second layer opposes the first to third control electrode with insulating films interposed.

A semiconductor device includes a semiconductor part having a first surface and a second surface opposite to the first surface, a first electrode on the first surface, a second electrode on the second surface, first to third control electrodes between the first electrode and the semiconductor part. The first to third control electrodes are biased independently from each other. The semiconductor part includes a first layer of a first-conductivity-type, a second layer of a second-conductivity-type, a third layer of the first-conductivity-type and the fourth layer of the second-conductivity-type. The second layer is provided between the first layer and the first electrode. The third layer is selectively provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The second layer opposes the first to third control electrode with insulating films interposed.

In circuitry for measuring a voltage at a node, a capacitive divider is coupled to the node, wherein the capacitive divider provides a first output. A resistive divider is coupled to the node, wherein the resistive divider provides a second output.

In circuitry for measuring a voltage at a node, a capacitive divider is coupled to the node, wherein the capacitive divider provides a first output. A resistive divider is coupled to the node, wherein the resistive divider provides a second output.

An ignition device capable of more reliably protecting a primary winding of an ignition coil from high temperature is provided. The ignition device includes an ignition coil, a switching element, a temperature sensor, and a thermal cutout circuit. A primary winding of the ignition coil is connected to a DC power supply and the switching element. The temperature sensor is provided to measure the temperature of the switching element. The thermal cutout circuit forcibly turns off the switching element when the temperature of the switching element becomes higher than a predetermined forcible turn-off temperature Toff. The thermal cutout circuit is configured to lower the forcible turn-off temperature Toff when the power supply voltage Vb of the DC power supply decreases.

An ignition device capable of more reliably protecting a primary winding of an ignition coil from high temperature is provided. The ignition device includes an ignition coil, a switching element, a temperature sensor, and a thermal cutout circuit. A primary winding of the ignition coil is connected to a DC power supply and the switching element. The temperature sensor is provided to measure the temperature of the switching element. The thermal cutout circuit forcibly turns off the switching element when the temperature of the switching element becomes higher than a predetermined forcible turn-off temperature Toff. The thermal cutout circuit is configured to lower the forcible turn-off temperature Toff when the power supply voltage Vb of the DC power supply decreases.

A bias circuit supplies bias voltage to a linear detector circuit. The bias circuit includes a transistor including a collector terminal, an emitter terminal, and a base terminal; a resistance element having one end connected to the collector terminal and the other end connected to a power line and the base terminal; a resistance element having one end connected to the emitter terminal; a transistor that switches between connection and disconnection between the resistance element and ground; collector voltage extended lines that transmit voltage corresponding to collector voltage as the bias voltage; and a transistor that is arranged on a path of one of the collector voltage extended lines and that switches between connection and disconnection between an output terminal of the linear detector circuit and the collector terminal.