To improve a frame rate in a solid-state imaging element that compares a reference signal and a pixel signal.

The solid-state imaging element includes a differential amplifier circuit, a transfer transistor, and a source follower circuit. The differential amplifier circuit amplifies a difference between the potentials of a pair of input nodes and outputs the difference from an output node. The transfer transistor transfers charge from a photoelectric conversion element to a floating diffusion layer. The auto-zero transistor short-circuits the floating diffusion layer and the output node in a predetermined period. The source follower circuit supplies a potential to one of the pair of input nodes according to a potential of the floating diffusion layer.

To improve the accuracy of the recognition processing used in an image sensor. A solid-state imaging device includes a pixel array, a converter, an image processing unit, a digital signal processing unit, and a control unit. The pixel array has a plurality of pixels that perform photoelectric conversion. The converter converts an analog pixel signal output from the pixel array into digital image data. The image processing unit performs image processing on the digital image data. The digital signal processing unit performs recognition processing on the digital image data output by the image processing unit. The control unit performs optimization regarding at least one acquisition processing operation among acquisition of the analog pixel signal, acquisition of the digital image data, and acquisition of a result of the recognition processing based on the result of the recognition processing.

An imaging device capable of reducing a useless region on a substrate is provided. An imaging device including a plurality of substrates to be stacked includes a readout-only circuit disposed on a substrate different from a substrate having a pixel array unit including a plurality of photoelectric conversion elements disposed thereon, and performing an operation of reading out electrical signals obtained through photoelectric conversion in the plurality of photoelectric conversion elements, and a circuit disposed on a substrate different from the substrate having the readout-only circuit disposed thereon and performing an operation other than an operation of the readout-only circuit on the basis of the electrical signals.

A solid-state imaging device according to the present disclosure includes a light-receiving substrate, a circuit board, and a plurality of first connections. The light-receiving substrate includes a plurality of light-receiving circuits provided with photoelectric conversion elements. The circuit board is directly bonded to the light-receiving substrate and includes a plurality of address event detection circuits that detects individual changes in voltages output from the photoelectric conversion elements of the plurality of light-receiving circuits. The plurality of first connections is provided at a joint between the light-receiving substrate and the circuit board to electrically connect the light-receiving circuits and the address event detection circuits corresponding to each other.

A semiconductor device is provided. The device comprises first semiconductor wafer comprising first BEOL structure disposed on first side of first substrate, the first BEOL structure comprising first metallization layer disposed over the first substrate, second metallization layer disposed over the first metallization layer, first storage device disposed between the first and second metallization layers, and first transistor contacting the first storage device, and a first bonding layer disposed over the first BEOL structure. The device also comprises second semiconductor wafer comprising second BEOL structure disposed on first side of second substrate, the second BEOL structure comprising third metallization layer disposed over the second substrate, fourth metallization layer disposed over the third metallization layer, second storage device disposed between the third and fourth metallization layers, and second transistor contacting the second storage device, and second bonding layer disposed over the second BEOL structure and contacting the first bonding layer.

According to one embodiment, an optical sensor device includes an insulating substrate, a first conductive layer and an optical sensor element disposed between the insulating substrate and the first conductive layer. The optical sensor element is electrically connected to the first conductive layer and covered by the first conductive layer. The optical sensor element includes a first semiconductor layer formed of an oxide semiconductor and controls an amount of charge flowing to the first conductive layer according to an amount of incident light to the first semiconductor layer.

A distributed, parallel, image capture and processing architecture provides significant advantages over prior art systems. A very large array of computational circuits—in some embodiments, matching the size of the pixel array—is distributed around, within, or beneath the pixel array of an image sensor. Each computational circuit is dedicated to, and in some embodiments is physically proximal to, one, two, or more associated pixels. Each computational circuit is operative to perform computations on one, two, or more pixel values generated by its associated pixels. The computational circuits all perform the same operation(s), in parallel. In this manner, a very large number of pixel-level operations are performed in parallel, physically and electrically near the pixels. This obviates the need to transfer very large amounts of pixel data from a pixel array to a CPU/memory, for at least many pixel-level image processing operations, thus alleviating the significant high-speed performance constraints placed on modern image sensors.

To improve image quality of image data in a solid-state image sensor that detects an address event. The solid-state image sensor includes a photodiode, a pixel signal generation unit, and a detection unit. In the solid-state image sensor, the photodiode generates electrons and holes by photoelectric conversion. The pixel signal generation unit generates a pixel signal having a voltage according to an amount of one of the electrons and the holes. The detection unit detects whether or not a change amount in the other of the electrons and the holes has exceeded a predetermined threshold and outputs a detection signal.

The present technology relates to an imaging apparatus and electronic equipment that can reduce noise. A photoelectric conversion element, a conversion unit that converts a signal from the photoelectric conversion element into a digital signal, a bias circuit that supplies a bias current for controlling a current flowing through an analog circuit in the conversion unit, and a control unit that controls the bias circuit on the basis of an output signal from the conversion unit are provided, and at the start of transfer of a charge from the photoelectric conversion element, the control unit boosts a voltage at a predetermined position of the analog circuit. The conversion unit converts the signal from the photoelectric conversion element into a digital signal using a slope signal whose level monotonously decreases with time. The present technology is applicable to, for example, an imaging apparatus.

To reduce a circuit scale in a solid-state image sensor that detects an address event. The solid-state image sensor includes a pixel array unit and a drive circuit. In the solid-state image sensor, in the pixel array unit, a logarithmic response pixel that outputs an analog signal proportional to a logarithmic value of an incident light amount and a detection pixel that detects whether or not a change amount of the incident light amount has exceeded a predetermined threshold and outputs a detection signal indicating a detection result are arrayed. Furthermore, in the solid-state image sensor, the drive circuit drives the logarithmic response pixel and the detection pixel to output the analog signal and the detection signal.