H03K2017/515

Control circuit for switch device, and switch device

A control circuit for a switch device including a first switch element including a movable contact and a drive coil that controls the movable contact of the first switch element, the control circuit for returning the movable contact when the drive coil turns off the movable contact after the drive coil turns on the movable contact during supply of a source voltage from a power source, the control circuit includes a second switch element inserted between a rectifier circuit or a surge absorbing element and the first switch element, the second switch element being turned off when the supply of the source voltage is turned off. The rectifier circuit or the surge absorbing element is connected between the power source and the control circuit. The first switch element is turned off the movable contact is returned by turning off the second switch element to turn off the first switch element.

Radio frequency switching circuit with hot-switching immunity

Apparatus and methods for providing hot-switching immunity for radio frequency switching circuits are disclosed. A radio frequency switching circuit may include both a mechanical switch and a solid-state switch. The mechanical switch may be configurable to couple an output path of a power amplifier to a subsequent component in its transmission path when in a first mechanical switch state and to decouple the output path of the power amplifier from the subsequent component when in a second mechanical switch state. The solid-state switch may be configurable to operatively decouple the mechanical switch from a radio frequency power source when in a first solid-state switch state but not when in a second solid-state switch state. The solid-state switch may be in the first solid-state switch state during transitions of the mechanical switch between the first and second mechanical switch states.

Overcurrent protection power transfer switch
11469587 · 2022-10-11 · ·

The present invention comprises a drive control unit configured such that, when a first power supply (Vin1) is abnormal, an OFF signal is simultaneously applied to the gates of first and second semiconductor switches (Q1, Q2) of a first switching element, and at the same time, an SCR switch of a second switching element and an FET bidirectional switch are turned on in order.

SWITCH DEVICE, CONTROL METHOD OF THE SAME, AND CONTROL METHOD OF TRANSFER SWITCH SYSTEM USING THE SAME
20170359061 · 2017-12-14 ·

A switch device includes first and second switch units that are coupled respectively to first and second output terminals. Each of the first and second switch units includes a plurality of diodes and at least one semiconductor-controlled rectifier (SCR), where at least one of the diodes and one of the at least one SCR cooperatively permit a current to flow therethrough to a corresponding one of the first and second output terminals when each thereof operates in an ON state, and where at least one of the diodes and one of the at least one SCR cooperatively permit a current to flow therethrough from a corresponding one of the first and second output terminals when each thereof operates in an ON state.

CIRCUIT AND DEVICE FOR POWER SWITCHING
20170317526 · 2017-11-02 ·

A power switching device includes a primary power source, a backup power source, and a power switching circuit, and the power switching circuit can switch rapidly between the two or more power sources. The power switching circuit includes a first switching module, a second switching module, and a control module. The first switching module includes first through fourth relays, and first through fourth driving units. The first switching module also includes a first bidirectional thyristor and a second bidirectional thyristor. A power switching circuit is also provided.

SEMICONDUCTOR RELAY DEVICE
20220311436 · 2022-09-29 ·

A semiconductor relay device includes a conversion circuit configured to receive an input signal from outside and pass a first current to a first node based on the input signal. A zener diode has an anode coupled to a second node and a cathode coupled to the first node. A resistor is coupled between the second node and a third node. A number n of diodes are serially coupled. A thyristor has an anode coupled to the first node, a cathode coupled to the second node, and a control terminal coupled to the third node. A transistor has a gate coupled to the first node. An anode of a diode at a first end of the n diodes is coupled to the first node, and a cathode of a diode at a second end of the n diodes is coupled to a third node.

Radio Frequency Switching Circuit With Hot-Switching Immunity

Apparatus and methods for providing hot-switching immunity for radio frequency switching circuits are disclosed. A radio frequency switching circuit may include both a mechanical switch and a solid-state switch. The mechanical switch may be configurable to couple an output path of a power amplifier to a subsequent component in its transmission path when in a first mechanical switch state and to decouple the output path of the power amplifier from the subsequent component when in a second mechanical switch state. The solid-state switch may be configurable to operatively decouple the mechanical switch from a radio frequency power source when in a first solid-state switch state but not when in a second solid-state switch state. The solid-state switch may be in the first solid-state switch state during transitions of the mechanical switch between the first and second mechanical switch states.

SINGLE-POLE DOUBLE-THROW SWITCH CIRCUIT WITH TYPE-C INTERFACE, ANALOG SWITCH CHIP, AND ELECTRONIC DEVICE
20220182053 · 2022-06-09 ·

The present invention provides a single-pole double-throw switch circuit with a Type-C interface, an analog switch chip and an electronic device, which can generate a reverse bias voltage across a first diode, so that a capacitance value of a PN junction can be significantly reduced after the reverse bias voltage is applied to the PN junction. Further, a ground capacitance corresponding to a COM point when the first diode is turned off can be effectively reduced, avoiding the reduction of a bandwidth of a digital path due to excessive capacitance. It can be seen that the present invention can realize a large size of a first field effect transistor and a high bandwidth of the digital path simultaneously, thereby facilitating the simultaneous improvement of the THD performance of an analog audio path and the bandwidth of the digital path, and avoiding conflicts between the two.

Solid-state circuit interrupters
11349296 · 2022-05-31 · ·

A circuit interrupter includes a solid-state switch and a mode control circuit. The solid-state switch is serially connected between a line input terminal and a load output terminal of the circuit interrupter. The mode control circuit is configured to implement a first control mode and a second control mode to control operation of the circuit interrupter. The first control mode is configured to generate a self-bias turn-on threshold voltage for the solid-state switch during power-up of the circuit interrupter, while maintaining the solid-state switch in a switched-off state until the self-bias turn-on threshold voltage is generated. The second control mode is configured to disrupt the self-bias turn-on threshold voltage and place the solid-state switch into a switched-off state.

DC VOLTAGE SWITCH
20220149610 · 2022-05-12 · ·

A DC voltage switch includes a semiconductor-based electronically controllable switching device, a sensor provided upstream of the switching device for determining the DC voltage bus-side voltage level, a sensor provided downstream of the switching device for determining the DC voltage branch-side voltage level, a current sensor for determining current level and direction, a control device designed such that the direction and level of the current are determined, the flow of current is interrupted by the switching device when a first threshold value of the current level is exceeded, and when the first threshold value of the current level is exceeded in the reverse direction: the DC voltage bus-side voltage level is compared with the DC voltage branch-side voltage level, and the switching device is switched on upon a voltage difference being less than a voltage difference value.