An imaging device according to an embodiment includes: a plurality of pixels (110) each including a photoelectric conversion element (20) and arranged in an array of matrix; a control line group (16) including a plurality of control lines for controlling each of pixels aligned in a row direction, each arranged in each of rows of the array; and a plurality of reading lines (VSL) arranged in each of columns for transferring a pixel signal read from each of pixels aligned in a column direction of the array, wherein the plurality of pixels includes: a first pixel (110GS) controlled by a control signal supplied from a first control line group including control lines in a first number among a plurality of control lines included in the control line group in each of pixels aligned in the row direction in at least one of rows of the array; and a second pixel (110RS) controlled by a control signal supplied from a second control line group including a control line in a second number smaller than the first number among a plurality of control lines included in the control line group.

The present invention relates to a delta image sensor comprising an arrangement of pixels and a plurality of acquisition circuits corresponding to at least one pixel and formed as part of an integrated circuit. Each acquisition circuit includes at least one sensor circuit comprising a photosensor configured to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor of the at least one pixel; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output under the condition of the changed level. The sensor circuit is configured to change an analogue function of its read-out characteristics to generate a respective changed VSIG.

The present invention relates to a delta image sensor comprising an arrangement of pixels and a plurality of acquisition circuits corresponding to at least one pixel and formed as part of an integrated circuit. Each acquisition circuit includes at least one sensor circuit comprising a photosensor configured to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor of the at least one pixel; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output under the condition of the changed level. The sensor circuit is configured to change an analogue function of its read-out characteristics to generate a respective changed VSIG.

Proposed are an organic-inorganic composite synthetic resin using a highly flame-retardant organically modified nanoparticle, and a production method thereof. The method for producing the organic-inorganic composite synthetic resin using a highly flame-retardant organically modified nanoparticle includes the steps of: adding and stirring metal ion-based phosphinate, melamine cyanurate, and nanoclay to a container containing an aqueous or oily solvent, applying ultrasonic waves and high pressure energy to the stirred solution to prepare a highly flame-retardant organically modified silicate solution through a chemical bonding, and then adding a synthetic resin to form synthetic leather and foam used as life consumer goods to the silicate solution, processing and drying it.

An image sensing device may include a plurality of test pixel blocks and a signal processing unit. The test pixel blocks may be simultaneously heated to different temperatures. The signal processing unit may be in communication with the test blocks and configured to obtain pixel signals for different colors, respectively, based on dark current information associated with the temperatures of the test pixel blocks.

A solid-state imaging device includes: pixels; a first sample-and-hold circuit provided per column and generating a first differential voltage that is a difference between a first reset voltage and a first signal voltage output from a first pixel disposed in a corresponding column among the pixels; a second sample-and-hold circuit provided per column and generating a second differential voltage that is a difference between a second reset voltage and a second signal voltage output from a second pixel disposed in the corresponding column among the pixels and different from the first pixel; and an A/D conversion circuit provided per column and converting, into digital signals, a first voltage based on the first differential voltage output from the first sample-and-hold circuit disposed in the corresponding column and a second voltage based on the second differential voltage output from the second sample-and-hold circuit disposed in the corresponding column.

A solid-state imaging device includes: pixels; a first sample-and-hold circuit provided per column and generating a first differential voltage that is a difference between a first reset voltage and a first signal voltage output from a first pixel disposed in a corresponding column among the pixels; a second sample-and-hold circuit provided per column and generating a second differential voltage that is a difference between a second reset voltage and a second signal voltage output from a second pixel disposed in the corresponding column among the pixels and different from the first pixel; and an A/D conversion circuit provided per column and converting, into digital signals, a first voltage based on the first differential voltage output from the first sample-and-hold circuit disposed in the corresponding column and a second voltage based on the second differential voltage output from the second sample-and-hold circuit disposed in the corresponding column.

In a solid-state imaging element that compares a reference signal and a pixel signal with each other, a frame rate is improved.

A differential amplifier circuit amplifies a difference in potential between a pair of input nodes and outputs the difference from an output node. A transfer transistor transfers charge from a photoelectric conversion element to a floating diffusion layer. A gate of a source follower transistor is connected to the floating diffusion layer, and a source thereof is connected to one of the pair of input nodes. A measurement unit measures a gate-source voltage of the source follower transistor and supplies a measured value. A correction arithmetic unit arithmetically calculates a correction value for correcting a potential of the other one of the pair of input nodes based on the measured value.

In a solid-state imaging element that compares a reference signal and a pixel signal with each other, a frame rate is improved.

A differential amplifier circuit amplifies a difference in potential between a pair of input nodes and outputs the difference from an output node. A transfer transistor transfers charge from a photoelectric conversion element to a floating diffusion layer. A gate of a source follower transistor is connected to the floating diffusion layer, and a source thereof is connected to one of the pair of input nodes. A measurement unit measures a gate-source voltage of the source follower transistor and supplies a measured value. A correction arithmetic unit arithmetically calculates a correction value for correcting a potential of the other one of the pair of input nodes based on the measured value.

A pixel array, an image sensor, and a self-checking method of the image sensor are provided. The pixel array includes a photosensitive pixel region, a first reference pixel region and/or a second reference pixel region; the photosensitive pixel region includes M rows and N columns of pixels arranged in an array; the first reference pixel region includes n columns of first reference pixels disposed corresponding to N columns of pixels of the photosensitive pixel region; the second reference pixel region includes m rows of the second reference pixels disposed corresponding to the M rows of pixels of the photosensitive pixel region. The first reference pixel region and/or the second reference pixel region can be used to implement a real-time self-checking function of the readout circuit and/or the control circuit in the image sensor, check in real time whether the image signal output by the image sensor is correct.