Patent classifications
H04N25/53
CONE-ROD DUAL-MODALITY NEUROMORPHIC VISION SENSOR
Embodiments of the present disclosure provide a cone-rod dual-modality neuromorphic vision sensor, including: a first preset quantity of voltage-mode active pixel sensor (APS) circuits and a second preset quantity of current-mode APS circuits, where each of the voltage-mode APS circuits includes a first-type photosensitive device, and each of the current-mode APS circuits includes a second-type photosensitive device. The voltage-mode APS can output a target voltage signal representing light intensity information in a target light signal. The obtained target voltage signal represents the light intensity information with a higher precision, and therefore an image with higher quality can be obtained, that is, the image has a higher signal-noise ratio. The voltage-mode APS can output a specified digital signal representing light intensity gradient information in the target light signal, to ensure performance indicators such as an image dynamic range and a shooting speed of the neuromorphic vision sensor, thereby making the neuromorphic vision sensor more stable and robust.
SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE
A solid-state imaging device according to an embodiment includes a photoelectric conversion unit, a charge transfer unit configured to transfer a charge accumulated in the photoelectric conversion unit, a first charge modulation unit to which the charge is transferred from the photoelectric conversion unit by the charge transfer unit, a second charge modulation unit, a charge accumulation unit configured to accumulate a charge overflowing from the photoelectric conversion unit during an accumulation period, a modulation switching unit configured to couple or divide the first charge modulation unit and the second charge modulation unit, and a capacitance connection unit configured to couple or divide the second charge modulation unit and the charge accumulation unit, in which, in a state of the first charge modulation unit alone and a state where the first charge modulation unit and the second charge modulation unit are coupled by the modulation switching unit, the charge accumulated in the photoelectric conversion unit is modulated into a voltage signal, and voltage signals having different conversion efficiencies are continuously read, and the charge accumulated in the photoelectric conversion unit and the charge overflowing from the photoelectric conversion unit during the accumulation period are modulated into a voltage signal and the voltage signal is read in a capacitance obtained by coupling the first charge modulation unit, the second charge modulation unit, and the charge accumulation unit.
NON-UNIFORMITY CORRECTION CALIBRATIONS IN INFRARED IMAGING SYSTEMS AND METHODS
Techniques for facilitating non-uniformity correction calibrations are provided. In one example, an infrared imaging system includes an infrared imager and a logic device. The infrared imager is configured to capture a first set of infrared images of a reference object using a first integration time. The infrared imager is further configured to capture a second set of infrared images of the reference object using a second integration time different from the first integration time. The logic device is configured to determine a dark current correction map based on the second set of infrared images. The logic device is further configured to generate a non-uniformity correction map based on the dark current correction map. Related devices and methods are also provided.
Event image sensor, imaging device, and method of controlling event image sensor
In a solid-state image sensor that detects an address event, the detection sensitivity for the address event is controlled to an appropriate value. The solid-state image sensor includes a pixel array unit and a control unit. In the solid-state image sensor, multiple pixel circuits are arranged in the pixel array unit, each detecting a change in luminance of incident light occurring outside a predetermined dead band as the address event. The control unit controls the width of the dead band according to the number of times the address event is detected in the pixel array unit within a fixed unit cycle.
Pulse-Width Modulation Pixel Sensor
A pulse-width modulation (PWM) image sensor is described herein. The PWM image sensor may have a stacked configuration. A top wafer of the PWM image sensor may have a charge-to-time converter and a logic wafer, stacked with the top wafer, may include a time-to-digital converter. The PWM image sensor may utilize variable transfer functions to avoid highlight compression and may utilize non-linear time quantization. A threshold voltage, as input to a charge-to-time converter, may additionally be controlled to affect light detection, dynamic range, and other features associated with the PWM image sensor.
Imaging Method and System Based on Wise-pixels with Valved Modulation
This disclosure presents a novel smart CMOS imaging sensor and the methods and system for imaging of an object using the smart CMOS imaging sensor. A CMOS-implemented 3D imaging system compromises a wise-pixels-containing imaging sensor and a scanning light point or beam to achieve 3D shape reconstruction, by recording performance of each wise-pixel to the incident light over the period of “valve modulation”. The “valve modulation” is a one-time process of accumulation and release of charges. A frame period comprises multiple valve modulations. In the “frame period”, each wise-pixel will repeat the process that temporarily stores the light intensity, and then release, along with a selection of preferred intensity (e.g. the globally maximum intensity, or the locally maximum intensities, and or the intensities above a certain threshold) during the whole frame period, and the selected intensity and the corresponding time will be exported to the computing units. The selection of the different preferred light intensities is implemented by memory-based, threshold-based, and difference-based approaches, respectively. The obtained maximum intensity and time information can be used to reconstruct 3D geometric information of the surface of the object scanned by moving light source.
Global shutter image sensor
In one example, an apparatus is provided. The apparatus includes a photodiode, a charge sensing unit, an analog-to-digital converter (ADC), and a controller. The controller is configured to: enable the photodiode to generate charge in response to incident light, accumulate at least a portion of the charge as residual charge until the photodiode becomes saturated by the residual charge, and transfer the remaining portion of the charge to the charge sensing unit as overflow charge if the photodiode becomes saturated by the residual charge. The controller is further configured to: generate, using the ADC, a first digital output based on the residual charge; after generating the first digital output, generate, using the ADC, a second digital output based on the overflow charge; and generate a digital representation of an intensity of the incident light based on at least one of the first digital output or the second digital output.
Pixel array and image sensor including the same
Provided are a pixel array and an image sensor including the same. The pixel array includes a plurality of sub-pixels adjacent to each other and a readout circuit connected to the plurality of sub-pixels through a floating diffusion node. Each of the sub-pixels includes a photoelectric conversion element, an overflow transistor connected to the photoelectric conversion element, a phototransistor connected to the photoelectric conversion element and the overflow transistor, and a storage element connected to the phototransistor.
Pixel array and image sensor including the same
Provided are a pixel array and an image sensor including the same. The pixel array includes a plurality of sub-pixels adjacent to each other and a readout circuit connected to the plurality of sub-pixels through a floating diffusion node. Each of the sub-pixels includes a photoelectric conversion element, an overflow transistor connected to the photoelectric conversion element, a phototransistor connected to the photoelectric conversion element and the overflow transistor, and a storage element connected to the phototransistor.
Solid-state imaging device
A solid-state imaging device includes: a plurality of pixel cells arranged in a matrix. In the solid-state imaging device, each of the plurality of pixel cells includes: a photoelectric converter that generates charge by photoelectric conversion, and holds a potential according to an amount of the charge generated; an initializer that initializes the potential of the photoelectric converter; a comparison section that compares the potential of the photoelectric converter and a predetermined reference signal, and causes the initializer to perform initialization when the potential of the photoelectric converter and the predetermined reference signal match; and a counter that counts a total number of times of initialization performed by the initializer, and outputs a signal corresponding to the total number of times as a first signal indicating an intensity of incident light.