A substrate support includes a heater body, a heater element, and a heater terminal. The heater body is formed from a ceramic material and has upper and lower surfaces separated by a thickness. The heater element is arranged between the upper and lower surfaces and is embedded within the ceramic material forming the heater body. The heater terminal is arranged between the upper and lower surfaces, is electrically connected to the heater element, and has an electrode surface and a rounded surface. The electrode surface opposes the lower surface to flow an electric current to the heater element. The rounded surface opposes the upper surface and is embedded within the ceramic material to limit stress within the ceramic material during heating of a substrate seated on the upper surface of the heater body. Semiconductor processing systems and methods of making substrate supports for semiconductor processing systems are also described.

A heater includes a base, a resistive heating body, and a terminal portion. The base is formed of ceramic and has a plate shape. The resistive heating body is located in the base. The terminal portion is electrically connected to the resistive heating body. The base includes a protruding portion surrounding the terminal portion, on a lower surface side. The protruding portion is formed of a ceramic member, and the terminal portion passes through a through hole formed in the ceramic member. The ceramic member is bonded to at least one of the lower surface of the base or the terminal portion.

In a ceramic heater, a central-zone heating resistor and an outer-peripheral-zone heating resistor are embedded in a disc-like ceramic base having a wafer-mounting surface on one side. The central-zone heating resistor is a wire extending in a single continuous line from one of a pair of terminals to the other. The pair of terminals as a whole form a circular shape in plan view.

The present invention relates to a ceramic heater with improved reliability, the ceramic heater including: a heater body having a mesh type high-frequency electrode, and an electrode rod connecting member being in contact with a lower surface of the high-frequency electrode; and a heater support mounted on a lower portion of the heater body and configured to support the heater body, in which the electrode rod connecting member is in area contact with one surface of the high-frequency electrode.

An electrostatic chuck heater includes a resistance heating element. A region of the resistance heating element from one end to another end of the resistance heating element is divided into a plurality of sections. Recessed grooves are provided in the respective sections along a longitudinal direction of the resistance heating element in a surface. In a connection portion between the recessed grooves that are provided in the adjacent sections, a projection portion that extends along the connection portion is provided.

The present invention relates to a ceramic heater with improved reliability, comprising: a heater body provided with a high-frequency electrode made of a mesh type metal material, and an electrode rod connecting member that contacts the bottom surface of the high-frequency electrode; and a heater support that is mounted below the heater body and supports the heater body, wherein the high-frequency electrode comprises a first electrode member having a wire type mesh structure and a second electrode member having a sheet type mesh structure.

An AlN joined body includes a first AlN member and a second AlN member that are joined together. The content of yttria in the first AlN member is equal to or below the detection limit. The second AlN member contains yttria.

Disclosed is a susceptor for high-temperature use having a shaft with low thermal conductivity, wherein in a susceptor including a plate for wafer mounting and a shaft coupled to the plate, the plate and the shaft each include a sintered body having 90 wt % or more of an AlN phase, the sintered body of the plate is a magnesium-containing AlN sintered body having a volume resistance of 5*10.sup.8 Ω.Math.cm or more at 650° C., and the sintered body of the shaft is an AlN sintered body having a room-temperature thermal conductivity of 100 W/mK or less.

Implementations described herein provide a substrate support assembly. The substrate support assembly has a first ceramic plate having a workpiece supporting surface and a bottom surface. The first ceramic plate has a plurality of secondary heaters each forming a plurality of micro zones. The substrate support assembly has a second ceramic plate having an upper surface and a lower surface. A first metal bonding layer is disposed between the bottom surface of the first ceramic plate and the upper surface of the second ceramic plate. A third ceramic plate has a top portion and a bottom portion. The third ceramic plate has primary heaters. A second metal bonding layer is disposed between the lower surface of the second ceramic plate and the top portion of the third ceramic plate.

An IR radiator element (1) suitable for use as a miniature infrared emitter (micro-hotplate) in a gas sensor, IR-spectrometer or electron microscope. The micro-hotplate comprises a plate (2) supported by multiple support arms (4). The plate and arms are fabricated as a MEMS device comprising a single contiguous piece of electrically-conducting refractory ceramic such as hafnium carbide (HfC) or tantalum hafnium carbide (TaHfC). Each of the arms (4), in addition to providing structural cantilever support for the plate (2), acts as a heating element for the plate (2). The plate (2) is heated by applying a voltage across the arms (4). The arms (4) may also be shaped to absorb thermomechanical stress which arises during the heating and cooling of the arms and plate. The plate, which may have an area of less than 0.05 mm.sup.2 and a thickness of between 1% and 10% of the largest dimension of the plate (2), for example, can be heated to 4,000 K or more and cooled again with a duty cycle of as little 0.5 ms, thereby permitting pulsed operation at frequencies of up to 2 kHz. Its small size (10-200 μm) and low power consumption (e.g. 10-100 mW) make the micro-hotplate suitable for use in cryogenic applications, in miniaturized devices or in battery-powered devices such as mobile phones.