A testing system for testing an image sensor, includes a probe card, a pogo block receiving output signals of the probe card, an interface board configured to receive output signals of the pogo block, convert the received output signals of the pogo block, and output the converted signals through a cable, and a testing apparatus connected to the interface board through the cable. The testing apparatus is configured to test the device under test through signals received through the cable. The interface board includes an active interface module configured to amplify the received output signals of the pogo block, convert the amplified signals into signals having a same frequency as the received output signals of the pogo block, and transmit the converted signals to the cable.

According to one embodiment, an optical sensor device includes an insulating substrate, a first conductive layer and an optical sensor element disposed between the insulating substrate and the first conductive layer. The optical sensor element is electrically connected to the first conductive layer and covered by the first conductive layer. The optical sensor element includes a first semiconductor layer formed of an oxide semiconductor and controls an amount of charge flowing to the first conductive layer according to an amount of incident light to the first semiconductor layer.

A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.

The present technology relates to an imaging apparatus and electronic equipment that can reduce noise. A photoelectric conversion element, a conversion unit that converts a signal from the photoelectric conversion element into a digital signal, a bias circuit that supplies a bias current for controlling a current flowing through an analog circuit in the conversion unit, and a control unit that controls the bias circuit on the basis of an output signal from the conversion unit are provided, and at the start of transfer of a charge from the photoelectric conversion element, the control unit boosts a voltage at a predetermined position of the analog circuit. The conversion unit converts the signal from the photoelectric conversion element into a digital signal using a slope signal whose level monotonously decreases with time. The present technology is applicable to, for example, an imaging apparatus.

The present technology relates to an imaging apparatus and electronic equipment that can reduce noise. A photoelectric conversion element, a conversion unit that converts a signal from the photoelectric conversion element into a digital signal, a bias circuit that supplies a bias current for controlling a current flowing through an analog circuit in the conversion unit, and a control unit that controls the bias circuit on the basis of an output signal from the conversion unit are provided, and at the start of transfer of a charge from the photoelectric conversion element, the control unit boosts a voltage at a predetermined position of the analog circuit. The conversion unit converts the signal from the photoelectric conversion element into a digital signal using a slope signal whose level monotonously decreases with time. The present technology is applicable to, for example, an imaging apparatus.

An image sensor includes a pixel with a photosensitive region accommodated within a semiconductor substrate and a MOS capacitive element with a conducting electrode electrically isolated by a dielectric layer. The dielectric layer forms an interface with both the photosensitive region and the semiconductor substrate, the interface of the dielectric layer including charge traps. A control circuit biases the electrode of the MOS capacitive element with a charge pumping signal designed to generate an alternation of successive inversion regimes and accumulation regimes in the photosensitive region. The charge pumping signal produces recombinations of photogenerated charges in the charge traps of the interface of the dielectric layer and the generation of a substrate current to empty recombined photogenerated charges.

A method, apparatus and system are described providing a high dynamic range pixel. An integration period has multiple sub-integration periods during which charges are accumulated in a photosensor and repeatedly transferred to a storage node, where the charges are accumulated for later transfer to another storage node for output.

The present disclosure provides an organic compound represented by general formula [1] below. ##STR00001## In formula [1], Ar.sub.1 and Ar.sub.2 each represent an alkyl group having 1 to 8 carbon atoms, an aromatic hydrocarbon group having 6 to 18 carbon atoms, or a heteroaromatic group having 3 to 17 carbon atoms. Ar.sub.1 and Ar.sub.2 may be the same or different. Ar.sub.3 and Ar.sub.4 are each a substituent having a carbazolyl group. Ar.sub.3 and Ar.sub.4 may be the same or different. Ar.sub.1 to Ar.sub.4 may be substituted. At least one of Ar.sub.1 to Ar.sub.4 has a tert-butyl group. The total number of tert-butyl groups in one molecule of the organic compound is 2 or more.

A solid-state image capturing device according to the present disclosure includes an image capturing element, a light transmitting member, a support member, a sealing resin member, and a wall member. The image capturing element is mounted on a substrate. The support member is arranged in a part of an outer-peripheral portion of the image capturing element, the outer-peripheral portion surrounding a light receiving unit of the image capturing element. The light transmitting member is supported by the support member. The sealing resin member is arranged in a peripheral portion of the image capturing element. The wall member is provided between the sealing resin member and a part of the outer-peripheral portion of the image capturing element, the part excluding a part in which the support member is arranged.

A unit cell for use in an optical active pixel sensor (APS) includes a photodiode having a first terminal connected to a photodiode biasing PDB line, and a second terminal opposite from the first terminal; a reset switch transistor having a first terminal connected to the second terminal of the photodiode, and a second terminal connected to a reference voltage line, and a gate of the reset switch transistor is connected to a reset signal RST supply line; and an amplification transistor having a first terminal connected to an output readout line, and a second terminal connected to a driving voltage supply line, and a gate of the amplification transistor is connected to a node constituting the connection of the second terminal of the photodiode and the first terminal of the reset switch transistor. An optical APS device includes a sensor matrix formed of a plurality of unit cells according to any of the embodiments arranged in an array of rows and columns.