According to certain embodiments, an image sensor including a pixel, the pixel including a micro lens, a plurality of photodiodes, and a color filter disposed between the plurality of photodiodes and the micro lens; a processor operatively connected to the image sensor; and a memory operatively connected to the processor, wherein the memory stores one or more instructions that, when executed by the image sensor, cause the image sensor to perform a plurality of operations, the plurality of operations comprising: determining whether the image sensor is in a high-resolution mode; when the image sensor is in the high-resolution mode, calculating a disparity based on signals detected from the plurality of photodiodes; when the disparity is not greater than a threshold value, applying a first remosaic algorithm to the signals; and when the disparity is greater than the threshold value, applying a second remosaic algorithm to the signals.

The present technology relates to an imaging apparatus and electronic equipment that can reduce noise. A photoelectric conversion element, a conversion unit that converts a signal from the photoelectric conversion element into a digital signal, a bias circuit that supplies a bias current for controlling a current flowing through an analog circuit in the conversion unit, and a control unit that controls the bias circuit on the basis of an output signal from the conversion unit are provided, and at the start of transfer of a charge from the photoelectric conversion element, the control unit boosts a voltage at a predetermined position of the analog circuit. The conversion unit converts the signal from the photoelectric conversion element into a digital signal using a slope signal whose level monotonously decreases with time. The present technology is applicable to, for example, an imaging apparatus.

The present technology relates to an imaging apparatus and electronic equipment that can reduce noise. A photoelectric conversion element, a conversion unit that converts a signal from the photoelectric conversion element into a digital signal, a bias circuit that supplies a bias current for controlling a current flowing through an analog circuit in the conversion unit, and a control unit that controls the bias circuit on the basis of an output signal from the conversion unit are provided, and at the start of transfer of a charge from the photoelectric conversion element, the control unit boosts a voltage at a predetermined position of the analog circuit. The conversion unit converts the signal from the photoelectric conversion element into a digital signal using a slope signal whose level monotonously decreases with time. The present technology is applicable to, for example, an imaging apparatus.

Techniques for facilitating readout addressing verification systems and methods are provided. In one example, an imaging device includes a focal plane array (FPA). The FPA includes a detector array. The detector array includes detectors. Each detector is configured to detect electromagnetic radiation. The FPA further includes a readout circuit configured to perform a readout to obtain image data from each of the detectors. The imaging device further includes a processing circuit. The processing circuit is configured to apply, to the FPA, a plurality of control signals associated with a readout of a subset of the detectors. The processing circuit is further configured to generate a verification value based on the plurality of control signals. The processing circuit is further configured to perform a verification of the plurality of control signals based at least on the verification value. Related methods and systems are also provided.

Distance measurement accuracy is improved while an increase in power consumption is suppressed. A solid-state imaging device includes a first pixel (210) that detects an address event based on incident light, and a second pixel (310) that generates information on a distance to an object based on the incident light. The second pixel generates the information on the distance to the object when the first pixel detects the address event.

The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.

An analog-to-digital converter includes a generator, a comparator, and a counter. The generator generates a reference signal whose voltage changes with respect to time. The voltage of the reference signal changes with a constant slope in a predetermined first period since the voltage starts changing. The slope of the voltage becomes steeper with respect to time in a second period after the first period. The comparator compares the reference signal and a voltage output from outside, and outputs a comparison result. The counter counts at a predetermined first cycle since the voltage of the reference signal starts changing until the comparison result is inverted.

Systems and methods for thermal radiation detection utilizing a thermal radiation detection system are provided. The thermal radiation detection system includes one or more mercury-cadmium-telluride (HgCdTe)-based photodiode infrared detectors or Indium Antimonide (InSb)-based photodiode infrared detectors and a temperature sensing circuit. The temperature sensing circuit is configured to generate signals correlated to the temperatures of one or more of the plurality of infrared sensor elements. The thermal radiation detection system also includes a signal processing circuit.

A photoelectric conversion apparatus includes a pixel array having pixels arranged to form rows and columns and column signal lines configured to output noise signals and optical signals of the pixels, a driver configured to drive the pixels so that the optical signal is output following the noise signal from each pixel, A/D converters configured to perform A/D conversion to convert the noise signals output to the column signal lines into noise data and to subsequently perform A/D conversion to covert the optical signals output to the column signal lines into optical data, a data hold circuit, and a transmitter configured to transmit the noise data converted by the A/D converters to the data hold circuit and to subsequently transmit the optical data converted by the A/D converters to the data hold circuit.

A photoelectric conversion apparatus includes a pixel array having pixels arranged to form rows and columns and column signal lines configured to output noise signals and optical signals of the pixels, a driver configured to drive the pixels so that the optical signal is output following the noise signal from each pixel, A/D converters configured to perform A/D conversion to convert the noise signals output to the column signal lines into noise data and to subsequently perform A/D conversion to covert the optical signals output to the column signal lines into optical data, a data hold circuit, and a transmitter configured to transmit the noise data converted by the A/D converters to the data hold circuit and to subsequently transmit the optical data converted by the A/D converters to the data hold circuit.