A chamber to generate extreme ultraviolet light includes a gas supply port through which gas is supplied into the chamber; a light concentrating mirror concentrating the extreme ultraviolet light; a first exhaust pipe arranged in the chamber, surrounding a plasma generation region, and including a first opening through which the gas supplied into the chamber is sucked and through which the extreme ultraviolet light is radiated toward the light concentrating mirror, and a first exhaust port through which the gas sucked through the first opening is exhausted to an outside of the chamber; and a second exhaust pipe arranged in the chamber, and including a second opening which is located in a periphery of the first opening and through which the gas supplied into the chamber is sucked, and a second exhaust port through which the gas sucked through the second opening is exhausted to the outside of the chamber.

An EUV light source includes a rotatable, cylindrically-symmetric element having a surface coated with a plasma-forming target material, a drive laser source configured to generate one or more laser pulses sufficient to generate EUV light via formation of a plasma by excitation of the plasma-forming target material, a set of focusing optics configured to focus the one or more laser pulses onto the surface of the rotatable, cylindrically-symmetric element, a set of collection optics configured to receive EUV light emanated from the generated plasma and further configured to direct the illumination to an intermediate focal point, and a gas management system including a gas supply subsystem configured to supply plasma-forming target material to the surface of the rotatable, cylindrically-symmetric element.

Apparatus for and method of cleaning an electrically conductive surface of an optical element in a system for generating extreme ultraviolet radiation in which electrically conductive surface is used as an electrode for generating a plasma which cleans the surface.

Provided is an apparatus for generating extreme ultraviolet light. The apparatus includes a collector mirror unit, a gas supply unit configured to supply a processing gas to the collector mirror unit, a gas supply nozzle arranged in at least one area of the collector mirror unit and configured to supply the processing gas to a surface of the collector mirror unit, and a controller configured to adjust a shape of a spray hole of the gas supply nozzle. The shape of the spray hole may be changed according to a control operation of the controller.

An extreme ultraviolet light generation apparatus includes a chamber, a target supply unit supplying a droplet of a target substance toward a plasma generation region, a light concentrating mirror concentrating extreme ultraviolet light, a debris shield provided with a first opening through which the extreme ultraviolet light passes from the plasma generation region toward the light concentrating mirror and a second opening, a gas supply port supplying a gas to an internal space of the chamber, and an exhaust port exhausting a gas in a space surrounded by the debris shield. At least a part of the second opening is provided at a position symmetrical to at least a part of the first opening with reference to a plane including a trajectory of the laser light and a trajectory of the droplet. The gas at the internal space flows into the space through the first opening and the second opening.

An extreme ultraviolet (EUV) source includes a collector associated with the vessel. The extreme ultraviolet (EUV) source includes a plurality of vanes along walls of the vessel. Each vane includes a stacked vane segment, and the stacked vane segments for each vane are stacked in a direction of drainage of tin (Sn) in the vessel. The EUV source includes a thermal control system comprising a plurality of independently controllable heating elements, where a heating element is configured to provide localized control for heating of a vane segment of the stacked vane segments.

A method of extreme ultraviolet lithography includes: generating within a source vessel extreme ultraviolet (EUV) light by striking a stream of droplets of target material shot across the source vessel with pulses from a laser to create a plasma from which EUV light is emitted; directing the generated EUV light out of the source vessel through an intermediate focus cap along a pathway toward a reticle of a scanner; creating a longitudinal mechanical wave extending across the pathway; and exposing a photoresist layer on a semiconductor substrate to pattern a circuit layout by the generated EUV light.

A target material generator includes a fluid flow path between reservoir system and a nozzle supply system, and a coupling assembly in the fluid flow path. The target material generator is a part of an extreme ultraviolet light source. The coupling assembly includes a first fitting coupled to a second fitting to thereby form a flow conduit along the fluid flow path, wherein a seal is formed between the first fitting and the second fitting, and a sleeve disposed along inner walls of the flow conduit and between the seal and the flow conduit such that a contaminant trap is formed between the sleeve and the seal.

An extreme ultraviolet radiation (EUV) source, including: a vessel having an inner vessel wall and an intermediate focus (IF) region; an EUV collector disposed inside the vessel, the EUV collector including a reflective surface configured to reflect EUV radiation toward the intermediate focus region, the reflective surface configured to directionally face the IF region of the vessel; a showerhead disposed along at least a portion of the inner vessel wall, the showerhead including a plurality of nozzles configured to introduce gas into the vessel; and one or more exhausts configured to remove gas introduced into the vessel, the one or more exhausts being oriented along at least a portion of the inner vessel wall so that the gas is caused to flow away from the EUV collector.

A modular laser-produced plasma X-ray system includes a liquid metal flow system enclosed within a low-pressure chamber, the flow system including a liquid metal, wherein in at least one location on the liquid metal forms a metal target directly illuminated by laser pulses, a circulation pump within the liquid metal flow system for circulating the liquid metal, a laser pulse emitter configured to transmit laser pulses into the chamber via a laser window, focusing optics, located between the emitter and the metal target, the focusing optics directing the laser pulses to strike the metal target at a target location to form X-ray pulses, and an X-ray window positioned within the chamber to enable the X-ray pulses to exit the chamber.