A dynamic vision sensor may include a pixel array including at least a first photoreceptor and a second photoreceptor, the first photoreceptor and the second photoreceptor including at least one first pixel and at least one second pixel, respectively, the at least one first pixel and the at least one second pixel configured to generate at least one first photocurrent and at least one second photocurrent in response to an incident light, respectively, and the first photoreceptor and the second photoreceptor configured to a first and second log voltages based on the at least one first photocurrent and the at least one second photocurrent, respectively, processing circuitry configured to, amplify the first and second log voltages, detect a change in intensity of the light based on the amplified first log voltage, the amplified second log voltage, and a reference voltage, and output an event signal corresponding to the detected value.

A CMOS image sensor with an imaging array of pixels containing selected pixels wherein illumination is blocked and light scattered from an adjacent pixel is collected. The signal from the selected pixels is resilient against saturation and thereby contributes to increased dynamic range of the imaging signal. The image sensor may be incorporated within a digital camera.

A CMOS image sensor with an imaging array of pixels containing selected pixels wherein illumination is blocked and light scattered from an adjacent pixel is collected. The signal from the selected pixels is resilient against saturation and thereby contributes to increased dynamic range of the imaging signal. The image sensor may be incorporated within a digital camera.

An imaging device includes a pixel region in which a plurality of pixels, each including a photoelectric converter, are arranged, including an effective pixel region, an optical black region covered with a light-shielding film, and a dummy pixel region arranged between the effective pixel region and the optical black region. The pixels arranged in at least the effective pixel region and the optical black region among the plurality of the pixels each include an optical waveguide arranged above the photoelectric converter. The pixels including the optical waveguides are arranged between the effective pixel region and the optical black region so as to be spaced apart from each other by at least a one-pixel pitch.

The present technology relates to a solid-state imaging device and an electronic device capable of improving a saturation characteristic. A photo diode is formed on a substrate, and a floating diffusion accumulates a signal charge read from the photo diode. A plurality of vertical gate electrodes is formed from a surface of the substrate in a depth direction in a region between the photo diode and the floating diffusion, and an overflow path is formed in a region interposed between a plurality of vertical gate electrodes. The present technology may be applied to a CMOS image sensor.

[Object] To provide a sensor device, sensing method, and information processing device, capable of executing more flexible measurement for visualizing the movement of an object. [Solution] The sensor device includes: a sensor unit configured to sense information relating to an object; an attachment portion configured to detachably attached to any of one or more attachment positions provided on the object; and an acquisition unit configured to acquire information indicating the attachment position to which the attachment portion is attached.

An image processing device is disclosed. The image processing device includes at least one first pixel having a first sensitivity, a second pixel having a second sensitivity different from the first sensitivity, a processor, and a synthesizer. The processor calculates a sampling position of the at least one first pixel and a sampling position of the second pixel, determines a reference position and adjusts the sampling position of the at least one first pixel or the second pixel based on the reference position.

An image processing device is disclosed. The image processing device includes at least one first pixel having a first sensitivity, a second pixel having a second sensitivity different from the first sensitivity, a processor, and a synthesizer. The processor calculates a sampling position of the at least one first pixel and a sampling position of the second pixel, determines a reference position and adjusts the sampling position of the at least one first pixel or the second pixel based on the reference position.

First and second readout circuits, each having a respective floating diffusion node, are coupled to a photodetection element within a pixel of an integrated-circuit image sensor. Following an exposure interval in which photocharge is accumulated within the photodetection element, a first portion of the accumulated photocharge is transferred from the photodetection element to the first floating diffusion node to enable generation of a first output signal within the first readout circuit, and a second portion of the accumulated photocharge is transferred from the photodetection element to the second floating diffusion node to enable generation of a second output signal within the second readout circuit. A digital pixel value is generated based on the first and second output signals.

First and second readout circuits, each having a respective floating diffusion node, are coupled to a photodetection element within a pixel of an integrated-circuit image sensor. Following an exposure interval in which photocharge is accumulated within the photodetection element, a first portion of the accumulated photocharge is transferred from the photodetection element to the first floating diffusion node to enable generation of a first output signal within the first readout circuit, and a second portion of the accumulated photocharge is transferred from the photodetection element to the second floating diffusion node to enable generation of a second output signal within the second readout circuit. A digital pixel value is generated based on the first and second output signals.