A system and method for monitoring a code overwrite error of a Redriver chip are disclosed. An analog to digital converter (ADC) monitors whether an EEPROM code of a Redriver chip has been overwritten in error. A Switch chip is utilized to separate the Redriver chip from a system management bus (SMbus) controller. A pull-up resistor keeps an SMbus at a Redriver chip/EEPROM side in a pull-up state. The ADC is utilized to monitor the SMbus. When an abnormal low level is monitored, an alarm signal is sent to the SMbus controller to give a risk alarm for an overwrite error. In addition, according to different ADC sampling rates, an SMbus may also be connected between the SMbus controller and an ADC with a high sampling rate, whereby SMbus data can be monitored.

The off-chip driving (OCD) device includes a signal transition detector, a front-end driver, a first main driver, a second main driver, a first resistance provider and a second resistance provider. The signal transition detector is used to detect a transition status of an input signal to generate decision information. The front-end driver generates control signals according to the decision information, and generates driving signals according to the input signal. The first main driver and the second main driver generate an output signal to a pad according to the driving signals. The first resistance provider adjusts a first resistance between the first main driver and the pad according to a first control signal. The second resistance provider adjusts a second resistance between the second main driver and the pad according to a second control signal.

Disclosed is a memory structure with reference-free single-ended sensing. The structure includes an array of non-volatile memory (NVM) cells (e.g., resistance programmable NVM cells) and a sense circuit connected to the array via a data line and a column decoder. The sense circuit includes field effect transistors (FETs) connected in parallel between an output node and a switch and inverters connected between the data line and the gates of the FETs, respectively. To determine the logic value of a stored bit, the inverters are used to detect whether or not a voltage drop occurs on the data line within a predetermined period of time. Using redundant inverters to control redundant FETs connected to the output node increases the likelihood that the occurrence of the voltage drop will be detected and captured at the output node, even in the presence of process and/or thermal variations. Also disclosed is a sensing method.

A word-line drive circuit, a word-line driver and a storage device are provided. The word-line drive circuit includes at least two SWDs. Each SWD is connected to an MWL for providing an enable signal and a sub word line. The SWD includes a holding transistor. A first end and a second end of the holding transistor are respectively connected to different sub word lines, and a gate receives a second drive signal. The SWD is configured to provide a first drive signal to a selected sub word line in response to the first drive signal and the enable signal, the selected sub word line being a sub word line connected to the first end or second end of the holding transistor, and to conduct the first end and the second end of the holding transistor in response to the first drive signal, the enable signal and the second drive signal.

A data processing system includes a memory configured to receive memory access requests. Each memory access request having a corresponding access address and having a corresponding parity bit for an address value of the corresponding access address. The corresponding access address is received over a plurality of address lines and the parity bit is received over a parity line. The memory includes a memory array having a plurality of memory cells arranged in rows, each row having a corresponding word line of a plurality of word lines, and a row decoder coupled to the plurality of address lines, the parity line, and the plurality of word lines. The row decoder is configured to selectively activate a selected word line of the plurality of word lines based on the corresponding access address and the corresponding parity bit of a received memory access request. The concept can also be used with parity bits on columns of the memory cells and a column decoder that selects bit lines associated with column address lines.

A repeater for open-drain bus communication and a system including the same is provided. The repeater includes at least one repeating unit having an A-side terminal connected to an A-side open-drain bus, and a B-side terminal electrically connected to a B-side open-drain bus. The repeater has a first mode to receive a signal at the A-side and to produce a signal at the B-side. The repeating unit includes a B-side accelerator element connected to the B-side terminal. The repeating unit when in a first mode includes a first control unit to, control the B-side accelerator element to pull up a voltage at the B-side when the voltage at the A-side surpasses a first threshold voltage during a rising edge of the voltage, and to subsequently control the B-side accelerator element to stop pulling up the voltage at the B-side when the voltage at the B-side surpasses a second threshold voltage.

The present application discloses a dual-port SRAM having two ports. On a layout, pass gates connecting to the two ports are disposed near pull down transistors of corresponding memory nodes. A cell layout structure of the SRAM cell structure is centrosymmetric. In a first subunit layout structure, a pass gate and a first pull down transistor share the same active region, and an active region of the other pull down transistor is disposed between active regions of the first pull down transistor and a first pull up transistor. The present application improves the symmetry of read paths of the two memory nodes from two ports thus the symmetry of read currents, therefore the variation of the electrical performance of PMOS transistors is reduced and the stability of the electrical performance of the PMOS transistors is improved.

Inter-integrated circuit input circuitry includes a pull-up current circuit and an input circuit. The input circuit includes an output inverter, an input inverter, and a pull-up circuit. The pull-up circuit is coupled to an input of the input inverter, and includes a pull-up transistor and a cascode transistor. The pull-up transistor is coupled to the input of the input inverter. The cascode transistor is coupled to the pull-up current circuit and the pull-up transistor, and configured to isolate the pull-up transistor from capacitance of a conductor coupled to the pull-up current circuit and the input circuit.

This application provides an interface circuit of a vehicle-mounted control unit comprising an H-bridge circuit, an input branch, and a pull-up network. An input end of the H-bridge circuit is connected to a controller 240, and an output end of the H-bridge circuit is connected to an interface port IO of the interface circuit. A first end of the input branch is connected to the interface port IO, and a second end of the input branch is connected to the controller.

A system and method for monitoring a code overwrite error of a Redriver chip are disclosed. An analog to digital converter (ADC) monitors whether an EEPROM code of a Redriver chip has been overwritten in error. A Switch chip is utilized to separate the Redriver chip from a system management bus (SMbus) controller. A pull-up resistor keeps an SMbus at a Redriver chip/EEPROM side in a pull-up state. The ADC is utilized to monitor the SMbus. When an abnormal low level is monitored, an alarm signal is sent to the SMbus controller to give a risk alarm for an overwrite error. In addition, according to different ADC sampling rates, an SMbus may also be connected between the SMbus controller and an ADC with a high sampling rate, whereby SMbus data can be monitored.