An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

Indirect time-of-flight (i-ToF) image sensor pixels, i-ToF image sensors including such pixels, stereo cameras including such image sensors, and sensing methods to obtain i-ToF detection and phase detection information using such image sensors and stereo cameras. An i-ToF image sensor pixel may comprise a plurality of sub-pixels, each sub-pixel including a photodiode, a single microlens covering the plurality of sub-pixels and a read-out circuit for extracting i-ToF phase signals of each sub-pixel individually.

Indirect time-of-flight (i-ToF) image sensor pixels, i-ToF image sensors including such pixels, stereo cameras including such image sensors, and sensing methods to obtain i-ToF detection and phase detection information using such image sensors and stereo cameras. An i-ToF image sensor pixel may comprise a plurality of sub-pixels, each sub-pixel including a photodiode, a single microlens covering the plurality of sub-pixels and a read-out circuit for extracting i-ToF phase signals of each sub-pixel individually.

Provided is a 3D depth sensing system and method of providing an image based on a hybrid sensing array. The 3D sensing system including a light source configured to emit light, a hybrid sensing array comprising a 2D sensing region configured to detect ambient light reflected from an object and a 3D depth sensing region configured to detect the light emitted by the light source and reflected from the object, a metalens on the hybrid sensing array, the metalens being configured to direct the ambient light reflected from the object towards the 2D sensing region, and to direct the light emitted by the light source and reflected from the object towards the 3D depth sensing region, and a processing circuit configured to combine 2D image information provided by the 2D sensing region and 3D information provided by the 3D depth sensing region to generate a combined 3D image.

Provided is a 3D depth sensing system and method of providing an image based on a hybrid sensing array. The 3D sensing system including a light source configured to emit light, a hybrid sensing array comprising a 2D sensing region configured to detect ambient light reflected from an object and a 3D depth sensing region configured to detect the light emitted by the light source and reflected from the object, a metalens on the hybrid sensing array, the metalens being configured to direct the ambient light reflected from the object towards the 2D sensing region, and to direct the light emitted by the light source and reflected from the object towards the 3D depth sensing region, and a processing circuit configured to combine 2D image information provided by the 2D sensing region and 3D information provided by the 3D depth sensing region to generate a combined 3D image.

The present disclosure provides an imaging device capable of outputting a signal other than an event detection signal, such as a pixel signal at a gradation level. The imaging device has a stacked chip structure formed by stacking at least two semiconductor chips including a first-layer semiconductor chip and a second-layer semiconductor chip. The first-layer semiconductor chip has a pixel array unit in which an event pixel that outputs an event detection signal, and a distance measurement pixel are mixed. The second-layer semiconductor chip is provided with an analog front-end unit for an event pixel that processes the event detection signal and with an analog front-end unit for a distance measurement pixel that processes the signal from the light-receiving element, corresponding to each of the event pixel and the distance measurement pixel.

Apparatus for optical sensing includes first matrix of optical sensing elements, arranged on a semiconductor substrate in rows and columns. A second matrix of storage nodes is arranged on the substrate such that respective first and second storage nodes in the second matrix are disposed in proximity to each of the sensing elements within the first matrix. Switching circuitry couples each of the sensing elements to transfer photocharge to the respective first and second storage nodes. Control circuitry controls the switching circuitry in a depth sensing mode such that over a series of detection cycles, each of the sensing elements and a first neighboring sensing element are connected together to the respective first storage node during the first detection interval, and each of the sensing elements and the second neighboring sensing element are connected together to the respective second storage node during the second detection interval.

Provided is an image sensing apparatus including an image sensor including a pixel array configured to output a raw image having a Bayer pattern, and an analog end configured to perform an analog binning process on groups of pixels of same colors included in same columns of each of a plurality of sub-kernels corresponding to a first green pixel, a red pixel, a blue pixel, and a second green pixel, and output median values for different colors, and a digital signal processor configured to perform a digital binning process on the median values for the different colors included in different columns of each of the plurality of sub-kernels, and output a binned image.

Provided is an image sensing apparatus including an image sensor including a pixel array configured to output a raw image having a Bayer pattern, and an analog end configured to perform an analog binning process on groups of pixels of same colors included in same columns of each of a plurality of sub-kernels corresponding to a first green pixel, a red pixel, a blue pixel, and a second green pixel, and output median values for different colors, and a digital signal processor configured to perform a digital binning process on the median values for the different colors included in different columns of each of the plurality of sub-kernels, and output a binned image.