A device and a method for fabricating a ceramic reinforced composite coating based on plasma remelting and injection. The device includes a plasma cladding assembly, a powder feeding assembly, a metal-based substrate, and a thermal infrared imager. The plasma cladding assembly comprises a plasma gun and a plasma generator. A plasma arc generated is used to heat the substrate and form a molten pool on the substrate. The powder feeding assembly comprises a powder feeder configured to feed ceramic particles to the molten pool through a powder feeding copper tube. The thermal infrared imager is configured to acquire an infrared image of the molten pool and acquire an optimal injection position of the ceramic particles according to the infrared image. The optimal injection position is a midpoint between a trailing edge of the plasma arc emitted on the substrate and a trailing edge of the molten pool.

The invention relates to a plasma chemical vapor deposition (PCVD) apparatus for deposition of one or more layers of silica onto an interior wall of an elongated hollow glass substrate tube. The apparatus comprises a microwave generator, a plasma generator receiving microwaves from said generator in use, a cylindrical cavity extending through said generator, and a cylindrical liner positioned in the cavity. The substrate tube passes through the liner in use. The cylindrical liner has at least one section having a reduced inner diameter over a part of the length of the liner, the at least one section providing a contact zone for the substrate tube. The microwave generator is configured to generate microwaves having a wavelength Lw in the range of 40 to 400 millimeters, wherein a length of said at least one section having the reduced inner diameter is at most 0.1×Lw.

A stress-free transparent silicon oxide coated polymer substrates and a method for depositing a stress-free transparent silicon oxide based layer on polymer substrates using a PECVD device including at least one hollow cathode plasma source.

A dielectric barrier plasma generator includes: a dielectric substrate, a high-voltage electrode provided on a first surface of the dielectric substrate, a low-voltage electrode provided to face a second surface of the dielectric substrate, a power introduction section provided at a first end of the high-voltage electrode, a gas channel formed from a first end to a second end thereof between the dielectric substrate and the low-voltage electrode to allow gas to flow from the first end of the gas channel to the second end thereof, and a blowout outlet formed at the second end of the gas channel to blow out the gas that has flown through the gas channel and plasma that has been generated in the gas channel. The dielectric substrate includes a portion having a thickness being thinner when being closer to the blowout outlet.

Provided is a mist generator including: a container that stores a liquid; a gas supply unit that supplies a gas into the container; and an electrode that generates plasma of the gas between the electrode and the liquid, where the supply direction of the gas fed from the gas supply opening of the gas supply unit is different from a direction in which gravity acts.

A deposition system includes comprising an induction crucible apparatus configured to produce a material vapour. When in use, the induction crucible apparatus is configured to inductively heat a crucible to generate two or more thermal zones in the crucible. The deposition system further includes a substrate support configured to support a substrate and a plasma source configured to generate a plasma between the induction crucible apparatus and the substrate support such that transmission of the material vapour at least partly through the plasma generates a deposition material for deposition on the substrate.

An in-chamber plasma source in a deposition reactor system includes an array of microcavity or microchannel plasma devices having a first electrode and a second electrode isolated from plasma in microcavities or microchannels. An inlet provides connection to deposition precursor. A region interacts deposition precursor with plasma. An outlet directs precursor dissociated with the plasma onto a substrate for deposition. A reactor system includes a substrate holder across from the outlet, a chamber enclosing the in-chamber plasma source and the substrate holder, an exhaust from the chamber, and conduit supplying precursors from sources or bubblers to the inlet. A reactor system can conduct plasma enhanced atomic layer deposition at high pressures and is capable of forming a complete layer in a single cycle.

Systems and methods for generating plasma to stimulate plant growth comprise a high voltage generation circuit comprising a mains power input, a high power mosfet and insulated-gate bipolar transistor, and a trigger circuit; and a plasma emitter plant applicator comprising an applicator body, a plasma applicator shield, and two plasma activator electrodes configured to generate an electric field therebetween.

A point etching module using an annular surface-discharge plasma apparatus is disclosed. The point etching module using an annular surface-discharge plasma apparatus comprises: a plate-shaped dielectric; a circular electrode disposed on and in contact with the upper surface of the dielectric; an annular electrode disposed on and in contact with the lower surface of the dielectric and providing a gas receiving space for receiving gas; and a power supplier for applying high voltage between the circular electrode and the annular electrode, wherein when the application of the high voltage starts an electric discharge, filament type plasma is irradiated toward a substrate to be treated, by using plasma flowing in the center direction of the annular electrode from between the inner surface of the annular electrode and the lower surface of the dielectric.

A point etching module using an annular surface-discharge plasma apparatus is disclosed. The point etching module using an annular surface-discharge plasma apparatus comprises: a plate-shaped dielectric; a circular electrode disposed on and in contact with the upper surface of the dielectric; an annular electrode disposed on and in contact with the lower surface of the dielectric and providing a gas receiving space for receiving gas; and a power supplier for applying high voltage between the circular electrode and the annular electrode, wherein when the application of the high voltage starts an electric discharge, filament type plasma is irradiated toward a substrate to be treated, by using plasma flowing in the center direction of the annular electrode from between the inner surface of the annular electrode and the lower surface of the dielectric.