A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.

Embodiments of a hybrid imaging sensor that optimizes a pixel array area on a substrate using a stacking scheme for placement of related circuitry with minimal vertical interconnects between stacked substrates and associated features are disclosed. Embodiments of maximized pixel array size/die size (area optimization) are disclosed, and an optimized imaging sensor providing improved image quality, improved functionality, and improved form factors for specific applications common to the industry of digital imaging are also disclosed.

A solid state imaging device includes: a pixel array unit that has a plurality of pixels 2-dimensionally arranged in a matrix and a plurality of signal lines arranged along a column direction; A/D conversion units that are provided corresponding to the respective signal lines and convert an analog signal output from a pixel through the signal line into a digital signal; and a switching unit that switches or converts the analog signal output through each signal line into a digital signal using any of an A/D conversion unit provided corresponding to the signal line through which the analog signal is transmitted, and an A/D conversion unit provided corresponding to a signal line other than the signal line through which the analog signal is transmitted.

In a first sensitivity level, an AD converter performs AD conversion selectively using, in accordance with the level of the analog signal, any one of a first reference signal and a second reference signal that have mutually different slopes, and in a second sensitivity level that is different from the first sensitivity level, the AD converter performs AD conversion only using a third reference signal.

The present disclosure discloses an image sensor, an imaging device, a mobile terminal and an imaging method. The image sensor comprises a photosensitive pixel array and a filer arranged on the photosensitive pixel array. The filter comprises a filer unit array comprised a plurality of filter units, wherein each filter unit covers N photosensitive pixels, and some of the filter units comprise white filter areas. The white filter areas cover at least one of the N photosensitive pixels of the N photosensitive pixels, wherein a merged pixel is formed by the N photosensitive pixels covered by the same filter unit, wherein N is a positive integer.

A semiconductor device includes a pixel array including a plurality of pixels arranged in a matrix, each pixel including a first switch and a second switch, a scanning circuit, in a first mode, enabling a first signal to be output from the pixel by setting the first and second switches to “off” in a period before a first timing, enabling a second signal to be output from the pixel by setting only the first switch to “on” for a predetermined period from the first timing, and enabling a third signal to be output from the pixel by setting the first and second switches to “on” for a predetermined period from a second timing after the first timing, and a first AD (Analog/Digital) converter, in a second mode, capable of performing AD conversion by comparing the difference between the second signal and the first signal with a reference signal.

Provided is an image processing apparatus for correcting blinking defect noise contained in image data generated by an image sensor. The image sensor includes a pixels arranged two-dimensionally and reading circuits configured to read a pixel value. The image processing apparatus includes: an information acquisition unit configured to acquire noise information that is defined by associating positional information of the reading circuits or positional information of each of the pixels with feature data related to the blinking defect noise caused by the reading circuits; an estimation unit configured to estimate a random noise amount in a pixel of interest based on the feature data and a random noise model for estimating the random noise amount in the pixel of interest; and a correction unit configured to correct a pixel value of the pixel of interest based on the random noise amount estimated by the estimation unit.

Provided is a radiation imaging apparatus, including: a plurality of pixels configured to output image signals corresponding to radiation; an image signal line configured to output the image signals; and a detection signal line configured to output a detection signal for detection of irradiation of the radiation, in which at least one of the plurality of pixels includes: a conversion element configured to convert the radiation into charge; a first switch configured to output the image signal corresponding to the charge via the image signal line; a storage capacitor including a first electrode and a second electrode, in which the first electrode is electrically connected to the conversion element to store the charge; and a second switch configured to electrically connect the second electrode and the detection signal line.

An image sensor comprises a pixel circuit including a reset transistor and configured to output a pixel signal; and a differential comparator including a pixel input, a reference input, and a comparator output, wherein one of a source or a drain of the reset transistor is connected to the comparator output. In this manner, an active reset method may be incorporated in the image sensor.