In one embodiment, a voltage level shifter includes a first p-type metal-oxide-semiconductor (PMOS) transistor having a gate configured to receive an input signal in a first power domain, and a second PMOS transistor, wherein the first and second PMOS transistors are coupled in series between a supply voltage of a second power domain and a node. The voltage level shifter also includes an inverter having an input coupled to the node and an output coupled to a gate of the second PMOS transistor, and a first n-type metal-oxide-semiconductor (NMOS) transistor having a gate configured to receive the input signal in the first power domain, wherein the first NMOS transistor is coupled between the node and a ground.

An integrated circuit device includes a reference voltage channel, a first cell and a second cell. The reference voltage channel is configured to provide a first reference voltage and a second reference voltage. The first cell is coupled to the reference voltage channel, and is configured to receive the first reference voltage and the second reference voltage. The second cell is coupled to the reference voltage channel, and is configured to receive the first reference voltage and the second reference voltage.

A plurality of driver slice circuits arranged in parallel having a plurality of driver slice outputs, each driver slice circuit having a digital driver input and a driver slice output, each driver slice circuit configured to generate a signal level determined by the digital driver input, and a common output node connected to the plurality of driver slice outputs and a wire of a multi-wire bus, the multi-wire bus having a characteristic transmission impedance matched to an output impedance of the plurality of driver slice circuits arranged in parallel, each driver slice circuit of the plurality of driver slice circuits having an individual output impedance that is greater than the characteristic transmission impedance of the wire of the multi-wire bus.

Methods, apparatus, systems, and articles of manufacture corresponding to a low area and high speed termination detection circuit with voltage clamping are disclosed. An example apparatus includes a transistor including a first control terminal, first current terminal and a second current terminal, the second current terminal adapted to be coupled to a load. The apparatus further includes a logic gate including an input coupled to the first current terminal. The apparatus further includes a current source including a second control terminal, a third current terminal coupled to a voltage rail and a fourth current terminal coupled to the first current terminal and the input of the logic gate.

A level shifter may include: a discharge circuit configured to receive an input signal on the basis of a first power supply voltage, and discharge an internal node on the basis of the input signal; a charge supply circuit configured to supply charge to an output node from which an output signal is outputted, on the basis of a second power supply voltage; and a voltage adjustment circuit including a first MOS transistor coupled between the internal node and the output node, and configured to adjust the voltage of the output node on the basis of a bias voltage applied to the first MOS transistor, and stop the operation of adjusting the voltage of the output node on the basis of the bias voltage, when the levels of the first and second power supply voltages are equal to each other.

A new class of logic gates are presented that use non-linear polar material. The logic gates include multi-input majority gates. Input signals in the form of digital signals are driven to non-linear input capacitors on their respective first terminals. The second terminals of the non-linear input capacitors are coupled a summing node which provides a majority function of the inputs. In the multi-input majority or minority gates, the non-linear charge response from the non-linear input capacitors results in output voltages close to or at rail-to-rail voltage levels. In some examples, the nodes of the non-linear input capacitors are conditioned once in a while to preserve function of the multi-input majority gates.

A comparator circuit according to this embodiment includes: a comparator element configured to output a matching signal indicating whether or not a value of a first input signal matches a value of a second input signal; a flip-flop circuit configured to hold a data of a data input terminal based on a comparator clock signal and configured to output an enable signal for stopping an operation of the comparator element; and an internal signal generation circuit configured to output an internal signal to the data input terminal based on the matching signal and an output signal output from the flip-flop circuit.

A comparator circuit according to the present embodiment: including a comparator element configured to output a matching signal indicating whether or not a value of a first input signal matches a value of a second input signal; a flip-flop circuit including a data input terminal to which a constant potential is supplied and a clock input terminal and configured to hold a value of the data input terminal based on a self-clock signal input to the clock input terminal; and a clock generation circuit configured to generate the self-clock signal based on the matching signal.

Disclosed is technology that is driven using a positive feedback loop of a feedback field-effect transistor and is capable of performing a logic-in memory function. The logic-in-memory inverter includes a metal oxide semiconductor field-effect transistor, and a feedback field-effect transistor in which a drain region of a nanostructure is connected in series to a drain region of the metal oxide semiconductor field-effect transistor, wherein the logic-in-memory inverter performs a logical operation is performed based on an output voltage V.sub.OUT that changes depending on a level of an input voltage V.sub.IN that is input to a gate electrode of the feedback field-effect transistor and a gate electrode of the metal oxide semiconductor field-effect transistor while a source voltage V.sub.SS is input to a source region of the nanostructure and a drain voltage V.sub.DD is input to a source region of the metal oxide semiconductor field-effect transistor.

The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.