An imaging device includes a pixel region in which a plurality of pixels, each including a photoelectric converter, are arranged, including an effective pixel region, an optical black region covered with a light-shielding film, and a dummy pixel region arranged between the effective pixel region and the optical black region. The pixels arranged in at least the effective pixel region and the optical black region among the plurality of the pixels each include an optical waveguide arranged above the photoelectric converter. The pixels including the optical waveguides are arranged between the effective pixel region and the optical black region so as to be spaced apart from each other by at least a one-pixel pitch.

A solid-state imaging device comprises a first pixel group includes a first photoelectric conversion unit that converts into electric charges reflection light pulses from an object irradiated with an irradiation light pulse, a first electric charge accumulation unit accumulating the electric charges in synchrony with turning on the irradiation light pulses, and a first reset unit resetting the electric charges; and a second pixel group includes a second photoelectric conversion unit that converts the reflection light into electric charges, a second electric charge accumulation unit that accumulates the electric charges synchronously with a switching the irradiation light pulses from on to off, and a second reset unit that releases a reset of the electric charges converted by the second photoelectric conversion unit.

The disclosure extends to methods, systems, and computer program products for producing an image in light deficient environments with luminance and chrominance emitted from a controlled light source.

The present disclosure relates generally to apparatus and methods for image sensing, and, more particularly, to a multi-bit quanta image sensor (QIS) having a controllable (e.g., adjustably variable) exposure response characteristic. Some embodiments provide an apparatus and method wherein the non-linearity of the response of a multi-bit QIS is controllable (e.g., selectively variable) by dynamically choosing the bit depth n during AID conversion, and/or later (i.e., post-conversion) by firmware and/or software.

The present disclosure relates to a comparator, an AD converter, a solid-state image pickup device, an electronic device, a method of controlling the comparator, a data writing circuit, a data reading circuit, and a data transferring circuit, capable of improving the determining speed of the comparator and reducing power consumption. The comparator includes: a differential input circuit configured to operate with a first power supply voltage, the differential input circuit configured to output a signal when an input signal is higher than a reference signal in voltage; a positive feedback circuit configured to operate with a second power supply voltage lower than the first power supply voltage, the positive feedback circuit being configured to accelerate transition speed when a compared result signal indicating a compared result between the input signal and the reference signal in voltage, is inverted, on the basis of the output signal of the differential input circuit; and a voltage conversion circuit configured to convert the output signal of the differential input circuit into a signal corresponding to the second power supply voltage. The present disclosure can be applied to, for example, a comparator of a solid-state image pickup device.

The invention discloses a pixel acquisition circuit, an image sensor, and an image acquisition system. Therein, the pixel acquisition circuit comprises a photodetection unit, a filter-amplifier unit, a sample and hold unit, and an activation control unit. The photodetection unit is operative to output a first electrical signal corresponding to the light signal illuminating thereon in real time. The filter-amplifier unit has its input terminal coupled with the output terminal of the photodetector, and is operative to perform amplification and filtering out the signal component below a frequency threshold on the first electrical signal, so as to output a second electrical signal. A threshold comparison unit is operative to determine whether the second electrical signal is greater than a first threshold and/or less than a second threshold, and generate an activation instruction signal when the second electrical signal is greater than the first threshold or less than the second threshold. The sample and hold unit has its output terminal coupled with an interface bus. In response to receiving an activation instruction signal, the activation control unit instructs the sample and hold unit to acquire and buffer the first electrical signal, and sends a transmission request to the interface bus.

An image sensor includes a plurality of pixels, each pixel including a light sensing structure including first, second and third light sensing elements sequentially stacked on a substrate, the light sensing structure having a first surface adjacent to a readout circuit and a second surface including a light receiving portion between first and second circumferential portions, a first through via on the first circumferential portion, extending from the first surface to connect with the first light sensing element, and configured to transfer charges of the first light sensing element to the readout circuit, and a vertical transfer gate on a second circumferential portion and configured to transfer charges of the second light sensing element to the readout circuit, the first through via and the vertical transfer gate of each pixel being arranged in a 1-shaped or L-shaped pattern in the first and second circumferential portions.

A light sensor is disclosed. The light sensor comprises a first pixel and a second pixel. The light sensor comprises measurement circuitry. The first pixel is configured to accumulate a first charge and the second pixel is configured to accumulate a second charge when the light sensor is exposed to light. The first pixel is configured to trigger the measurement circuitry to measure the second charge when the first charge reaches a threshold capacity of the first pixel. Also disclosed is an active pixel sensor comprising the light sensor, an image sensor and a device incorporating the light sensor.

A light-detecting device includes a photoelectric conversion film configured to generate a hole as a photoelectric charge and a readout circuit. The readout circuit includes a first node configured to hold the photoelectric charge generated by the photoelectric conversion film and a first P-type metal oxide semiconductor (MOS) transistor connected to the first node and a constant voltage source.

A selection pixel where signal readout is performed and a reference pixel where signal readout is not performed are arranged in a pixel array section, and an amplification transistor of the selection pixel and an amplification transistor of the reference pixel each source electrode of which is connected in common to a common wire are connected with a constant current source via the common wire to form a differential amplification circuit. Then, a bypass control section which selectively establishes connection between the constant current source and a differential output node of the differential amplification circuit and limits a voltage of the differential output node to a predetermined voltage by causing a bypass current to flow between the constant current source and the differential output node, and a current path for bypass current that supplies the bypass current to the constant current source through the pixel array section are included.