An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

An image sensor having a shield including, for example, a metal, is above an electrical charge storage element in a pixel region to block light incident toward the electrical charge storage element, thereby making it possible to reduce or prevent reading a charge value including leakage charge introduced to the electrical charge storage element, and thus adversely affecting an image result.

A photoelectric conversion device including a pixel equipped with a photoelectric conversion circuit configured to output a signal in response to incidence of a photon includes a first measurement circuit, a second measurement circuit, a selection circuit, and a selection circuit. The first measurement circuit is configured to measure the signal output from the pixel. The second measurement circuit is configured to measure time from when the first measurement circuit starts measuring the signal until a measured value measured by the first measurement circuit reaches a first threshold value. The selection circuit is configured to switch a first measurement circuit to be connected to the second measurement circuit among a plurality of first measurement circuit. The control circuit is configured to control timing of switching a connection of the second measurement circuit by the selection circuit.

A photoelectric conversion device including a pixel equipped with a photoelectric conversion circuit configured to output a signal in response to incidence of a photon includes a first measurement circuit, a second measurement circuit, a selection circuit, and a selection circuit. The first measurement circuit is configured to measure the signal output from the pixel. The second measurement circuit is configured to measure time from when the first measurement circuit starts measuring the signal until a measured value measured by the first measurement circuit reaches a first threshold value. The selection circuit is configured to switch a first measurement circuit to be connected to the second measurement circuit among a plurality of first measurement circuit. The control circuit is configured to control timing of switching a connection of the second measurement circuit by the selection circuit.

An optical coherence tomography device includes a light source, a mirror device including a movable mirror configured to perform a reciprocating operation, a support part configured to support an object, a beam splitter configured to generate interfering light, an optical sensor configured to detect the interfering light, and a control unit. Each of the plurality of pixels included in the optical sensor includes a light receiving part, a plurality of transfer gates, and a discharge gate. The control unit applies an electric signal to the optical sensor so that the plurality of transfer gates are sequentially brought into a charge transfer state in at least three time ranges separated from each other and the discharge gate is brought into a charge discharge state in a time range other than the at least three time ranges for each period of an interferogram signal of the interfering light.

A detection device includes a substrate, a plurality of photodiodes arranged on the substrate, a plurality of transistors provided correspondingly to each of the photodiodes, an insulating film that covers the transistors, and a plurality of lower electrodes each of which is provided above the insulating film correspondingly to each of the photodiodes, and is electrically coupled to the transistors. The lower electrodes and the photodiodes are stacked in this order above the insulating film, and one of the lower electrodes and one of the photodiodes are provided so as to overlap the transistors in a plan view from a direction orthogonal to the substrate.

A solid-state imaging device comprising: a pixel array including pixels arranged in a plurality of rows and in a plurality of columns; a first column circuit group; a second column circuit group disposed in the same side with respect to the pixel array as that in which the first column circuit group is disposed; a first counter configured to supply a count signal to the first column circuit group; and a second counter configured to supply a count signal to the second column circuit group, wherein the first column circuit group and the second column circuit group are arranged to be separate from each other in a direction along the columns, wherein the first column circuit group and the second column circuit group are configured to process pixel signals for different colors.

A vehicular interior rearview mirror assembly includes a mirror head having an interior mirror reflective element. The mirror reflective element has a mirror transflector that transmits near-IR light incident thereon, transmits visible light incident thereon and reflects visible light incident thereon. The mirror assembly includes a camera disposed within the mirror head and viewing through the mirror transflector. The camera includes an imaging sensor having a quantum efficiency (QE) of at least 15% for near-infrared (near-IR) light having a wavelength of 940 nm. The mirror assembly further includes first, second and third near-IR illumination sources disposed within the mirror head and operable to emit near-IR light that passes through the mirror transflector. The near-IR illumination sources are at respective angles relative to a planar front surface of the mirror reflective element and, when powered, illuminate respective in-cabin regions for a driver monitoring function or an occupant detection function.

A vehicular interior rearview mirror assembly includes a mirror head having an interior mirror reflective element. The mirror reflective element has a mirror transflector that transmits near-IR light incident thereon, transmits visible light incident thereon and reflects visible light incident thereon. The mirror assembly includes a camera disposed within the mirror head and viewing through the mirror transflector. The camera includes an imaging sensor having a quantum efficiency (QE) of at least 15% for near-infrared (near-IR) light having a wavelength of 940 nm. The mirror assembly further includes first, second and third near-IR illumination sources disposed within the mirror head and operable to emit near-IR light that passes through the mirror transflector. The near-IR illumination sources are at respective angles relative to a planar front surface of the mirror reflective element and, when powered, illuminate respective in-cabin regions for a driver monitoring function or an occupant detection function.

An image sensor includes a pixel array and a readout circuit. The pixel array includes a first unit pixel region including first, second and third sub-pixel regions having a first color filter, sequentially disposed along a first row line, and sharing a first floating diffusion region, and a second unit pixel region including a first, second and third sub-pixel regions having a second color filter, sequentially disposed along a second row line, and sharing a second floating diffusion region. The readout circuit includes a first analog-digital converter receiving a first pixel signal from the first unit pixel region through a first pixel signal output line and converting the first pixel signal into digital data, and a second analog-digital converter receiving a second pixel signal from the second unit pixel region through a second pixel signal output line and converting the second pixel signal into digital data, wherein at least one of the first unit pixel region and the second unit pixel region further includes a phase detection pixel region.