Provided is a supporting unit supporting a substrate. The supporting unit may include: a plate; heating elements provided to the plate and controlling a temperature of a substrate, wherein the heating elements are arranged to control temperatures of different areas of the substrate; and a power supply module supplying power to the heating element, and the power supply module may be configured to continuously supply the power to at least two heating elements of the heating elements.

A substrate support unit includes: a ceramic body having a surface for supporting a substrate, the ceramic body including aluminum nitride (AlN), a heat generating resistor disposed in the ceramic body, and including molybdenum (Mo), and a coating layer surrounding the heat generating resistor, and including molybdenum aluminum nitride (MoAlN).

A wafer support table includes a ceramic base and a rod. The ceramic base has a wafer placement surface and includes an RF electrode and a heater electrode that are embedded therein in the mentioned order from the side closer to the wafer placement surface. A hole is formed in the ceramic base to extend from a rear surface toward the RF electrode. The rod is made of Ni or Kovar, is bonded to a tablet exposed at a bottom surface of the hole, and supplies radio-frequency electric power to the RF electrode therethrough. An Au thin film is coated over a region of an outer peripheral surface of the rod ranging from a base end of the rod to a predetermined position.

A structural body (2, 2A to 2E) according to the present disclosure includes a base (10, 10D, 10E), a first electrode layer (111), a second electrode layer (112), a first via conductor (131), a second via conductor (132), and a connection conductor (133). The base (10, 10D, 10E) is composed of a ceramic. The first electrode layer (111) and the second electrode layer (112) are located inside the base (10, 10D, 10E). The first via conductor (131) and the second via conductor (132) are located inside the base (10, 10D, 10E) and connect the first electrode layer (111) and the second electrode layer (112). The connection conductor is located inside the base (10, 10D, 10E), and connects the first via conductor and the second via conductor.

Structures (2, 2A to 2P) according to the present disclosure have respective bases (10, 10A), electrode layers, and terminals. The bases (10, 10A) are made of a ceramic. The electrode layers (111, 111C, 111D, 111F, 111M, 111N, 111O) are located inside the respective bases (10, 10A). The terminals (41, 41G, 41H, 41I, 41J, 41K, 41L) are electrically connected to the respective electrode layers (111, 111C, 111D, 111F, 111M, 111N, 111O) at respective tip portions of the terminals. Further, the terminals (41, 41G, 41H, 41I, 41J, 41K, 41L) are in contact with the respective electrode layers (111, 111C, 111D, 111F, 111M, 111N, 111O) at respective tip surfaces and side surfaces of the terminals.

A MEMS hotplate is used as a test substrate for characterizing a temperature-dependent fabrication process. According to a variant, an array of MEMS hotplates is used to provide multiple test substrates which can be simultaneously heated to different temperatures to provide multiple different temperature-dependent characterizations of the process.

A wafer baking apparatus includes a chamber including a processing space, and a wafer heater disposed in the processing space and configured to support a wafer. The wafer heater includes a first heating plate, a heating resistance pattern disposed on a lower surface of the first heating plate, a second heating plate disposed on the first heating plate, and a heat dispersion layer interposed between the first and second heating plates and having thermal conductivity lower than a thermal conductivity of materials of the first and second heating plates.

A wafer placement table includes a ceramic substrate having a wafer placement surface; a first electrically conductive layer embedded in the ceramic substrate; and an electrically conductive via connected at one end to the first electrically conductive layer, wherein the electrically conductive via includes a plurality of columnar members connected together in a vertical direction, and wherein the area of the connection surface of one of two columnar members connected to each other is larger than the area of the connection surface of the other.

There is provided a substrate holder including: a ceramic base member; electrodes embedded in the ceramic base member; at least one conductive member embedded in the ceramic base member; connecting parts each of which has an end electrically connected to one of the electrodes; a land electrically connected to the at least one conductive member; and terminals each of which has an end connected to one of the electrodes, the at least one conductive member or the land. A resistance value between a connecting part, included in the connecting parts and connected to the at least one conductive member, and a terminal, included in the terminals and connected to the at least one conductive member is smaller than a resistance value between both ends of each of the electrodes; and the number of the terminals is smaller than two times the number of the electrodes.

A metal wiring bonding structure 100 comprises contacts 753 of connection FPC 75 and heater lands 46 of a sheet heater 30 to be bonded by a solder bonding member 766. A connection FPC 75 includes contact opposed lands 754 famed of metal and disposed at positions respectively opposed to the plurality of contacts 753 on a surface of a support layer 751 opposite from a surface on which metal wires 750 are provided, and through holes 755 penetrating the contact opposed lands 754, the support layer 751, and contacts 753. Solder bonding members 756 cover surfaces of contact opposed lands 754 and are filled inside through holes 755 and in a bonding space C.