A switch circuit includes a transistor stack coupled between first and second ports. The transistor stack includes a group of multiple, adjacent, series-coupled transistors, and at least one additional transistor coupled in series with the group between the first and second ports to provide a first variably-conductive path between the first and second ports. The switch circuit also includes a balancing capacitor with a first terminal coupled to an input of the group of multiple, adjacent, series-coupled transistors, and a second terminal coupled to an output of the group of multiple, adjacent, series-coupled transistors.

A method is presented for forming a monolithically integrated semiconductor device. The method includes forming a first device including first hydrogenated silicon-based contacts formed on a first portion of a semiconductor material of an insulating substrate and forming a second device including second hydrogenated silicon-based contacts formed on a second portion of the semiconductor material of the insulating substrate. Source and drain contacts of the first device are formed before a gate contact of the first device and a gate contact of the second device is formed before the emitter and collector contacts of the second device. The first device can be a heterojunction field effect transistor (HJFET) and the second device can be a (heterojunction bipolar transistor) HBT. The HJFET and the HBT are integrated in a neuronal circuit and create negative differential resistance by forming a lambda diode.

A method is presented for forming a monolithically integrated semiconductor device. The method includes forming a first device including first hydrogenated silicon-based contacts formed on a first portion of a semiconductor material of an insulating substrate and forming a second device including second hydrogenated silicon-based contacts formed on a second portion of the semiconductor material of the insulating substrate. Source and drain contacts of the first device are formed before a gate contact of the first device and a gate contact of the second device is formed before the emitter and collector contacts of the second device. The first device can be a heterojunction field effect transistor (HJFET) and the second device can be a (heterojunction bipolar transistor) HBT. The HJFET and the HBT are integrated in a neuronal circuit and create negative differential resistance by forming a lambda diode.

A method is presented for forming a monolithically integrated semiconductor device. The method includes forming a first device including first hydrogenated silicon-based contacts formed on a first portion of a semiconductor material of an insulating substrate and forming a second device including second hydrogenated silicon-based contacts formed on a second portion of the semiconductor material of the insulating substrate. Source and drain contacts of the first device are formed before a gate contact of the first device and a gate contact of the second device is formed before the emitter and collector contacts of the second device. The first device can be a heterojunction field effect transistor (HJFET) and the second device can be a (heterojunction bipolar transistor) HBT. The HJFET and the HBT are integrated in a neuronal circuit and create negative differential resistance by forming a lambda diode.

A method is presented for forming a monolithically integrated semiconductor device. The method includes forming a first device including first hydrogenated silicon-based contacts formed on a first portion of a semiconductor material of an insulating substrate and forming a second device including second hydrogenated silicon-based contacts formed on a second portion of the semiconductor material of the insulating substrate. Source and drain contacts of the first device are formed before a gate contact of the first device and a gate contact of the second device is formed before the emitter and collector contacts of the second device. The first device can be a heterojunction field effect transistor (HJFET) and the second device can be a (heterojunction bipolar transistor) HBT. The HJFET and the HBT are integrated in a neuronal circuit and create negative differential resistance by forming a lambda diode.

A method is presented for forming a monolithically integrated semiconductor device. The method includes forming a first device including first hydrogenated silicon-based contacts formed on a first portion of a semiconductor material of an insulating substrate and forming a second device including second hydrogenated silicon-based contacts formed on a second portion of the semiconductor material of the insulating substrate. Source and drain contacts of the first device are formed before a gate contact of the first device and a gate contact of the second device is formed before the emitter and collector contacts of the second device. The first device can be a heterojunction field effect transistor (HJFET) and the second device can be a (heterojunction bipolar transistor) HBT. The HJFET and the HBT are integrated in a neuronal circuit and create negative differential resistance by forming a lambda diode.

A method is presented for forming a monolithically integrated semiconductor device. The method includes forming a first device including first hydrogenated silicon-based contacts formed on a first portion of a semiconductor material of an insulating substrate and forming a second device including second hydrogenated silicon-based contacts formed on a second portion of the semiconductor material of the insulating substrate. Source and drain contacts of the first device are formed before a gate contact of the first device and a gate contact of the second device is formed before the emitter and collector contacts of the second device. The first device can be a heterojunction field effect transistor (HJFET) and the second device can be a (heterojunction bipolar transistor) HBT. The HJFET and the HBT are integrated in a neuronal circuit and create negative differential resistance by forming a lambda diode.

A method is presented for forming a monolithically integrated semiconductor device. The method includes forming a first device including first hydrogenated silicon-based contacts formed on a first portion of a semiconductor material of an insulating substrate and forming a second device including second hydrogenated silicon-based contacts formed on a second portion of the semiconductor material of the insulating substrate. Source and drain contacts of the first device are formed before a gate contact of the first device and a gate contact of the second device is formed before the emitter and collector contacts of the second device. The first device can be a heterojunction field effect transistor (HJFET) and the second device can be a (heterojunction bipolar transistor) HBT. The HJFET and the HBT are integrated in a neuronal circuit and create negative differential resistance by forming a lambda diode.

A method is presented for forming a monolithically integrated semiconductor device. The method includes forming a first device including first hydrogenated silicon-based contacts formed on a first portion of a semiconductor material of an insulating substrate and forming a second device including second hydrogenated silicon-based contacts formed on a second portion of the semiconductor material of the insulating substrate. Source and drain contacts of the first device are formed before a gate contact of the first device and a gate contact of the second device is formed before the emitter and collector contacts of the second device. The first device can be a heterojunction field effect transistor (HJFET) and the second device can be a (heterojunction bipolar transistor) HBT. The HJFET and the HBT are integrated in a neuronal circuit and create negative differential resistance by forming a lambda diode.

A method is presented for forming a monolithically integrated semiconductor device. The method includes forming a first device including first hydrogenated silicon-based contacts formed on a first portion of a semiconductor material of an insulating substrate and forming a second device including second hydrogenated silicon-based contacts formed on a second portion of the semiconductor material of the insulating substrate. Source and drain contacts of the first device are formed before a gate contact of the first device and a gate contact of the second device is formed before the emitter and collector contacts of the second device. The first device can be a heterojunction field effect transistor (HJFET) and the second device can be a (heterojunction bipolar transistor) HBT. The HJFET and the HBT are integrated in a neuronal circuit and create negative differential resistance by forming a lambda diode.