Patent classifications
H05K2201/017
RF integrated power condition capacitor
The present invention includes a method of fabricating an integrated RF power condition capacitor with a capacitance greater than or equal to 1 of and less than 1 mm.sup.2, and a device made by the method.
PCB board, manufacturing method of PCB board and electrical device
The present disclosure provides a PCB board, a manufacturing method of a PCB board, and an electrical device, where the PCB board includes an insulating dielectric layer which is a glass substrate layer including a top surface and a bottom surface disposed oppositely; a conductive wiring layer which is disposed on a top surface of the insulating dielectric layer; and a top ink layer which is coated on the conductive wiring layer. According to the technical solution provided by the embodiment of the disclosure, the PCB board does not generate the phenomenon of deformation warping, and the conductive wiring layer is not easily peeled off from the insulating medium layer, and the use performance of the PCB board is good.
Circuit board and display device
A circuit board and a display device are disclosed. The circuit board includes an insulating layer and a metal foil layer. The metal foil layer is disposed on a surface of the insulating layer. The insulating layer comprises the graphene. The insulating layer comprises a glass felt semicured layer and a glass cloth semicured layer. The glass felt semicured layer and the glass cloth semicured layer are stacked. The glass felt semicured layer includes a glass felt layer and a high thermal conductive adhesive layer covering a surface of the glass felt layer. The glass cloth semicured layer comprises a glass cloth layer and the high thermal conductive adhesive layer covering a surface of the glass cloth layer. The high thermal conductive adhesive layer comprises the graphene, and the glass felt semicured layer and the glass cloth semicured layer also comprise the graphene.
LAMINATED GLASS STRUCTURES FOR ELECTRONIC DEVICES AND ELECTRONIC DEVICE SUBSTRATES
A laminated glass structure for an electronic device includes: a core glass layer having a first coefficient of thermal expansion (CTE); and a plurality of clad glass layers, each having a CTE that is lower than or equal to the first CTE of the core glass layer. A first of the clad glass layers is laminated to a first surface of the core glass layer and a second of the clad layers is laminated to a second surface of the core glass layer. Further, the total thickness of the core glass layer and the clad glass layers ranges from about 0.1 mm to about 3 mm. In addition, each of the first of the clad layers and the core glass layer comprises a loss tangent of 0.006 or less for signals having a frequency of 1 GHz to about 100 GHz.
Flame retardant structure for component carrier
A method of manufacturing a constituent for a component carrier is disclosed. The method includes providing an electrically conductive structure, forming a highly thermally conductive and electrically insulating or semiconductive structure on the electrically conductive structure, and subsequently, attaching a thermally conductive and electrically insulating structure, having a lower thermal conductivity than the highly thermally conductive and electrically insulating or semiconductive structure, on an exposed surface of the highly thermally conductive and electrically insulating or semiconductive structure.
PCB BOARD, MANUFACTURING METHOD OF PCB BOARD AND ELECTRICAL DEVICE
The present disclosure provides a PCB board, a manufacturing method of a PCB board, and an electrical device, where the PCB board includes an insulating dielectric layer which is a glass substrate layer including a top surface and a bottom surface disposed oppositely; a conductive wiring layer which is disposed on a top surface of the insulating dielectric layer; and a top ink layer which is coated on the conductive wiring layer. According to the technical solution provided by the embodiment of the disclosure, the PCB board does not generate the phenomenon of deformation warping, and the conductive wiring layer is not easily peeled off from the insulating medium layer, and the use performance of the PCB board is good.
RF INTEGRATED POWER CONDITION CAPACITOR
The present invention includes a method of fabricating an integrated RF power condition capacitor with a capacitance greater than or equal to 1 of and less than 1 mm.sup.2, and a device made by the method.
Substrate
A substrate is disclosed. In an embodiment, a substrate includes a ceramic main body, an organic surface structure on at least one first outer face of the ceramic main body and outer redistribution layers integrated into the organic surface structure.
CIRCUIT BOARD AND DISPLAY DEVICE
A circuit board and a display device are disclosed. The circuit board includes an insulating layer and a metal foil layer. The metal foil layer is disposed on a surface of the insulating layer. The insulating layer comprises the graphene. The insulating layer comprises a glass felt semicured layer and a glass cloth semicured layer. The glass felt semicured layer and the glass cloth semicured layer are stacked. The glass felt semicured layer includes a glass felt layer and a high thermal conductive adhesive layer covering a surface of the glass felt layer. The glass cloth semicured layer comprises a glass cloth layer and the high thermal conductive adhesive layer covering a surface of the glass cloth layer. The high thermal conductive adhesive layer comprises the graphene, and the glass felt semicured layer and the glass cloth semicured layer also comprise the graphene.
MODULATED INDUCTANCE MODULE
A modulated inductance module includes an inductor including one or more electrical conductors disposed around a ferromagnetic ceramic element formed on a semiconductor die, wherein the inductor further has two or more metal oxides having fluctuations in metal-oxide compositional uniformity less than or equal to 1.50 mol % throughout said ceramic element, the ceramic element has crystalline grain structure having a diameter that is less than or equal to 1.5 a mean grain diameter, and the semiconductor die contains active semiconductor switches or rectifying components that are in electrical communication with the one or more electrical conductors of the inductor.