Patent classifications
H05H1/0025
ANOMALOUS PLASMA EVENT DETECTION AND MITIGATION IN SEMICONDUCTOR PROCESSING
In particular embodiments, anomalous plasma events, which may include formation of an electric arc in a semiconductor processing chamber, may be detected and mitigated. In certain embodiments, a method may include detecting an optical signal emitted by a plasma, converting the optical signal to a voltage signal, and forming an adjusted voltage signal. Responsive to determining that the changes associated with the adjusted voltage signal exceed a threshold, an output power of an RF signal coupled to the chamber may be adjusted. Such adjustment may mitigate formation of the anomalous plasma event occurring within the chamber.
PLASMA STABILITY DETERMINING METHOD AND PLASMA PROCESSING APPARATUS
A method and apparatus for determining a stability of plasma in a plasma processing apparatus for performing a plasma processing by converting into plasma a processing gas supplied into a processing container. The method includes: detecting a light emission intensity of the plasma in the processing container while the plasma is generated in the processing container; generating a first function representing a relationship between time and the light emission intensity from a detection result of the light emission intensity; differentiating the first function with time to calculate a differential value, and generating a second function from a relationship between an absolute value of the differential value and time; and integrating the second function with time to calculate an integral value, and determining a stability of the plasma based on the calculated integral value. A related apparatus is also provided.
NON-PERTUBATIVE MEASUREMENTS OF LOW AND NULL MAGNETIC FIELD IN HIGH TEMPERATURE PLASMAS
Systems and methods that facilitate non-pertubative measurements of low and null magnetic field in high temperature plasmas.
Method of determining plasma abnormality, method of manufacturing semiconductor device, and substrate processing apparatus
There is provided a technique that includes: imaging a gas supply hole configured to supply a plasma-converted gas into a process chamber by using an imaging device disposed in the process chamber; detecting a plasma emission intensity based on an image of the imaged gas supply hole; and determining at least one of whether abnormal plasma discharge has occurred and whether plasma flickering has occurred based on the detected plasma emission intensity.
Non-pertubative measurements of low and null magnetic field in high temperature plasmas
Systems and methods that facilitate non-pertubative measurements of low and null magnetic field in high temperature plasmas.
METHOD AND SYSTEM FOR MEASURING PLASMA EMISSIONS IN A PLASMA PROCESSING REACTOR
A method of characterizing a Plasma Processing Reactor (PPR) by measuring the electromagnetic (EM) emissions of a plasma inside the PPR using an Optical Plasma Monitoring Apparatus (OPMA) is described. The OPMA contains a plurality of photo-sensors that can measure EM emissions of narrow and/or broad spectral regions at various selected positions on the OPMA, and record them as a function of time. The OPMA can have substantially similar dimensions of a workpiece to facilitate loading and unloading into the PPR.
METHOD OF DETERMINING PLASMA ABNORMALITY, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS
There is provided a technique that includes: imaging a gas supply hole configured to supply a plasma-converted gas into a process chamber by using an imaging device disposed in the process chamber; detecting a plasma emission intensity based on an image of the imaged gas supply hole; and determining at least one of whether abnormal plasma discharge has occurred and whether plasma flickering has occurred based on the detected plasma emission intensity.
FLOW FIELD VISUALIZATION DEVICE, FLOW FIELD OBSERVATION METHOD, AND PLASMA GENERATOR
A flow field visualization device includes a chamber, a power supply, at least one pair of electrodes, and at least two high-speed cameras. The power supply outputs a voltage for plasma generation, and the pair of electrodes is disposed in the chamber. The pair of electrodes includes a first electrode and a second electrode. The first electrode has a plurality of first tips, the second electrode has a plurality of second tips, and the first tips and the second tips are aligned with each other. The pair of electrodes generates a periodically densely distributed plasma by exciting a gas in the chamber through the voltage from the power supply. The high-speed cameras are disposed outside the chamber and are positioned in different directions corresponding to the pair of electrodes in order to capture images of different dimensions.
NON-PERTUBATIVE MEASUREMENTS OF LOW AND NULL MAGNETIC FIELD IN HIGH TEMPERATURE PLASMAS
Systems and methods that facilitate non-pertubative measurements of low and null magnetic field in high temperature plasmas.
Plasma stability determination method and plasma processing apparatus
A method and apparatus for determining a stability of plasma in a plasma processing apparatus for performing a plasma processing by converting into plasma a processing gas supplied into a processing container. The method includes: detecting a light emission intensity of the plasma in the processing container while the plasma is generated in the processing container; generating a first function representing a relationship between time and the light emission intensity from a detection result of the light emission intensity; differentiating the first function with time to calculate a differential value, and generating a second function from a relationship between an absolute value of the differential value and time; and integrating the second function with time to calculate an integral value, and determining a stability of the plasma based on the calculated integral value. A related apparatus is also provided.