In one embodiment of the invention, an apparatus is disclosed including an image sensor, a color filter array, and an image processor. The image sensor has an active area with a matrix of camera pixels. The color filter array is in optical alignment over the matrix of the camera pixels. The color filter array assigns alternating single colors to each camera pixel. The image processor receives the camera pixels and includes a correlation detector to detect spatial correlation of color information between pairs of colors in the pixel data captured by the camera pixels. The correlation detector further controls demosaicing of the camera pixels into full color pixels with improved resolution. The apparatus may further include demosaicing logic to demosaic the camera pixels into the full color pixels with improved resolution in response to the spatial correlation of the color information between pairs of colors.

The present description concerns an image sensor comprising a plurality of pixels (Pix), each comprising an elementary photodetector (211), wherein each pixel (Pix) comprises a circuit (201, 203) for detecting a beat frequency of a portion of a heterodyne beam received by the elementary photodetector (211) of the pixel, and wherein, in each pixel (Pix), the detection circuit (201, 203) comprises a frequency comparator (221) comprising a first input node (E1) receiving a first periodic AC signal (f.sub.pix) having a frequency equal to said beat frequency, a second input node (E2) receiving a second AC signal (f.sub.ramp) of variable frequency, and an output node (S) delivering an output signal switching from a first state to a second state when the frequency of the second signal (f.sub.ramp) exceeds the frequency of the first signal (f.sub.pix).

The present disclosure relates to a solid-state imaging device capable of receiving light entering a gap between pixel regions of imaging units by the pixel region when a plurality of imaging units is arranged, a method of manufacturing the same, and an electronic device. A CMOS image sensor includes a pixel region formed of a plurality of pixels. A convex lens is provided for each of a plurality of CMOS image sensors. A plurality of CMOS image sensors is arranged on a supporting substrate. The present disclosure is applicable to a solid-state imaging device and the like in which a plurality of CMOS image sensors is arranged on the supporting substrate, for example.

Provided is an imaging device that includes a plurality of pixels, each of the plurality of pixels including a photoelectric conversion unit configured to accumulate charges generated by an incident light, a first holding unit and a second holding unit configured to hold the charges, an amplification unit configured to output a signal based on the charges, a first transfer switch provided between the photoelectric conversion unit and the first holding unit, a second transfer switch provided between the photoelectric conversion unit and the second holding unit, a third transfer switch provided between the first holding unit and the amplification unit, and a fourth transfer switch provided between the second holding unit and the amplification unit, and outputs a signal including a signal based on actual signal charges and a signal including a signal based on false signal charges.

An image sensor is provided. The image sensor may include an active pixel electrically connected to a column line and configured to provide an output voltage to a pixel node and a bias circuit electrically connected between the pixel node and an earth terminal, and in which a first current flows through a first line electrically connected to the pixel node, wherein the bias circuit includes a first variable capacitor electrically connected to a power supply voltage, and a second variable capacitor electrically connected to the earth terminal, and the magnitude of the first current may be configured to vary based on a ratio of a capacitance of the first variable capacitor to a capacitance of the second variable capacitor. The output voltage may be configured to be adjusted based on the magnitude of the first current.

An image sensor compensates for noise. The image sensor includes a pixel array that includes a common monitor output line, a first monitoring pixel outputting a first monitoring signal, a second monitoring pixel outputting a second monitoring signal, and an active pixel configured to output a sensing signal based on an incident light. The image circuit also includes a binning circuit that receives the first and second monitoring signals through the common monitor output line and generates an average monitoring signal by performing binning on the first and second monitoring signals, and an analog-to-digital converter that detects an alternating current (AC) component of the average monitoring signal and couples the sampled AC component of the average monitoring signal to the sensing signal, thereby compensating for noise.

Provided is an image pickup apparatus, including: first and second photoelectric conversion elements; first and second transfer transistors configured to transfer charges respectively from the first and second photoelectric conversion elements when the first and second transfer transistors are brought into conductive states, respectively; a floating diffusion region configured to accumulate the charges transferred by the first and second transfer transistors; an amplifying transistor configured to output a signal corresponding to the charges transferred by the first and second transfer transistors; first and second drive wirings, which are electrically connected to gates of the first and second transfer transistors, respectively; and a conductive member, which is configured to electrically connect the floating diffusion region and a gate of the amplifying transistor to each other, and is configured to extend beyond the floating diffusion region in a plan view while being opposed to the first drive wiring.

A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

A solid-state imaging device, in which a plurality of overlapping substrates are included and the plurality of substrates are electrically connected to each other, includes a pixel circuit, a first readout circuit configured to read out signals from the photoelectric conversion units, a signal-processing circuit configured to perform signal processing on signals read out from the photoelectric conversion units, an output circuit configured to output signals processed by the signal-processing circuit to the outside, a first wiring configured to be provided to correspond to each of the four circuits and to supply a first voltage to each of the four circuits, a second wiring configured to be provided to correspond to each of the four circuits and to supply a second voltage different from the first voltage to each of the circuits, and a capacitor that is electrically connected with the first wiring and the second wiring.

An image sensor may be provided with an array of image sensor pixels formed on a substrate having front and back surfaces. Each pixel may have a photodiode that receives light through the back surface, a floating diffusion node, a charge transfer gate, and first and second reset transistor gates. A source follower transistor may have a gate coupled to the floating diffusion node and a source coupled to an addressing transistor. The pixel may be coupled to a column feedback amplifier through the addressing transistor and a column feedback reset path. The amplifier may provide a kTC-reset noise compensation voltage to the reset transistors for storage on a holding capacitor coupled between the floating diffusion and a drain terminal of the source follower. The floating diffusion may be bounded at the front surface by the transfer gate, the reset gate, and p-type doped regions.