In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material and a power source. A switch arrangement including a plurality of switches is provided, which is configured to selectively provide electrical power from the power source to the set of the heaters.

A rectangular electrical pulse enters a transmission line structure with single pass transit time equal to ½ the duration of the pulse, open circuit at the extreme end and a switch at its center. After a delay equal to ¾ of the rectangular pulse duration the central switch is closed to couple the contents of the transmission line structure into another transmission line of half impedance. The output pulse maintains the initial voltage, but is of half the initial duration, and double the initial power.

A rectangular electrical pulse enters a transmission line structure with single pass transit time equal to ½ the duration of the pulse, open circuit at the extreme end and a switch at its center. After a delay equal to ¾ of the rectangular pulse duration the central switch is closed to couple the contents of the transmission line structure into another transmission line of half impedance. The output pulse maintains the initial voltage, but is of half the initial duration, and double the initial power.

A voltage-controlled magnetic based device is described that includes a magnetic insulator; a topological insulator adjacent the magnetic insulator; and magnetic dopants within the topological insulator. The magnetic dopants are located within an edge region of the topological insulator to inhibit charge current flow in the topological insulator during a switching operation using an applied electric field generating by applying a switching voltage across two electrodes at opposite sides of the topological insulator. Power dissipation due to carrier-based currents can be avoided or at least minimized by the magnetic dopants at the edges of the topological insulator.

A voltage-controlled magnetic based device is described that includes a magnetic insulator; a topological insulator adjacent the magnetic insulator; and magnetic dopants within the topological insulator. The magnetic dopants are located within an edge region of the topological insulator to inhibit charge current flow in the topological insulator during a switching operation using an applied electric field generating by applying a switching voltage across two electrodes at opposite sides of the topological insulator. Power dissipation due to carrier-based currents can be avoided or at least minimized by the magnetic dopants at the edges of the topological insulator.

According to one embodiment, in a semiconductor device, a connection block includes multiple unit configurations, in each of which a first line extends along a first direction. A second line is placed above the first line and extends along a second direction which intersects with the first direction. A first variable resistance element has one end electrically connected to the first line and another end electrically connected to the second line. The third line is placed above the second line and extends along the first direction. A second variable resistance element has One end electrically connected to the second line and another end electrically connected to the third line. A fourth line is placed above the third line. The fourth line extends along the second direction. A third variable resistance element has one end electrically connected to the third line and another end electrically connected to the fourth line.

According to one embodiment, in a semiconductor device, a connection block includes multiple unit configurations, in each of which a first line extends along a first direction. A second line is placed above the first line and extends along a second direction which intersects with the first direction. A first variable resistance element has one end electrically connected to the first line and another end electrically connected to the second line. The third line is placed above the second line and extends along the first direction. A second variable resistance element has One end electrically connected to the second line and another end electrically connected to the third line. A fourth line is placed above the third line. The fourth line extends along the second direction. A third variable resistance element has one end electrically connected to the third line and another end electrically connected to the fourth line.

Provided is a load drive device with high stability (linearity) and a control method thereof capable of continuing a normal operation without stopping the load drive device even when a reverse current is temporarily detected with a specific inductive load in the load drive device in which a plurality of inductive loads are connected in parallel.

Provided is a load drive device with high stability (linearity) and a control method thereof capable of continuing a normal operation without stopping the load drive device even when a reverse current is temporarily detected with a specific inductive load in the load drive device in which a plurality of inductive loads are connected in parallel.

A semiconductor device includes a first diffusion region of a first type with embedded therein, a second and a third diffusion region of a second type different from the first type. The second and third diffusion regions are more doped than the first region. The second and third diffusion regions are each connected to a respective contact. A dielectric layer covers at least an edge of the second and third diffusion regions, and the region in between the second and third diffusion regions. A piezoelectric layer is disposed on, over, adjacent to or in contact with the dielectric layer. A first structure is in a first soft ferromagnetic material and is arranged to perform mechanical stress on the piezoelectric layer in response to a magnetic field.