Patent classifications
H05H1/0081
MEMS RESONATOR SENSOR SUBSTRATE FOR PLASMA, TEMPERATURE, STRESS, OR DEPOSITION SENSING
Embodiments disclosed herein include diagnostic substrates and methods of using the diagnostic substrates to extract plasma parameters. In an embodiment, a diagnostic substrate comprises a substrate and an array of resonators across the substrate. In an embodiment, the array of resonators comprises at least a first resonator with a first structure and a second resonator with a second structure. In an embodiment, the first structure is different than the second structure.
Langmuir Probe Operating at Fixed Voltages
In one embodiment, systems and methods include using a Langmuir probe to measure a plasma. The Langmuir probe comprises a housing, wherein the housing comprises an outer diameter and an inner diameter, wherein the inner diameter defines an internal cavity. The Langmuir probe further comprises a plurality of bodies, wherein the plurality of bodies is disposed at least partially within the inner cavity, wherein each of the plurality of bodies comprise a set of internal cavities. The Langmuir probe further comprises a plurality of double Langmuir probes disposed each set of the internal cavities.
Plasma-based electro-optical sensing and methods
This disclosure relates to systems and methods element identification and quantification. The method includes generating pulsed plasma based on an input voltage and a current so that the pulsed plasma interacts with a particle and atomizes the particle when the pulsed plasma is disposed in a flow field, identifying an atomic emission of the pulsed plasma with an optical sensor, determining element identification and quantification based on the identified emission of pulsed plasma, generating DC plasma having an electrical field based on an input DC voltage and a DC current, positioning the DC plasma in a flow field, detecting a change in the electrical field of the DC plasma, and determining a size of the particle based on the change in electrical field.
METHOD FOR MEASURING PLASMA ION NONEXTENSIVE PARAMETER
The present invention relates to a method for measuring the ion nonextensive parameter of plasma includes the following steps: describe the plasma with nonextensive statistical mechanics, obtain the equation describing the relationship between the geodesic acoustic mode frequency and the ion acoustic speed of plasma; collect the measurement data of the geodesic acoustic mode frequencies and plasma temperature in the device where the plasma is to be measured; the obtained equation describing the relationship between the geodesic acoustic mode frequency and the ion acoustic speed of plasma is used to linearly fit the collected measured data of the geodesic acoustic mode frequency and the plasma temperature in the device where the plasma is to be measured to obtain the slope value; based on the derived equation and the obtained slope values, and combining with the safety factor of the device where the plasma is to be measured, the ion nonextensive parameter is solved numerically. The present invention fills the gap where the electron nonextensive parameter can be measured with the nonextensive single electric probe, but the corresponding ion nonextensive parameter cannot be diagnosed yet in the field of nonextensive parameters diagnosis.
WAVEFORM SHAPE FACTOR FOR PULSED PVD POWER
Power supplies, waveform function generators and methods for controlling a plasma process are described. The power supplies or waveform function generators include a component for executing the method in which a waveform shape change index is determined during a plasma process and evaluated for compliance with a predetermined tolerance.
SUPPRESSION OF SELF PULSING DC DRIVEN NONTHERMAL MICROPLASMA DISCHARGE TO OPERATE IN A STEADY DC MODE
The current disclosure relates to a suppressor circuit configuration for extending the stable region of operation of a DC driven micro plasma discharge at atmospheric and higher pressures.
Electric field sensor, surface wave plasma source, and surface wave plasma processing apparatus
An electric field sensor includes a probe, a cylindrical probe guide, an insulating member, a preload spring and a connector. The probe serves as an inner conductor of a coaxial transmission path and has a portion forming a monopole antenna at a tip end to be in constant contact with a microwave transmission window by a pressing force of a built-in spring thereof. The probe guide is disposed at an outer side of the probe and serves as an outer conductor of the coaxial transmission path. The insulating member is disposed between the probe and the probe guide. The preload spring preloads the probe guide downward and presses the probe guide so that the tip end of the probe guide comes in constant contact with the planar slot antenna. The connector is connected to the probe and the probe guide to connect coaxial signal cables for extracting signals.
Microscale gas breakdown device and process
A microscale gas breakdown device includes a first surface and a second surface. The first surface and the second surface define a gap distance. The device includes a perturbation on the first surface or the second surface. The perturbation is defined by a height value and a radius value. The device includes a current source or a voltage source configured to apply a current or a voltage across the first surface and the second surface. In response to the current or the voltage being applied, a resulting discharge travels along a first discharge path in response to being exposed to a high pressure and a second discharge path in response to being exposed to a low pressure.
WAVEFORM SHAPE FACTOR FOR PULSED PVD POWER
Power supplies, waveform function generators and methods for controlling a plasma process are described. The power supplies or waveform function generators include a component for executing the method in which a waveform shape change index is determined during a plasma process and evaluated for compliance with a predetermined tolerance.
DEVICE FOR DETECTING PLASMA OF ULTRA FAST WITH MULTI CHANNEL
Disclosed herein is a multi-channel device for detecting plasma at an ultra-fast speed, including: a first antenna module connected to a first output terminal in contact with a substrate on a chuck of a process chamber and extending to ground, and receiving a first leakage current leaking through the substrate to increase reception sensitivity of the leakage current; a first current detection module detecting the first leakage current; a current measurement module receiving the first leakage current output from the first current detection module, and extracting the received first leakage current for each predetermined period to generate a first leakage current measurement information; and a control module comparing the first leakage current measurement information with a reference value to generate first arcing occurrence information.