An electric machine with variable torque generation having a tunable Halbach array configuration. The electric machine includes a magnet assembly for generating a magnetic field. The magnet assembly includes a plurality of fixed magnets disposed in a ring arrangement so that fixed magnets having a north pole faced toward the rotor or stator are alternated with fixed magnets having a south pole faced toward the rotor or stator, a plurality of rotatable magnets disposed within a respective slot formed between two adjacent fixed magnets, a drive assembly for turning the rotatable magnets within the slots to vary the magnetic field generated by the magnet assembly in the rotor or stator, the drive assembly configured to turn the rotatable magnets between a first position wherein the magnetic field in the rotor or stator is augmented and a second position wherein the magnetic field in the rotor or stator is cancelled.

An open circuit voltage photodetector comprises a photovoltaic device including a photovoltaic junction, and a transistor. The photovoltaic device is connected to the gate terminal of the transistor to input an open circuit voltage of the photovoltaic device to the gate terminal. An array of such photodetectors and a readout integrated circuit forms an image sensor. In a photodetection method, an open circuit voltage is generated in a photovoltaic device in response to illumination by incident radiation, and the open circuit voltage is applied to a gate terminal of a transistor to modulate a channel current flowing in a channel of the transistor. A readout electronic circuit may be fabricated with an extra transistor, and a photovoltaic device disposed on the readout electronic circuit and electrically connected to apply an open circuit voltage of the photovoltaic device to a gate of the extra transistor.

An open circuit voltage photodetector comprises a photovoltaic device including a photovoltaic junction, and a transistor. The photovoltaic device is connected to the gate terminal of the transistor to input an open circuit voltage of the photovoltaic device to the gate terminal. An array of such photodetectors and a readout integrated circuit forms an image sensor. In a photodetection method, an open circuit voltage is generated in a photovoltaic device in response to illumination by incident radiation, and the open circuit voltage is applied to a gate terminal of a transistor to modulate a channel current flowing in a channel of the transistor. A readout electronic circuit may be fabricated with an extra transistor, and a photovoltaic device disposed on the readout electronic circuit and electrically connected to apply an open circuit voltage of the photovoltaic device to a gate of the extra transistor.

The present disclosure provides a controller for controlling a GaN-based semiconductor device. The controller is configured to receive a current sensing signal V.sub.CS which is indicative of a drain-to-source current of the GaN-based semiconductor device and generate a control driving signal V.sub.DRV to the GaN-based semiconductor device such that a gate-to-source voltage V.sub.GS applied to the GaN-based semiconductor device for switching on the GaN-based semiconductor device is stabilized to a voltage value equal to a reference voltage V.sub.ref over an on-time duration. Impact of the change in the voltage drop across the current sensing resistor to the operation of the GaN-based semiconductor device is eliminated.

According to the present invention, an optical latch circuit includes a voltage detector configured to compare a first power generation voltage input from a first input terminal with a preset first threshold voltage and output a set signal from a determination output terminal when the first power generation voltage exceeds the first threshold voltage, a first photovoltaic element connected between the first input terminal and a grounding point in a forward direction and configured to output a first power generation voltage to the first input terminal according to photovoltaic power when light is radiated, and a feedback resistor inserted between the first input terminal and the determination output terminal.

According to one or more embodiments, a semiconductor device includes a mounting substrate and a semiconductor element on the mounting substrate. The mounting substrate has a first electrode pad and a second electrode pad. The semiconductor element has a supporting substrate, third and fourth electrode pads, first slits and second slits. The third and fourth electrode pads are provided on a first surface of the supporting substrate facing the mounting substrate. The first slits are provided both in the supporting substrate and in the third electrode pad. The second slits are provided both in the supporting substrate and in the fourth electrode pad. The semiconductor device further includes a first conductive bonding agent that connects the first electrode pad to the third electrode pad and a second conductive bonding agent that connects the second electrode pad to the fourth electrode pad.

According to one or more embodiments, a semiconductor device includes a mounting substrate and a semiconductor element on the mounting substrate. The mounting substrate has a first electrode pad and a second electrode pad. The semiconductor element has a supporting substrate, third and fourth electrode pads, first slits and second slits. The third and fourth electrode pads are provided on a first surface of the supporting substrate facing the mounting substrate. The first slits are provided both in the supporting substrate and in the third electrode pad. The second slits are provided both in the supporting substrate and in the fourth electrode pad. The semiconductor device further includes a first conductive bonding agent that connects the first electrode pad to the third electrode pad and a second conductive bonding agent that connects the second electrode pad to the fourth electrode pad.

Various embodiments provide a laser power beaming system that delivers power via high intensity light, such as from a laser, using either power over fiber or free space power to isolate (or eliminate) high frequency noise and electromagnetic interference (EMI) due to, for example, switching. Damage or other harms from the EMI may be prevented. The opto-isolated power may be delivered from a remote source, or within a switched device, such as a variable frequency drive (VFD), itself.

Various embodiments provide a laser power beaming system that delivers power via high intensity light, such as from a laser, using either power over fiber or free space power to isolate (or eliminate) high frequency noise and electromagnetic interference (EMI) due to, for example, switching. Damage or other harms from the EMI may be prevented. The opto-isolated power may be delivered from a remote source, or within a switched device, such as a variable frequency drive (VFD), itself.

A high-temperature power module integrated with an optically galvanic isolated gate driver. The power module includes one or more galvanic isolated gate driver boards, where each galvanic isolated gate driver board includes an optocoupler configured to transfer electrical signals between two isolated circuitry by using light. Furthermore, each galvanic isolated gate driver board includes a gate driver connected to the optocoupler, where the gate driver includes a power amplifier that receives a signal and produces a current drive input for a gate of a transistor.