An image capturing apparatus generates an image of a high dynamic range that takes into account gain in addition to a range of change of storage capacitance. The image capturing apparatus having an image capturing device of a structure in which blocks each configured by a plurality of photoelectric conversion elements are arranged, includes a first control circuit, a second control circuit, and a generating circuit. The first control circuit is configured to control sensitivity in units of the blocks. The second control circuit is configured to control a gain of a signal for each block obtained by the image capturing device. The generating circuit is configured to, by mapping image data of blocks obtained under the control of the second control circuit to a region that accords with sensitivity set for the blocks in a preset high dynamic range, generate image data of the high dynamic range.

Disclosed is an image sensor including: a center pixel group including 2x2 pixels having different colors in a center area of a 6x6 unit pixel group; and first to fourth color pixel groups having the same color as one pixel of the center pixel group, disposed as units of 2x4 pixels or 4x2 pixels to have a shape surrounding the center pixel group, and having different colors.

An image sensing device includes a photoelectric element configured to generate an electric charge in response to light; first and second floating diffusions configured to store the electric charge; a transfer gate having a first end connected to the photoelectric element and a second end connected to the first floating diffusion; a reset transistor configured to reset voltages of the first and second floating diffusions based on a reset signal; a first dual conversion gain (DCG) transistor having a first end connected to the first floating diffusion and a second end connected to the second floating diffusion; first and second pixel circuits configured to generate first and second output voltages based on the first and second floating diffusions; and first and second analog to digital converters configured to receive the first and second output voltages and convert them to first and second digital signals.

A photoelectric conversion device including pixels arranged to form rows, a scanning circuit that performs scanning for sequentially outputting a signal from the pixel on a row basis, and a processing circuit that processes a signal output from the pixel. The processing circuit corrects, based on a first reset signal and a second reset signal based on a reset state of the pixel, an optical signal based on incident light. The scanning circuit performs scanning for outputting the optical signal and the first reset signal from the pixel by scans performed in different periods. The scanning circuit performs scanning for outputting the optical signal and the second reset signal from the pixel by a scan. The first reset signal, the second reset signal, and the optical signal are output from the pixel in a frame period in which signals to be used for generating a frame is output.

An apparatus including a sensor for setting an exposure time or gain for each of pixel groups including at least one pixel includes an imaging unit including the sensor configured to capture a subject through an optical system to generate an image, an acquisition unit configured to acquire information about a specific image region in the generated image, a determination unit configured to determine a specific pixel region including at least one pixel group in the sensor and corresponding to the specific image region, based on the information about the specific image region, a change unit configured to change at least one of a number, a size, and a shape of pixel groups in the specific pixel region determined by the determination unit, and a control unit configured to control the exposure time or gain for each of the pixel groups.

An image sensing device includes a pixel array of a plurality of unit pixels arranged in a row direction and a column direction and including a first unit pixel that includes floating diffusion region configured to store photocharge generated within the first unit pixel in corresponding to incident light; a first gain conversion transistor connected to the first floating diffusion region; a first row booster block connected to the first gain conversion transistor and a second gain conversion transistor that is included in a second unit pixel adjacent to the first unit pixel in the row direction; and a first column booster block connected to the first gain conversion transistor and a third gain conversion transistor that is included in a third unit pixel adjacent to the first unit pixel in the column direction.

An image sensor includes a pixel array in which a plurality of pixels are arranged. Each of the plurality of pixels includes an organic photodiode of which a sensitivity is adjusted based on an external voltage, a silicon photodiode, first and second floating diffusion nodes, a conversion gain transistor, and a driving transistor. Charges generated by the silicon photodiode are accumulated in the first floating diffusion node. Charges generated by the organic photodiode are accumulated in the second floating diffusion node. One end of the conversion gain transistor is connected to the first floating diffusion node and the other end connected is connected to the second floating diffusion node. The driving transistor is configured to generate a pixel signal corresponding to a voltage of the first floating diffusion node.

The present disclosure provides a time delay integration (TDI) sensor using a rolling shutter. The TDI sensor includes multiple pixel columns. Each pixel column includes multiple pixels arranged in an along-track direction, wherein two adjacent pixels or two adjacent pixel groups in every pixel column have a separation space therebetween. The separation space is equal to a pixel height multiplied by a time ratio of a line time difference of the rolling shutter and a frame period, or equal to a summation of at least one pixel height and a multiplication of the pixel height by the time ratio of the line time difference and the frame period. The TDI sensor further generates pixel data amplified by different gains for a processor to perform the image combination.

The present disclosure provides a time delay integration (TDI) sensor using a rolling shutter. The TDI sensor includes multiple pixel columns. Each pixel column includes multiple pixels arranged in an along-track direction, wherein two adjacent pixels or two adjacent pixel groups in every pixel column have a separation space therebetween. The separation space is equal to a pixel height multiplied by a time ratio of a line time difference of the rolling shutter and a frame period, or equal to a summation of at least one pixel height and a multiplication of the pixel height by the time ratio of the line time difference and the frame period. The TDI sensor further generates pixel data amplified by different gains for a processor to perform the image combination.

Provided is a photoelectric sensor, a random accessible active pixel circuit, an image sensor and a camera. A photoelectric sensor comprises a doped region, a substrate, a doped source region, a doped drain region, and two isolation regions; wherein the doped region is arranged on a bottom surface of the substrate so as to form a photodiode; a cathode of the photodiode is formed in the doped region and is connected to a positive voltage to make the photodiode work in a reverse bias region; wherein the doped source region and the doped drain region are spaced apart on top of the substrate so as to form a field effect transistor; a source is formed on a top surface of the doped source region, and a drain is formed on the top surface of the doped drain region; wherein the two isolation regions are arranged on opposite sides of the substrate, and extend from the doped source region and the doped drain region to the doped region; wherein a gate dielectric layer and a gate between the doped source region and the doped drain region are configured sequentially upwards from the top surface of the substrate; the gate is connected to a voltage to make the field effect transistor select wide dynamic range mode or high gain mode.