According to one embodiment, a plasma source includes a container being configured to store a gas, a cathode member, and an anode member. The cathode member is provided in the container. The cathode member includes a plurality of first cathode layers. Each the cathode layers are arranged along a plurality of sides of a polygon. Each of the first cathode layers includes a first surface facing inside the polygon. The first surface is planar. The anode member is provided in the container.

A method for generating atmospheric pressure cold plasma inside a hand-held unit discharges cold plasma with simultaneously different rf wavelengths and their harmonies. The unit includes an rf tuning network that is powered by a low-voltage power supply connected to a series of high-voltage coils and capacitors. The rf energy signal is transferred to a primary containment chamber and dispersed through an electrode plate network of various sizes and thicknesses to create multiple frequencies. Helium gas is introduced into the first primary containment chamber, where electron separation is initiated. The energized gas flows into a secondary magnetic compression chamber, where a balanced frequency network grid with capacitance creates the final electron separation, which is inverted magnetically and exits through an orifice with a nozzle. The cold plasma thus generated has been shown to be capable of accelerating a healing process in flesh wounds on animal laboratory specimens.

Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A control loop can be activated throughout various processing steps to maintain the surface floating potential of the stage to the reference ground potential. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A conductive plate in a same region of the positive column opposite the stage is used to measure the surface floating potential of the stage. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

The current disclosure relates to a suppressor circuit configuration for extending the stable region of operation of a DC driven micro plasma discharge at atmospheric and higher pressures.

A glow discharge cell includes an electrically conductive cylindrical vessel, a hollow electrode, a cylindrical screen, a first insulator, a second insulator and a non-conductive granular material. The hollow electrode is aligned with a longitudinal axis of the cylindrical vessel and extends at least from the first end to the second end of the cylindrical vessel. The hollow electrode has an inlet, an outlet, and a plurality of slots or holes. The cylindrical screen is aligned with the longitudinal axis of the cylindrical vessel and disposed between the hollow electrode and the cylindrical vessel to form a substantially equidistant gap between the cylindrical screen and the hollow electrode. The first insulator seals the first end of the cylindrical vessel around the hollow electrode. The second insulator seals the second end of the cylindrical vessel around the hollow electrode. The non-conductive granular material is disposed within the substantially equidistant gap.

Embodiments of the invention relate to a method and apparatus for providing high thrust density plasma, and/or high control authority plasma. In specific embodiments, such high thrust density, and/or high control authority, plasma can be at or near atmospheric pressure. Embodiments pertain to a method and apparatus that use electron confinement via one or more magnetic fields, and/or one or more electric fields, in a manner to improve the ionization due to surface plasma actuators. Specific embodiments can improve ionization by several orders of magnitude. This improved ionization can result in a high electric field inside the sheath for the same applied voltage and can result in very high thrust.

A method for generating atmospheric pressure cold plasma inside a hand-held unit discharges cold plasma with simultaneously different rf wavelengths and their harmonies. The unit includes an rf tuning network that is powered by a low-voltage power supply connected to a series of high-voltage coils and capacitors. The rf energy signal is transferred to a primary containment chamber and dispersed through an electrode plate network of various sizes and thicknesses to create multiple frequencies. Helium gas is introduced into the first primary containment chamber, where electron separation is initiated. The energized gas flows into a secondary magnetic compression chamber, where a balanced frequency network grid with capacitance creates the final electron separation, which is inverted magnetically and exits through an orifice with a nozzle. The cold plasma thus generated has been shown to be capable of accelerating a healing process in flesh wounds on animal laboratory specimens.

A system for treating a substrate comprising a treatment module and a substrate plane. The substrate extending along a substrate plane to treat the substrate and wherein a fluid is deliverable via the module to a local region between the module and the substrate plane to treat the substrate with a predetermined treatment.

Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A control loop can be activated throughout various processing steps to maintain the surface floating potential of the stage to the reference ground potential. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.