A signal processing circuit includes a buffer, a first capacitor, a second capacitor, a first switch and a second switch. The buffer includes an input terminal for receiving an external signal and an output terminal for outputting an output signal. The first switch is coupled between the output terminal of the buffer and the first capacitor. The second switch is coupled between the output terminal of the buffer and the second capacitor. The first switch and the second switch are turned on alternately.

An interface circuit includes: a plurality of signal transmitter circuits each receiving an input signal and outputting an output signal responsive to a first power supply voltage based on the input signal; an operation control circuit controlling operation/suspension of the signal transmitter circuits; and an amplitude control circuit exerting control so that the first power supply voltage be greater with increase in the number of operating circuits among the signal transmitter circuits and thereby the amplitude of the output signals of the signal transmitter circuits become greater.

An interface circuit may convert an input electrical signal at an input node in a first power domain having a first ground or reference voltage into an output electrical signal at an output node in a second power domain having a second ground or reference voltage. Notably, a level-shifting circuit in the interface circuit may selectively electrically couple to the input node and the output node. Then, when there is electrical coupling, the level-shifting circuit may perform level shifting between the first power domain and the second power domain. The level shifting may involve: passing, using a first filter, frequencies in the input electrical signal below a first corner frequency; passing, using a second filter in parallel with the first filter, frequencies in the input electrical signal above a second corner frequency; and combining outputs of the first filter and the second filter as the output electrical signal.

A semiconductor device includes a first transistor, a second transistor, and a third transistor. The first transistor includes a first gate insulator, a first source region and a first drain region, a pair of lightly doped drain (LDD) regions that are each shallower than the first source region and the first drain region, and a first gate electrode. The second transistor includes a second gate insulator, a second source region and a second drain region, a pair of drift regions that encompass the second source region and the second drain region respectively, and a second gate electrode, and the third transistor comprises a third gate insulator, a third source region and a third drain region, and a pair of drift regions that encompass the third source and the third drain regions respectively, and a third gate electrode. The second gate insulator is thinner than the other gate insulators.

A class D amplifier circuit receives an analog audio signal with a first reference voltage as its center level, and outputs an output pulse signal having a duty cycle that corresponds to the analog audio signal. A bias circuit generates a second reference voltage having a voltage level obtained as a division of the first reference voltage and the power supply voltage. A periodic voltage generating circuit of the class D amplifier circuit generates a periodic voltage having a triangle waveform or otherwise a sawtooth waveform having an amplitude that corresponds to the second reference voltage.

An output circuit includes a comparator circuit, a voltage conversion circuit and a signal output circuit. The comparator circuit detects an operating mode based on a first supply voltage and a second supply voltage and generates a first control signal. The voltage conversion circuit adjusts a level of an output voltage from a low-dropout regulator according to the first control signal to generate a first voltage, and generates a second voltage according to the first control signal and the first voltage. The signal output circuit adjusts a level of a digital signal according to the first voltage, the second voltage and the first supply voltage to generate a digital output signal corresponding to the operating mode.

A device including an inverter circuit, a hysteresis control circuit, and a high-side input level shifter. The inverter circuit having an output and including at least two series connected PMOS transistors connected, at the output, in series to at least two series connected NMOS transistors. The hysteresis control circuit coupled to the output to provide feedback to the at least two series connected PMOS transistors and to the at least two series connected NMOS transistors. The high-side input level shifter connected to gates of the at least two PMOS transistors and configured to shift a low level of an input signal to a higher level and provide the higher level to one or more of the gates of the at least two PMOS transistors.

The present invention provides a frequency-halving latch circuit for deterministic field bus network data forwarding and application thereof. The frequency-halving latch circuit includes a data buffer equipped with two buffer units; a frequency-halving enable latch signal generation module for generating a first frequency-halving latch signal and a second frequency-halving latch signal with opposite levels, and selecting data buffer units of the data buffer based on the first frequency-halving latch signal, the second frequency-halving latch signal and a receiving enable signal; and a shift register including a first trigger and a second trigger which are initialized to opposite output states, the first trigger and the second trigger is connected to realize a shift operation, and data stored in the data buffer units is finally selected and read based on a low order in the shift register composed of the two triggers and a read enable signal. The frequency-halving latch circuit can be applied to a scenario of deterministic field bus network data forwarding as a same-frequency out-of-phase data cross-clock domain circuit, with high resource utilization rate and stability.

A method for calibrating an isolator product includes receiving a calibration signal on a differential pair of nodes of a receiver signal path of a first integrated circuit die of the isolator product. The method includes generating a diagnostic signal having a level corresponding to an average amplitude of the calibration signal on the differential pair of nodes. The method includes configuring a programmable receiver signal path based on the diagnostic signal. Generating the diagnostic signal may include providing an analog signal based on a full-wave rectified version of the calibration signal on the differential pair of nodes. Generating the diagnostic signal may include converting the analog signal to a digital signal.

Embodiments of the present disclosure provide a level shifter, including: first and second NMOS transistors, wherein the sources of the first and second NMOS transistors are coupled to a first voltage, the gate of the first NMOS transistor is connected to an inverse of an input signal that varies between a second voltage and a third voltage, and wherein the gate of the second NMOS transistor receives a buffer of the input signal. a breakdown protection circuit has third and fourth NMOS transistors, the gates of the third and fourth NMOS transistors being connected to the third voltage, the drain of the first NMOS transistor being connected to the source of the third NMOS transistor, and the drain of the second NMOS transistor being connected to the source of the fourth NMOS transistor. A pull-up circuit is connected to the drains of the third and fourth NMOS transistors.