A camera array, an imaging device and/or a method for capturing image that employ a plurality of imagers fabricated on a substrate is provided. Each imager includes a plurality of pixels. The plurality of imagers include a first imager having a first imaging characteristics and a second imager having a second imaging characteristics. The images generated by the plurality of imagers are processed to obtain an enhanced image compared to images captured by the imagers. Each imager may be associated with an optical element fabricated using a wafer level optics (WLO) technology.

A camera includes: a ring-like body mount having an inside diameter smaller than about 48 millimeters; and a solid-state image pickup device arranged oppositely to the body mount, the solid-state image pickup device having a rectangle light receiving section with a diagonal line length of about 43 millimeters or more. An apparent shape of the solid-state image pickup device viewed from a front surface side of the body mount is a rectangle in which one or more corners are oblique.

An image head including a housing, side rails, a port, and internal componentry. The housing includes a first side and a second side located opposite the second side. The side rails are located on or within the first side, the second side, or both and the side rails are configured to provide sliding directional control of the image head when connecting to a base. The port is configured to electrically connect the image head to the base. The internal componentry includes a printed circuit board; an integrated lens and sensor assembly (ISLA) configured to generate an image; and memory located on the printed circuit board configured to store the image.

An imaging apparatus and electronic equipment configured for reduced power consumption are disclosed. In one example, an imaging apparatus includes a pixel array unit including a first pixel portion and a second pixel portion different from the first pixel portion. Each of the first pixel portion and the second pixel portion includes a first photoelectric conversion unit and a second photoelectric conversion unit adjacent to the first photoelectric conversion unit. The pixel array unit includes a first drive line connected to the first photoelectric conversion unit of the first pixel portion and the second pixel portion, a second drive line connected to the second photoelectric conversion unit of the first pixel portion, and a third drive line connected to the second photoelectric conversion unit of the second pixel portion. The t technology can, for example, be applied in a CMOS image sensor having pixels for phase difference detection.

An optical sensor device may include an optical sensor that includes a set of sensor elements; an optical filter that includes one or more channels; a phase mask configured to distribute a plurality of light beams associated with a subject in an encoded pattern on an input surface of the optical filter; and one or more processors. The one or more processors may be configured to obtain, from the optical sensor, sensor data associated with the subject and may determine a distance of the subject from the optical sensor device. The one or more processors may select, based on the distance, a processing technique to process the sensor data, wherein the processing technique is an imaging processing technique or a spectroscopic processing technique. The one or more processors may process, using the selected processing technique, the sensor data to generate output data and may provide the output data.

An image sensor includes a plurality of pixels configured to receive an optical signal incident through a first lens portion; a planarization layer that has a same refractive index as a refractive index of the first lens portion; a second lens portion that is configured to classify the optical signal incident through the first lens portion according to an incidence angle, and is configured to deliver the optical signal to each of the plurality of pixels; and image processing circuitry configured to generate a subject image by combining one or more subimages obtained from the optical signal, wherein the planarization layer is arranged between the second lens portion and the plurality of pixels.

A multi-spectrum based image fusion apparatus is disclosed, which includes a light acquisition device, an image processor, and an image sensor having five types of photosensitive channels. The five types of photosensitive channels including red, green and blue RGB channels, an infrared IR channel and a full-band W channel. The light acquisition device acquires target light corresponding to incident light. The image sensor converts the target light into an image signal through the RGB channels, the IR channel and the W channel. The image processor analyzes the image signal into RGB color signals and a brightness signal, and fuses the RGB color signals and the brightness signal to obtain a fused image. The collection of the channels based on which the RGB color signals and the brightness signal are obtained includes the five types of photosensitive channels.

The present embodiment relates to a dual camera module comprising: a rigid first substrate having a first image sensor arranged thereon; a rigid second substrate spaced apart from the first substrate and having a second image sensor arranged thereon; a third substrate connected to the first substrate and the second substrate; and a flexible connection unit for connecting the first substrate to the second substrate, wherein the first substrate includes a first side surface, the second substrate includes a second side surface facing the first side surface, and the connection unit connects the first side surface of the first substrate to the second side surface of the second substrate.

The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

A method of detecting electromagnetic radiation includes illuminating a photodiode of a pixel sensor with electromagnetic radiation, using vertical gate structures of a transfer transistor to couple a cathode of the photodiode to an internal node of the pixel sensor, thereby generating an internal node voltage level, and generating an output voltage level of the pixel sensor based on the internal node voltage level.