Plasma applications are disclosed that operate with argon or helium at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species in the effluent stream. Laminar gas flow is developed prior to forming the plasma and at least one of the electrodes can be heated which enables operation at conditions where the argon or helium plasma would otherwise be unstable and either extinguish, or transition into an arc. The techniques can be employed to clean and activate a metal substrate, including removal of oxidation, thereby enhancing the bonding of at least one other material to the metal.

Plasma applications are disclosed that operate with argon or helium at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species in the effluent stream. Laminar gas flow is developed prior to forming the plasma and at least one of the electrodes can be heated which enables operation at conditions where the argon or helium plasma would otherwise be unstable and either extinguish, or transition into an arc. The techniques can be employed to clean and activate a metal substrate, including removal of oxidation, thereby enhancing the bonding of at least one other material to the metal.

A cooking device for frying food in a microwave oven, the cooking device comprising a low pressure gas chamber; a plasma igniting means configured to ignite plasma within the low pressure gas chamber when supplied with microwave radiation; and a cooking enclosure formed of metal, the cooking enclosure defining a food-receiving region and being thermally coupled to the low pressure gas chamber.

A cooking device for frying food in a microwave oven, the cooking device comprising a low pressure gas chamber; a plasma igniting means configured to ignite plasma within the low pressure gas chamber when supplied with microwave radiation; and a cooking enclosure formed of metal, the cooking enclosure defining a food-receiving region and being thermally coupled to the low pressure gas chamber.

Plasma applications are disclosed that operate with argon or helium at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species in the effluent stream. Laminar gas flow is developed prior to forming the plasma and at least one of the electrodes can be heated which enables operation at conditions where the argon or helium plasma would otherwise be unstable and either extinguish, or transition into an arc. The techniques can be employed to clean and activate a metal substrate, including removal of oxidation, thereby enhancing the bonding of at least one other material to the metal.

Plasma applications are disclosed that operate with argon or helium at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species in the effluent stream. Laminar gas flow is developed prior to forming the plasma and at least one of the electrodes can be heated which enables operation at conditions where the argon or helium plasma would otherwise be unstable and either extinguish, or transition into an arc. The techniques can be employed to clean and activate a metal substrate, including removal of oxidation, thereby enhancing the bonding of at least one other material to the metal.

A semiconductor wafer received in a chamber is preheated by light irradiation from halogen lamps, and is thereafter irradiated with flashes of light from flash lamps. Prior to the flash irradiation, ozone is stored in a gas storage tank, so that the pressure in the gas storage tank is higher than atmospheric pressure. On the other hand, the pressure in the chamber is reduced to lower than atmospheric pressure. In this condition, a supply valve is opened between the time when the flash lamps turn on to start the flash irradiation and the time when the temperature of a front surface of the semiconductor wafer reaches a peak temperature. This allows ozone gas to flow all at once from the gas storage tank toward the chamber, thereby supplying the ozone gas instantaneously into the chamber.

A semiconductor wafer received in a chamber is preheated by light irradiation from halogen lamps, and is thereafter irradiated with flashes of light from flash lamps. Prior to the flash irradiation, ozone is stored in a gas storage tank, so that the pressure in the gas storage tank is higher than atmospheric pressure. On the other hand, the pressure in the chamber is reduced to lower than atmospheric pressure. In this condition, a supply valve is opened between the time when the flash lamps turn on to start the flash irradiation and the time when the temperature of a front surface of the semiconductor wafer reaches a peak temperature. This allows ozone gas to flow all at once from the gas storage tank toward the chamber, thereby supplying the ozone gas instantaneously into the chamber.