Mechanisms can be designed to manage non-contact forces to reduce energy consumption and/or to control interactions between the parts. Management of non-contact forces is especially useful in micro-scale and nano-scale mechanisms, where van der Waals attraction between parts of the mechanism may be significant to the operation of the mechanism.

Logic mechanisms operate to define the position of at least one mechanical output based on the position of at least one mechanical input. Some mechanisms are configured to determine, based on the input position(s), whether a path to transmit motion to an output exists or does not exist. Some mechanisms are configured to determine, based on the input position(s), whether or not motion of a driven element can be accommodated without moving an output. Some mechanisms are configured to determine, based on the input position(s), whether or not one or more elements are constrained to transmit motion to an output.

An electronic memory block comprises phase change memory cells for memory storage and further phase change memory cells forming logic gates, to provide in-memory data processing.

An electronic memory block comprises phase change memory cells for memory storage and further phase change memory cells forming logic gates, to provide in-memory data processing.

This application relates to the quantum computer field, and provides a quantum circuit generation method and a related device. The method includes: determining a reference state of a target molecule and N excitations states corresponding to the reference state, where N is a positive integer greater than or equal to 1; determining M excitations states from the N excitations states based on an attribute of the reference state and attributes of the N excitations states, where M is a positive integer greater than or equal to 1 and less than or equal to N; and generating a first quantum circuit based on the M excitations states. The foregoing technical solution can reduce a quantity of excitations states used to generate the first quantum circuit, thereby reducing a depth of the quantum circuit, reducing a quantity of quantum gates and a quantity of layers, improving computation efficiency, and reducing resource consumption.

This application relates to the quantum computer field, and provides a quantum circuit generation method and a related device. The method includes: determining a reference state of a target molecule and N excitations states corresponding to the reference state, where N is a positive integer greater than or equal to 1; determining M excitations states from the N excitations states based on an attribute of the reference state and attributes of the N excitations states, where M is a positive integer greater than or equal to 1 and less than or equal to N; and generating a first quantum circuit based on the M excitations states. The foregoing technical solution can reduce a quantity of excitations states used to generate the first quantum circuit, thereby reducing a depth of the quantum circuit, reducing a quantity of quantum gates and a quantity of layers, improving computation efficiency, and reducing resource consumption.

A memory includes an error detection circuit that identifies a faulty feature in an array of memory cells within the memory. A redundancy enable circuit functions to replace the faulty feature with a redundant feature. The error detection circuit and the redundancy enable circuit function concurrently with a read operation on the array of memory cells.

An electromechanical logic-in-memory device includes a switching unit including a first electrode having a conductive beam and second and third electrodes disposed on both sides of the conductive beam and attracting the conductive beam by electrostatic force, based on an operating voltage applied between the second and third electrodes and the conductive beam, the conductive beam, after being attracted by and adhered to the second or third electrode, maintained to be adhered even when the electrostatic force is removed and a controller determining an operation mode according to types of logic operations included in input data, setting an initial position of the conductive beam by applying the operating voltage to any one of the second and third electrodes, selecting at least one of the first to third electrodes, and applying a predetermined voltage as a true value of a logic value included in the input data.

The invention is based on the integrated application of a thermal-electric active device (phonon transistor). Phonon transistors consist of resistors that respond to temperature changes with a metal-insulator phase transition, or possibly other resistors suitable for heat generation. These resistors are thermally and electrically coupled to each other as needed, and are thermally and electrically insulated from each other. The thermal-electric system built in this way is suitable for the implementation of high-integration logic networks.

The invention is based on the integrated application of a thermal-electric active device (phonon transistor). Phonon transistors consist of resistors that respond to temperature changes with a metal-insulator phase transition, or possibly other resistors suitable for heat generation. These resistors are thermally and electrically coupled to each other as needed, and are thermally and electrically insulated from each other. The thermal-electric system built in this way is suitable for the implementation of high-integration logic networks.